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Infineon Technologies FM25L16B-DG

Part No.:
FM25L16B-DG
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
8-WDFN Exposed Pad
Datasheet:
AetrixFM25L16B-DG.pdf
Description:
IC FRAM 16KBIT SPI 20MHZ 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,246

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Product details

Overview

FM25L16B-DG from Infineon Technologies (formerly Cypress) is a 16-Kbit serial SPI F-RAM organized as 2K × 8, functioning as a nonvolatile memory replacement for EEPROM and serial flash in real-time data logging systems. It delivers NoDelay™ writes at up to 20 MHz SPI clock rate, supports industrial temperature (–40 °C to +85 °C), operates from 2.7 V to 3.6 V, and guarantees 1014 read/write cycles with 151-year data retention.

For engineers reviewing the FM25L16B-DG datasheet, FM25L16B-DG pinout, FM25L16B-DG application, or FM25L16B-DG equivalent, key selection criteria include write endurance, zero-write-latency operation, SPI mode 0/3 compatibility, hardware/software write protection, and SOIC-8/DFN-8 package options for space-constrained industrial controllers and metering devices.

Technical Context

The FM25L16B-DG implements ferroelectric memory technology to eliminate write latency-data commits immediately upon byte transfer without polling or erase cycles. Its internal architecture includes a 2K × 8 F-RAM array, 3-bit nonvolatile status register, and dedicated instruction decoder supporting WREN, WRDI, RDSR, WRSR, READ, and WRITE opcodes.

It operates as an SPI slave in Mode 0 (CPOL = 0, CPHA = 0) and Mode 3 (CPOL = 1, CPHA = 1), with inputs latched on SCK rising edge and outputs driven on falling edge. The HOLD pin enables transaction suspension without clock or CS interference, and the WP pin provides hardware-level status register write lock when WPEN = 1.

Key Specifications

ParameterValue and Actual Design Meaning
Memory size16 Kbit (2,048 × 8 bytes); directly addressable via 11-bit address field in SPI command stream
SPI speedUp to 20 MHz; enables sub-μs per-byte write commit time without wait states
Write endurance1014 cycles; supports >27,000 writes/sec continuously for 10+ years in data logger applications
Data retention151 years at +85 °C; eliminates periodic refresh or backup power requirements
Supply voltage2.7 V to 3.6 V; compatible with 3.3 V industrial logic rails without level shifting
Operating temp–40 °C to +85 °C; qualified for deployment in outdoor utility meters and factory automation nodes
Active current200 μA at 1 MHz; reduces average power in battery-backed sensor nodes
Standby current3 μA (typ); enables multi-year operation on coin-cell batteries during sleep intervals

Pinout & Package

FM25L16B-DG is available in an 8-pin SOIC package (3.9 mm × 4.9 mm) with standard gull-wing leads and RoHS-compliant matte tin finish. Pin functions are electrically identical across SOIC and DFN variants; DFN variant includes an unconnected exposed pad not to be soldered.

Pin/TerminalCircuit RoleDesign Meaning
CSChip Select inputActive-low enable; places device in standby (high-Z I/O, 3 μA) when HIGH; requires falling edge to initiate each opcode sequence
SCKSerial clock inputSynchronizes all SPI transfers; inputs sampled on rising edge, outputs driven on falling edge; supports 0–20 MHz with arbitrary pauses
SISerial data inputReceives opcode, address, and write data; must be held valid during active CS to meet IDD specs; may share net with SO in 3-wire mode
SOSerial data outputDrives read data and status bits; high-impedance when CS HIGH or HOLD LOW; timing aligned to SCK falling edge
WPWrite protect inputHardware lock for status register writes when WPEN = 1; must be tied to VDD if unused to prevent accidental protection activation
HOLDTransaction suspend inputPauses ongoing read/write without clock or CS disruption; transitions only allowed while SCK = LOW; tied to VDD if unused
VSSGround referencePrimary return path for all internal circuitry; requires low-impedance connection to system ground plane
VDDPower supplySingle 2.7–3.6 V rail powers logic and memory array; no internal regulation-external supply must remain within tolerance during all operations

Key Features

FeatureDesign Value
NoDelay™ write architectureEliminates write latency and polling loops-byte commits instantly after SI shift-in completes, enabling deterministic real-time logging
Ferroelectric memory processEnables 1014 endurance and 151-year retention without wear leveling, refresh circuits, or backup capacitors
Dual SPI mode supportInteroperates with legacy and modern microcontrollers using either Mode 0 (CPOL=0, CPHA=0) or Mode 3 (CPOL=1, CPHA=1)
Multi-layer write protectionCombines hardware (WP pin), software disable (WRDI), and block-level (1/4, 1/2, full array) software control via status register
Low-voltage 3.3 V operationDirect interface with ARM Cortex-M, PIC, and ESP32 GPIO without level translation; reduces BOM count and layout complexity

Applications

Smart Energy MeteringIndustrial PLC Data Logging

Use Scenario: Storing tariff schedules, consumption timestamps, and tamper-event records in DIN-rail electricity meters operating unattended for 15+ years.

IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory holding time-critical billing data between MCU wake cycles; accessed via SPI at 10 MHz during 100-ms interrupt windows.

Use Value: 1014 write cycles ensure >40 years of daily 10,000-event logging without degradation; zero-latency writes prevent data loss during brownout events.

Use Scenario: Capturing sensor readings (temperature, pressure, vibration) from 16-channel analog inputs in factory-floor programmable logic controllers.

IC Role / Device Role / Timing Role: High-speed ring buffer storing last 2K samples prior to Ethernet upload; written continuously at 1 kHz burst rate with no firmware overhead.

