Infineon Technologies FM25V02A-DG

Overview

FM25V02A-DG from Infineon Technologies (formerly Cypress) is a 256-Kbit serial SPI F-RAM organized as 32K × 8, delivering true nonvolatile RAM-like operation with NoDelay™ writes, 10¹⁴ read/write endurance, and 151-year data retention. It operates from 2.0 V to 3.6 V across –40 °C to +85 °C and serves as a hardware drop-in replacement for serial EEPROM or flash in real-time data logging systems.

For engineers reviewing the FM25V02A-DG datasheet, FM25V02A-DG pinout, FM25V02A-DG application, or FM25V02A-DG equivalent, key selection criteria include SPI mode 0/3 compatibility, write-protection granularity (1/4, 1/2, full array), 40-MHz max clock frequency, low-power sleep mode (8 µA), and industrial-grade temperature support - all critical for deterministic embedded storage.

Technical Context

The FM25V02A-DG implements a ferroelectric memory array with zero-write-latency architecture: each byte is committed immediately upon successful SPI transfer without polling or internal write cycles. Its control logic integrates an on-die instruction decoder, address counter, and nonvolatile status register managing WPEN, BP0/BP1 bits.

SPI interface compliance includes dual-mode support (Mode 0: CPOL=0, CPHA=0; Mode 3: CPOL=1, CPHA=1), synchronous I/O timing referenced to SCK rising/falling edges, and hardware/software write protection coexistence - enabling robust field-updatable systems where flash wear-out or EEPROM latency is unacceptable.

Key Specifications

Pinout & Package

FM25V02A-DG is supplied in an 8-pin SOIC package (3.9 mm × 4.9 mm, 1.27 mm pitch) with gull-wing leads and standard JEDEC MS-012AC footprint. Pin functions are electrically validated per Cypress Document 001-90865 Rev. *I.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Compared with MB85RS2MT-FPNSE1 and AT25DF041A-SHN-T, FM25V02A-DG uniquely delivers deterministic sub-microsecond writes, 100-trillion-cycle endurance, and integrated HOLD functionality - making it the only viable choice for real-time, high-frequency, power-interruption-resilient data capture.

Availability

FM25V02A-DG is available at Aetrix Electronics and suitable for industrial data loggers, smart energy meters, automotive body control modules, and medical diagnostic equipment requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for FM25V02A-DG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, sensors, and memory solutions for industrial, automotive, and IoT applications.

The FM25V02A-DG belongs to Infineon's F-RAM portfolio, engineered specifically to replace serial EEPROM and flash in applications demanding unlimited write cycles, zero write latency, and extended data retention without complex firmware overhead.

FAQ

Is FM25V02A-DG pin-compatible with standard SPI EEPROMs like AT25XXX series?

Yes - FM25V02A-DG uses identical 8-pin SOIC pinout and SPI command set (WREN, WRDI, RDSR, WRSR, READ, WRITE) as industry-standard serial EEPROMs. No PCB redesign is needed; only firmware update is required to remove polling loops due to its NoDelay™ write capability.

Does FM25V02A-DG require external high-voltage programming circuitry?

No - FM25V02A-DG performs all write operations at standard VDD (2.0–3.6 V) with no charge pump or high-voltage generator. This eliminates external components, reduces EMI, and simplifies layout versus EEPROM or flash, which require 12-V or boosted programming voltages.

How does the HOLD pin function during an active read operation?

When HOLD is pulled LOW during a read, the FM25V02A-DG suspends data output on SO after the current byte completes transmission, holds SCK and SI states, and enters a low-power hold state. The host may resume by returning HOLD HIGH while keeping SCK LOW, then restarting the clock - preserving full transaction context without restart overhead.

Can FM25V02A-DG be used in systems powered by a single-cell Li-ion battery?

Yes - with VDD operating down to 2.0 V and sleep current of only 8 µA, FM25V02A-DG remains fully functional across the full discharge curve of a single-cell Li-ion (4.2 V → 2.5 V). Its 2.0 V minimum threshold ensures reliable operation even under deep discharge or cold-temperature conditions.