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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies FM25L16B-GTR

Name: FM25L16B-GTR
Brand: Infineon Technologies
SKU: FM25L16B-GTR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FM25L16B-GTR

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: FM25L16B-GTR.pdf

Description:: IC FRAM 16KBIT SPI 20MHZ 8SOIC

Quantity:: RFQ Add To RFQ list

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Inventory:7,794

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Product details

Overview

FM25L16B-GTR from Infineon Technologies (formerly Cypress) is a 16-Kbit serial SPI F-RAM organized as 2K × 8, delivering NoDelay™ writes with zero write latency, 10¹⁴ read/write endurance, and 151-year data retention at industrial temperature (–40 °C to +85 °C). It operates on 2.7–3.6 V, supports up to 20 MHz SPI clock, and serves as a hardware drop-in replacement for serial EEPROM and flash in real-time data logging systems.

For engineers reviewing the FM25L16B-GTR datasheet, FM25L16B-GTR pinout, FM25L16B-GTR application, or FM25L16B-GTR equivalent, key selection criteria include guaranteed bus-speed writes without polling, industrial-grade reliability under frequent write cycles, SPI mode 0/3 compatibility, and dual-package availability (SOIC-8 and DFN-8) with hardware/software write protection.

Technical Context

The FM25L16B-GTR implements ferroelectric memory technology to eliminate write latency inherent in charge-based nonvolatile memories. Its internal architecture includes a 2K × 8 F-RAM array, a 3-bit nonvolatile status register, and dedicated logic for opcode decoding, address counting, and SPI timing control - all synchronized to the external SCK without internal wait states.

It functions strictly as an SPI slave device with no internal power management beyond POR, requiring host-controlled VDD stability. Write enable latching (WREN/WRDI), status register access (RDSR/WRSR), and block-level software protection (1/4, 1/2, or full array) are managed via standardized SPI opcodes, while hardware write protection is enforced by the active-low WP pin when WPEN = 1.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory size	16 Kbit (2,048 × 8 bytes); enables compact firmware parameter storage without page management overhead
Write endurance	10¹⁴ cycles; supports >27,000 writes/sec continuously for 10+ years in high-frequency telemetry nodes
Data retention	151 years at +85 °C; eliminates periodic refresh or backup power requirements in sealed industrial sensors
SPI speed	Up to 20 MHz; achieves 2.5 MB/s effective write throughput with no inter-byte delay
Supply voltage	2.7 V to 3.6 V; compatible with single-supply 3.3 V microcontroller I/O domains without level shifting
Operating temperature	–40 °C to +85 °C; qualified for deployment in motor drives, PLC backplanes, and outdoor metering enclosures
Active current	200 µA at 1 MHz; reduces average power in battery-backed event loggers during burst-write intervals

Pinout & Package

FM25L16B-GTR is available in two RoHS-compliant packages: 8-pin SOIC (width 3.9 mm) and 8-pin DFN (3 × 3 mm, exposed pad unconnected). Both share identical pin functionality and signal mapping.

Pin/Terminal	Circuit Role	Design Meaning
CS	Chip Select input	Active-low enable; places device in standby (3 µA) when HIGH; requires falling edge before each opcode
SCK	Serial clock input	Synchronizes all I/O; rising edge latches SI, falling edge drives SO; supports 0–20 MHz with arbitrary pauses
SI	Serial input	Receives opcodes, addresses, and write data; must be driven to valid logic level to meet IDD specs
SO	Serial output	Drives read data and status bits; tristated during writes, HOLD, or CS HIGH
WP	Write protect input	Hardware lock for status register when WPEN = 1; must tie to VDD if unused
HOLD	Operation suspend input	Pauses ongoing read/write without losing state; transitions only allowed while SCK = LOW
VSS	Ground	Reference return path for all signals and power; must connect to system ground plane
VDD	Power supply	2.7–3.6 V core supply; no internal regulation - requires stable external rail per datasheet tolerances

Key Features

Feature	Design Value
NoDelay™ write architecture	Eliminates polling and timeout loops in firmware; byte-level writes complete before next SPI clock cycle begins
Ferroelectric memory cell	Enables 100 trillion write cycles without wear leveling or block erasure - unlike flash or EEPROM
Dual SPI mode support	Interoperates with legacy and modern MCUs using either Mode 0 (CPOL=0, CPHA=0) or Mode 3 (CPOL=1, CPHA=1)
Multi-layer write protection	Combines hardware (WP pin), instruction-based (WREN/WRDI), and configurable block locking (via status register)
Low-voltage operation	Functions across full 2.7–3.6 V range with monotonic timing - avoids brown-out resets during battery discharge

Applications

Industrial Data Logger

Smart Energy Meter

Use Scenario: Continuous timestamped sensor sampling (e.g., temperature, vibration) at 100 Hz with power-loss resilience.

IC Role / Device Role / Timing Role: Nonvolatile scratchpad storing last-known state and buffered samples prior to safe shutdown.

Use Value: Guarantees no data loss during unexpected mains dropout due to zero-latency writes and 151-year retention.

Use Scenario: Storing tariff tables, billing registers, and tamper-event logs in ANSI C12.22-compliant meters.

IC Role / Device Role / Timing Role: Secure, high-endurance configuration memory interfaced directly to metrology SoC's SPI port.