Use Value: 20 MHz SPI + NoDelay™ enables full 2K overwrite in <1.1 ms-faster than flash erase time by 3 orders of magnitude, eliminating sampling gaps.

Medical Diagnostic Device StorageAutomotive Telematics Event Buffer

Use Scenario: Recording ECG waveform snippets and diagnostic flags in portable patient monitors requiring FDA-grade data integrity and battery life >72 hours.

IC Role / Device Role / Timing Role: Power-fail-safe storage for last 30 seconds of waveform pre-trigger; retains data through cold start and battery swaps.

Use Value: 151-year retention at +85 °C ensures waveform history survives sterilization cycles and long shelf life; 3 μA standby extends battery runtime by 22% vs EEPROM.

Use Scenario: Capturing crash-triggered CAN bus snapshots and GPS coordinates in vehicle black boxes deployed in under-hood environments.

IC Role / Device Role / Timing Role: Shock-tolerant nonvolatile buffer writing critical event data within 50 μs of airbag deployment signal assertion.

Use Value: Sub-microsecond write commit time meets ISO 26262 ASIL-B timing constraints; –40 °C to +85 °C rating ensures reliability inside engine compartments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MB85RS1616 Kbit FRAM, 40 MHz SPI, 1.8–3.6 V supply, 1013 endurance, 10-year retention at +85 °CHigher speed and wider voltage range but lower retention; requires tighter VDD regulationSelect for battery-powered IoT sensors needing 40 MHz throughput and 1.8 V compatibility
AT25SF0414 Mbit serial NOR flash, 104 MHz QSPI, 2.7–3.6 V, 100k program/erase cycles, requires sector erase before writeHigher density but 100× slower writes, erase dependency, and no true byte-write capabilitySelect only when >100 KB storage is required and write frequency is <100x/day

Compared with MB85RS16 and AT25SF041, FM25L16B-DG uniquely balances ultra-high endurance, zero-write-latency, and industrial temperature reliability in a 16 Kbit footprint-making it optimal for applications where write frequency, determinism, and long-term data integrity outweigh raw density or peak bandwidth needs.

Availability

FM25L16B-DG is available at Aetrix Electronics and suitable for smart metering, industrial PLC data logging, medical diagnostic storage, and automotive telematics requiring stable component supply over extended product lifecycles.

Supply support for FM25L16B-DG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power management, sensing, connectivity, and security solutions for industrial, automotive, and IoT markets.

The FM25L16B-DG belongs to Infineon's F-RAM portfolio-designed specifically for mission-critical nonvolatile data capture where write endurance, speed, and reliability surpass conventional flash and EEPROM in harsh or high-frequency update environments.

FAQ

Is FM25L16B-DG pin-compatible with standard SPI EEPROMs like AT25XXX series?

Yes-FM25L16B-DG uses identical 8-pin SOIC/DFN footprints and matches the SPI command set (READ, WRITE, WREN, RDSR) of AT25080A/AT25160B, including same opcode values and address format. Hardware replacement requires no PCB change, though WP and HOLD pins offer enhanced functionality not present in basic EEPROMs.

Does FM25L16B-DG require external high-voltage programming pulses or erase cycles?

No-FM25L16B-DG performs true random-access byte writes at bus speed with no erase prerequisite, no high-voltage pump, and no timeout delays. Each write completes within one SPI byte transfer window (e.g., ~400 ns at 20 MHz), eliminating firmware wait loops and wear-leveling logic.

How does the HOLD pin behave during an active write operation?

When HOLD is pulled LOW during a write, the FM25L16B-DG immediately suspends the ongoing byte transfer-latching the current address and data state-and enters a quiescent hold mode. SCK and CS are ignored until HOLD returns HIGH, at which point the suspended operation resumes from the exact bit position without data corruption or retransmission.

Can FM25L16B-DG be used in 3-wire SPI configurations?

Yes-the SI and SO pins can be wired together (with appropriate series resistor or tri-state control) to implement a single-data-line SPI interface. The device supports this mode per datasheet Note 1; WP and HOLD must be tied to VDD, and software must manage direction control to avoid bus contention during readback.

FM25L16B-DG Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
F-RAM™
Package/Case:
8-WDFN Exposed Pad
Packaging:
Tube
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Non-Volatile
Memory Format:
FRAM
Technology:
FRAM (Ferroelectric RAM)
Memory Size:
16Kbit
Memory Organization:
2K x 8
Memory Interface:
SPI
Clock Frequency:
20 MHz
Write Cycle Time - Word, Page:
-
Access Time:
-
Voltage - Supply:
2.7V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (4x4.5)

FM25L16B-DG FAQ

1.How can I place an order for FM25L16B-DG through Aetrix?

Please submit a Request for Quotation (RFQ) for FM25L16B-DG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FM25L16B-DG reliable?

The price and inventory of FM25L16B-DG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FM25L16B-DG is usually 5 days.

3.What payment methods are accepted for FM25L16B-DG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FM25L16B-DG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FM25L16B-DG?

FM25L16B-DG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FM25L16B-DG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FM25L16B-DG?

For technical support, including FM25L16B-DG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FM25L16B-DG requirements.

6.How does Aetrix verify that FM25L16B-DG is sourced from the original manufacturer or authorized distributors?

All FM25L16B-DG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FM25L16B-DG meets industry standards.

7.What is the process for return or replacement of FM25L16B-DG?

All FM25L16B-DG units undergo pre-shipment inspection (PSI). If there is an issue with FM25L16B-DG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FM25L16B-DG part is unused and in its original packaging.

Return procedure for FM25L16B-DG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

FM25L16B-DG Tags

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