Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies FM25V10-DGTR

Part No.:
FM25V10-DGTR
Manufacturer:
Infineon Technologies
Category:
Memory
Package:
8-WDFN Exposed Pad
Datasheet:
AetrixFM25V10-DGTR.pdf
Description:
IC FRAM 1MBIT SPI 40MHZ 8DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,698

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

FM25V10-DGTR from Cypress Semiconductor is a 1-Mbit (128K × 8) serial SPI ferroelectric RAM (F-RAM) with NoDelay™ write capability, 40-MHz max SPI clock, and 1014 read/write endurance. It operates from 2.0 V to 3.6 V across –40 °C to +85 °C and replaces serial EEPROM/flash in data-logging, industrial control, and metering systems where rapid nonvolatile writes are critical.

For engineers reviewing the FM25V10-DGTR datasheet, FM25V10-DGTR pinout, FM25V10-DGTR application, or FM25V10-DGTR equivalent, key selection criteria include guaranteed bus-speed writes without polling, hardware/software write protection, unique serial number support (FM25VN10 variant), industrial temperature rating, and RoHS-compliant 8-pin SOIC packaging.

Technical Context

The FM25V10-DGTR implements a synchronous SPI slave interface supporting modes 0 (CPOL = 0, CPHA = 0) and 3 (CPOL = 1, CPHA = 1), with data latched on SCK rising edge and output on falling edge. Its internal F-RAM array eliminates erase cycles and write latency inherent in flash/EEPROM.

Write operations complete within one SPI byte transfer cycle - no status polling required - enabled by ferroelectric cell architecture and integrated write-enable latch control. The device integrates a 3-bit nonvolatile status register for block protection (1/4, 1/2, or full array), WP pin hardware lock, and HOLD pin for transaction suspension.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density1 Mbit (128K × 8); supports byte-level random access without page/sector erase overhead
SPI Clock FrequencyUp to 40 MHz; enables ≤25 ns per bit transfer, matching microcontroller bus speed
Write Endurance1014 cycles; supports >27,000 writes/sec continuously for 151 years at 25 °C
Data Retention151 years at 25 °C; guaranteed over full industrial temperature range without refresh
Supply Voltage2.0 V to 3.6 V; compatible with 2.5 V and 3.3 V logic domains without level shifting
Active Current300 µA at 1 MHz; enables low-power data capture in battery-backed systems
Standby Current90 µA typical; reduces quiescent power during host idle periods

Pinout & Package

FM25V10-DGTR is supplied in an 8-pin small outline integrated circuit (SOIC) package with gull-wing leads, JEDEC MS-012AC compliant, body size 5.3 mm × 6.2 mm × 1.75 mm.

Pin/TerminalCircuit RoleDesign Meaning
CSChip Select inputActive-low enable; places device in standby and tristates SO when HIGH; initiates all commands on falling edge
SCKSerial clock inputSynchronizes all I/O; rising edge latches SI, falling edge drives SO; supports 0–40 MHz with interruptible clock
SISerial inputReceives opcodes, addresses, and write data; must be driven to valid logic level to meet IDD specs
SOSerial outputDrives read data and status bits; high-impedance when CS HIGH or HOLD LOW
WPWrite protect inputHardware lock for status register writes when WPEN = 1; must tie to VDD if unused
HOLDOperation suspend inputPauses ongoing read/write without losing state; transitions only allowed while SCK is LOW
VDDPower supply2.0–3.6 V core and I/O supply; decoupling capacitor required per datasheet layout guidelines
VSSGroundReference return path for all signals and power; must connect to system ground plane

Key Features

FeatureDesign Value
NoDelay™ WriteWrites complete in real time - next SPI byte can be shifted immediately; eliminates firmware polling loops and timeout handling
Ferroelectric Memory Core1014 endurance and 151-year retention without wear leveling or background erase management
Dual SPI Mode SupportCompatible with both Mode 0 and Mode 3 masters, enabling drop-in replacement across diverse MCU platforms
Multi-layer Write ProtectionCombines hardware (WP pin), software disable (WRDI), and configurable block lock (1/4, 1/2, full array)
Device IdentificationRead-only Manufacturer ID, Product ID, and unique serial number (FM25VN10 variant) for traceability and anti-counterfeiting

Applications

Smart Energy MeteringIndustrial PLC Data Logging

Use Scenario: Continuous timestamped energy consumption sampling at 1-second intervals with power-fail-safe storage.

IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory storing last-read values and calibration constants between MCU wake cycles.

Use Value: Eliminates risk of data loss during brownout due to zero-write-latency and 2.0 V minimum VDD operation.

Use Scenario: Capturing sensor fault events and operational logs in programmable logic controllers deployed in factory automation.

IC Role / Device Role / Timing Role: High-cycle-count event buffer that survives >100 million runtime hours without degradation.

Use Value: Replaces EEPROM with 100 million× higher endurance, avoiding field failures from write wear-out.

Medical Diagnostic Device CalibrationAutomotive Telematics Black Box

Use Scenario: Storing factory-calibrated sensor offsets and user-adjusted thresholds in portable ultrasound and ECG units.

IC Role / Device Role / Timing Role: Secure, tamper-resistant configuration store accessed during boot and service mode.

Use Value: Hardware WP pin prevents accidental overwrite during field servicing; serial number enables audit trail.

Use Scenario: Recording vehicle crash-triggered CAN bus snapshots and GPS coordinates in ADAS black box recorders.

