Infineon Technologies FM25V02-DGTR

Overview

FM25V02-DGTR from Cypress Semiconductor is a 256-Kbit (32 K × 8) serial SPI F-RAM nonvolatile memory with NoDelay™ writes, 10¹⁴ read/write endurance, and 151-year data retention. It operates at 2.0–3.6 V over –40 °C to +85 °C and supports 40-MHz SPI bus speeds in modes 0 and 3. Used in industrial data logging where rapid, reliable byte-level writes are critical.

For engineers reviewing the FM25V02-DGTR datasheet, FM25V02-DGTR pinout, FM25V02-DGTR application, or FM25V02-DGTR equivalent, key selection criteria include write latency (zero wait states), endurance margin vs. EEPROM/flash, SPI mode compatibility, hardware/software write protection granularity, and industrial temperature compliance.

Technical Context

The FM25V02-DGTR implements a ferroelectric memory array accessed via standard SPI protocol with no internal write cycles or polling required. Its status register enables configurable block protection (1/4, 1/2, or full array) and write-enable latch control.

It functions as an SPI slave device with dual-mode clocking (SPI mode 0 and mode 3), rising-edge input sampling and falling-edge output driving on SCK, and dedicated WP/HOLD pins for deterministic hardware-level write inhibition and operation suspension.

Key Specifications

Pinout & Package

FM25V02-DGTR is supplied in an 8-pin SOIC package (DGTR suffix denotes SOIC). Pin functions are electrically identical across SOIC and DFN variants.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Compared with MB85RS2MT-FPN-G-JNE1 and AT25DF041A-SHN-T, FM25V02-DGTR uniquely delivers zero-write-latency, 10¹⁴-cycle endurance, and hardware HOLD capability in a compact SOIC-8 footprint-making it optimal for real-time, high-write-count industrial recording.

Availability

FM25V02-DGTR is available at Aetrix Electronics and suitable for industrial data loggers, smart metering systems, PLC I/O modules, and medical diagnostic equipment requiring stable component supply across multi-year production cycles.

Supply support for FM25V02-DGTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability semiconductor solutions for industrial, automotive, and IoT applications, with expertise in nonvolatile memory and programmable systems.

The FM25V02 belongs to Cypress's F-RAM product line, engineered specifically to replace serial EEPROM and flash in applications demanding unlimited write endurance, instant writes, and long-term data retention without backup power.

FAQ

Is FM25V02-DGTR pin-compatible with standard SPI EEPROMs like AT25xxx series?

Yes-FM25V02-DGTR uses identical SOIC-8 pinout and SPI command set (WREN, WRDI, RDSR, WRSR, READ, WRITE) as industry-standard serial EEPROMs. Hardware replacement requires no PCB redesign, though firmware must disable polling loops due to zero-write-latency behavior.

Does FM25V02-DGTR require external high-voltage programming or special write sequences?

No-FM25V02-DGTR performs writes at standard VDD levels (2.0–3.6 V) with no charge pumps or high-voltage generators. A simple SPI WRITE command followed by address and data bytes commits data instantly; no pre-erase, verify, or delay cycles are needed.

How does the HOLD pin function during active SPI transfers?

When HOLD is pulled LOW during any SPI transaction (read or write), the FM25V02-DGTR suspends communication immediately: SCK and CS are ignored, SO goes high-Z, and internal state is preserved. Resuming requires returning HOLD HIGH while SCK is LOW, then continuing the original command sequence.

Can FM25V02-DGTR be used in battery-powered devices with strict sleep current budgets?

Yes-FM25V02-DGTR draws only 5 µA in sleep mode and 90 µA in standby. With proper CS deactivation between accesses and use of sleep mode during idle periods, it supports >10-year operation on a single CR2032 coin cell in applications writing ≤100 bytes per day.