Infineon Technologies FM25V20A-DGQ

Overview

FM25V20A-DGQ from Infineon is a 2-Mbit serial SPI ferroelectric RAM (F-RAM), logically organized as 256 K × 8, operating at up to 33 MHz with 2.0–3.6 V supply and –40°C to +105°C extended temperature range. It delivers zero-delay writes, 10¹⁴ read/write endurance, and 121-year data retention-enabling reliable nonvolatile logging in industrial controllers and sensor nodes where EEPROM or flash would suffer write latency or wear-out.

For engineers reviewing the FM25V20A-DGQ datasheet, FM25V20A-DGQ pinout, FM25V20A-DGQ application, or FM25V20A-DGQ equivalent, this page provides verified functional context, SPI timing behavior, hardware/software write protection mapping, and drop-in replacement guidance for serial nonvolatile memory designs requiring deterministic write latency and high-cycle reliability.

Technical Context

The FM25V20A-DGQ implements a synchronous SPI slave interface supporting modes 0 (CPOL=0, CPHA=0) and 3 (CPOL=1, CPHA=1), with opcode-driven command execution including WREN, WRDI, RDSR, WRSR, READ, FAST_READ, and SLEEP. All writes complete within one SPI transaction-no polling or internal write cycles required.

Its on-die control logic includes a nonvolatile status register (3-bit), hardware write protect via active-low WP pin, software block protection (1/4, 1/2, or full array), and a read-only Device ID register returning manufacturer ID (0x01) and product ID (0x20). The exposed pad is NC and must not be soldered.

Key Specifications

Pinout & Package

FM25V20A-DGQ is housed in an 8-pin thin DFN package (5 mm × 6 mm × 0.75 mm) with exposed pad (NC, not connected to die and must remain unsoldered).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Compared with CY15B102QN-SD25XIT and AT25DF021A-SHN-T, FM25V20A-DGQ uniquely delivers DFN packaging, deterministic sub-microsecond writes, and guaranteed 121-year retention at +105°C-making it the sole option for high-cycle, space-constrained, extended-temperature embedded logging.

Availability

FM25V20A-DGQ is available at Aetrix Electronics and suitable for industrial data loggers, smart meter firmware storage, and automotive body control modules requiring stable component supply across long-lifecycle programs.

Supply support for FM25V20A-DGQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and high-reliability memory solutions, with global manufacturing and automotive-grade qualification expertise.

FM25V20A-DGQ belongs to Infineon's F-RAM product line, engineered specifically for mission-critical nonvolatile data capture in extended-temperature industrial and automotive systems where write latency and endurance are design-critical.

FAQ

Does FM25V20A-DGQ require external high-voltage programming or erase pulses?

No. FM25V20A-DGQ uses ferroelectric capacitor switching for data storage-no erase cycles, no high-voltage generators, and no program/erase latency. All writes execute synchronously with SPI clock edges at standard VDD levels (2.0–3.6 V), eliminating need for charge pumps or complex voltage regulation.

Can the DNU pin be left floating on the PCB?

No. Per Infineon's datasheet (Rev. *G, Table 1), the DNU pin has no internal connection but must be tied to VDD to prevent undefined logic states and ensure compliance with IDD specifications. Leaving it floating violates recommended layout rules and may cause increased standby current or signal integrity issues.

What happens to data during a power interruption mid-write?

Data remains fully intact. Because FM25V20A-DGQ writes complete within the final SPI clock cycle-no internal state machines or multi-cycle operations-the memory cell retains its prior value if VDD drops before the final bit is latched. No partial writes or corruption occurs, unlike flash or EEPROM.

Is the exposed pad on the DFN package electrically connected?

No. The exposed pad is explicitly designated "No connect" in the datasheet (Figure 2 and Table 1) and is not bonded to the silicon die. It must remain unsoldered and unconnected to any PCB net-including ground-to avoid mechanical stress or thermal mismatch that could compromise package reliability.