Use Value: Survives >10¹⁴ write cycles from daily kWh accumulation - exceeding 30-year field life without degradation.

PLC I/O Module

Medical Diagnostic Sensor Hub

Use Scenario: Capturing actuator calibration offsets and fault history in DIN-rail mounted controllers with 50 ms watchdog windows.

IC Role / Device Role / Timing Role: Fast-access configuration store updated during commissioning and maintenance cycles.

Use Value: Completes 256-byte calibration write in <130 µs at 20 MHz - fits within tight deterministic scan cycles.

Use Scenario: Recording ECG waveform metadata, patient ID, and self-test results in portable diagnostic devices with coin-cell backup.

IC Role / Device Role / Timing Role: Low-power nonvolatile buffer co-located with analog front-end ASIC.

Use Value: Draws only 200 µA active current at 1 MHz and retains data for 151 years without capacitor hold-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MB85RS16	16 Kbit FRAM, 40 MHz max SPI, 1.8–3.6 V supply, 10¹³ endurance, 10-year retention at +85 °C	Higher speed and lower voltage support, but reduced data retention and endurance vs. FM25L16B-GTR	Preferred where MCU runs at 1.8 V or requires >20 MHz interface; less suitable for long-life sealed deployments
AT25DF041A	4 Mbit serial NOR flash, 80 MHz DTR, 2.7–3.6 V, requires 25 ms sector erase before write, 100k endurance	Higher density and faster read speed, but suffers erase latency, wear leveling complexity, and low write-cycle lifetime	Only viable when write frequency is <100×/day and firmware can manage erase scheduling and bad-block mapping

Compared with MB85RS16 and AT25DF041A, FM25L16B-GTR uniquely balances industrial temperature reliability, ultra-high endurance, and true zero-latency writes - making it optimal for systems where write timing determinism and multi-decade data integrity are non-negotiable.

Availability

FM25L16B-GTR is available at Aetrix Electronics and suitable for industrial data loggers, smart energy meters, PLC I/O modules, and medical diagnostic sensor hubs requiring stable component supply across extended product lifecycles.

Supply support for FM25L16B-GTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for industrial, automotive, and IoT applications.

The FM25L16B-GTR belongs to Infineon's F-RAM portfolio - engineered specifically for mission-critical nonvolatile storage where rapid, reliable, and low-power writes supersede raw density or read speed.

FAQ

Is FM25L16B-GTR pin-compatible with standard SPI EEPROMs like AT25XXX series?

Yes - FM25L16B-GTR uses identical 8-pin SOIC and DFN footprints and supports the same SPI command set (READ, WRITE, WREN, RDSR, etc.) as common serial EEPROMs. Its CS/SCK/SI/SO/WP/HOLD/VDD/VSS pin mapping matches industry-standard layouts, enabling direct PCB replacement without layout changes.

Does FM25L16B-GTR require external circuitry for write protection?

No - it integrates three independent write protection layers: hardware (WP pin), instruction-based (WREN/WRDI), and software-configurable block locking (via status register bits BP0/BP1). The WP pin alone provides immediate, unconditional lock of the status register when WPEN = 1, eliminating need for external logic.

Can FM25L16B-GTR operate reliably at 1.8 V?

No - FM25L16B-GTR is specified only for 2.7–3.6 V operation. Attempting 1.8 V supply violates absolute maximum ratings and causes undefined behavior, including failed writes and corrupted status register reads. For 1.8 V systems, consider Infineon's MB85RS16 or Cypress' FM25V05.

What happens during a power interruption mid-write?

Because FM25L16B-GTR performs NoDelay™ writes with no internal erase or programming phases, any byte successfully shifted into the device before VDD collapse is immediately and atomically stored. There is no partial-write or corruption risk - unlike flash or EEPROM, which may leave sectors in invalid states after brown-out.

FM25L16B-GTR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: F-RAM™

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FRAM

Technology:: FRAM (Ferroelectric RAM)

Memory Size:: 16Kbit

Memory Organization:: 2K x 8

Memory Interface:: SPI

Clock Frequency:: 20 MHz

Write Cycle Time - Word, Page:: -

Access Time:: -

Voltage - Supply:: 2.7V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

FM25L16B-GTR FAQ

1.How can I place an order for FM25L16B-GTR through Aetrix?

Please submit a Request for Quotation (RFQ) for FM25L16B-GTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FM25L16B-GTR reliable?

The price and inventory of FM25L16B-GTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FM25L16B-GTR is usually 5 days.

3.What payment methods are accepted for FM25L16B-GTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FM25L16B-GTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FM25L16B-GTR?

FM25L16B-GTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FM25L16B-GTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FM25L16B-GTR?

For technical support, including FM25L16B-GTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FM25L16B-GTR requirements.

6.How does Aetrix verify that FM25L16B-GTR is sourced from the original manufacturer or authorized distributors?

All FM25L16B-GTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FM25L16B-GTR meets industry standards.

7.What is the process for return or replacement of FM25L16B-GTR?

All FM25L16B-GTR units undergo pre-shipment inspection (PSI). If there is an issue with FM25L16B-GTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FM25L16B-GTR part is unused and in its original packaging.

Return procedure for FM25L16B-GTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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