IC Role / Device Role / Timing Role: Burst-write buffer capturing pre- and post-event telemetry within <100 µs of trigger.

Use Value: 40-MHz SPI and NoDelay™ write ensure full 128K-byte buffer fills before airbag deployment completes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MB85RS1MT-FPNSE11-Mbit FRAM, 40-MHz SPI, but requires 1.8–3.6 V supply and lacks unique serial numberValid for low-voltage systems (<2.0 V), but not suitable where traceability or 2.0 V minimum operation is requiredSelect when operating below 2.0 V or when serial number is unnecessary
AT25DF041A-SHN-T4-Mbit serial flash with 80-MHz DTR mode, but requires erase-before-write and has only 100K enduranceApplicable for code storage or infrequent config updates, not for high-frequency data loggingSelect only for read-mostly applications where write frequency is <100x/day

Compared with MB85RS1MT-FPNSE1 and AT25DF041A-SHN-T, FM25V10-DGTR uniquely delivers guaranteed 2.0 V operation, 1014 endurance, and built-in serial number - making it the sole choice for mission-critical, high-write industrial and medical data buffers requiring long-term reliability without voltage margin compromise.

Availability

FM25V10-DGTR is available at Aetrix Electronics and suitable for smart metering, industrial PLC data logging, medical calibration storage, and automotive telematics black box applications requiring stable component supply, long-lifecycle assurance, and RoHS-compliant sourcing.

Supply support for FM25V10-DGTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability nonvolatile memory and programmable system-on-chip solutions for industrial, automotive, and IoT applications.

The FM25V10 belongs to Cypress's F-RAM product line, engineered specifically to replace serial EEPROM and flash in applications demanding unlimited write endurance, instant writes, and extended data retention without complex firmware management.

FAQ

Is FM25V10-DGTR pin-compatible with standard 8-pin SOIC SPI flash or EEPROM devices?

Yes - FM25V10-DGTR uses identical 8-pin SOIC footprint and SPI signal mapping (CS, SCK, SI, SO, WP, HOLD, VDD, VSS) as industry-standard serial flash and EEPROM. Pin functions match JEDEC-standard SPI memory pinouts, enabling direct PCB-level replacement without layout changes.

Does FM25V10-DGTR require special initialization or firmware drivers beyond standard SPI?

No - FM25V10-DGTR uses standard SPI opcodes (0x02 for write, 0x03 for read, 0x05 for status read) and requires no erase commands or status polling. Existing SPI flash/EEPROM drivers can be reused with minor modifications to remove wait loops and adjust timing parameters.

What is the functional difference between FM25V10-DGTR and FM25VN10-DGTR?

FM25VN10-DGTR is a factory-programmed variant of FM25V10-DGTR that includes a unique, read-only 64-bit serial number stored in dedicated ROM. Both share identical memory density, timing, and electrical specs; only FM25VN10 provides board-level traceability via its unalterable serial ID.

Can FM25V10-DGTR operate reliably at 2.0 V while sustaining 40-MHz SPI communication?

Yes - FM25V10-DGTR is fully specified for 40-MHz operation down to 2.0 V, as confirmed in AC switching characteristics (Table 17, Rev. *K datasheet). At 2.0 V, tCLK min remains 25 ns, supporting full-speed transfers without derating or timing margin loss.

FM25V10-DGTR Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
F-RAM™
Package/Case:
8-WDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Programmable:
-
Memory Type:
Non-Volatile
Memory Format:
FRAM
Technology:
FRAM (Ferroelectric RAM)
Memory Size:
1Mbit
Memory Organization:
128K x 8
Memory Interface:
SPI
Clock Frequency:
40 MHz
Write Cycle Time - Word, Page:
-
Access Time:
9 ns
Voltage - Supply:
2V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-DFN (4x4.5)

FM25V10-DGTR FAQ

1.How can I place an order for FM25V10-DGTR through Aetrix?

Please submit a Request for Quotation (RFQ) for FM25V10-DGTR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FM25V10-DGTR reliable?

The price and inventory of FM25V10-DGTR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FM25V10-DGTR is usually 5 days.

3.What payment methods are accepted for FM25V10-DGTR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FM25V10-DGTR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FM25V10-DGTR?

FM25V10-DGTR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FM25V10-DGTR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FM25V10-DGTR?

For technical support, including FM25V10-DGTR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FM25V10-DGTR requirements.

6.How does Aetrix verify that FM25V10-DGTR is sourced from the original manufacturer or authorized distributors?

All FM25V10-DGTR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FM25V10-DGTR meets industry standards.

7.What is the process for return or replacement of FM25V10-DGTR?

All FM25V10-DGTR units undergo pre-shipment inspection (PSI). If there is an issue with FM25V10-DGTR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FM25V10-DGTR part is unused and in its original packaging.

Return procedure for FM25V10-DGTR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

FM25V10-DGTR Tags

  • FM25V10-DGTR
  • FM25V10-DGTR PDF
  • FM25V10-DGTR Datasheet
  • FM25V10-DGTR Specifications
  • FM25V10-DGTR Images
  • Infineon Technologies
  • Infineon Technologies FM25V10-DGTR
  • Buy FM25V10-DGTR
  • FM25V10-DGTR Price
  • FM25V10-DGTR Distributor
  • FM25V10-DGTR Supplier
  • FM25V10-DGTR Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER