Infineon Technologies FM25VN10-GTR

Overview

FM25VN10-GTR from Cypress Semiconductor is a 1-Mbit (128K × 8) serial SPI ferroelectric RAM (F-RAM) with NoDelay™ writes, 10¹⁴ read/write endurance, and 151-year data retention. It operates at 2.0–3.6 V over –40 °C to +85 °C and supports 40-MHz SPI modes 0 and 3. Used in industrial data loggers for high-frequency sensor timestamping where EEPROM/flash write latency causes data loss.

For engineers reviewing the FM25VN10-GTR datasheet, FM25VN10-GTR pinout, FM25VN10-GTR application, or FM25VN10-GTR equivalent, key selection criteria include write-cycle endurance, zero-write-latency operation, hardware/software write protection, unique serial number support, and drop-in SPI compatibility with legacy serial flash and EEPROM footprints.

Technical Context

The FM25VN10-GTR implements a true nonvolatile RAM architecture using lead zirconate titanate (PZT) ferroelectric capacitors, enabling byte-level writes without erase cycles or polling. Its internal logic includes a 17-bit address counter, 3-bit opcode decoder, and nonvolatile status register with WPEN bit control.

It functions as an SPI slave device with dual-mode clocking (CPOL=0/1, CPHA=0/1), tristatable SO output, and HOLD pin suspension capability. The device integrates manufacturer ID (0x01), product ID (0x20), and a factory-programmed 64-bit read-only serial number-exclusive to the "N" variant (FM25VN10).

Key Specifications

Pinout & Package

FM25VN10-GTR is available in two RoHS-compliant packages: 8-pin SOIC (3.9 mm × 4.9 mm) and 8-pin DFN (2 mm × 3 mm) with exposed pad (non-connected). Both share identical pin functionality and ordering code suffix "-GTR" denotes tape-and-reel packaging.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar serial nonvolatile memory applications.

Compared with MB85RS1MT-FPNSE1 and AT25DF041A-SHN-T, FM25VN10-GTR uniquely delivers sub-microsecond write commit, full 2.0–3.6 V operation, integrated hardware write protection, and factory-unique serialization-making it the only option meeting simultaneous requirements for industrial logging, regulatory traceability, and wide-voltage embedded deployment.

Availability

FM25VN10-GTR is available at Aetrix Electronics and suitable for industrial data loggers, smart meter firmware storage, and automotive telematics ECUs requiring stable component supply across extended product lifecycles.

Supply support for FM25VN10-GTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability nonvolatile memory and microcontroller solutions for industrial, automotive, and IoT applications.

The FM25V-series F-RAM product line targets applications demanding extreme write endurance, zero-latency nonvolatility, and seamless SPI replacement of legacy EEPROM/flash-especially in power-constrained or mission-critical environments.

FAQ

Is FM25VN10-GTR pin-compatible with standard 8-pin SOIC SPI flash devices?

Yes-FM25VN10-GTR shares identical pinout, voltage levels, and SPI command set with industry-standard 8-pin serial flash (e.g., AT25DF041A) and EEPROM (e.g., CAT25128), enabling direct PCB footprint replacement without layout changes. All control signals (CS, SCK, SI, SO, WP, HOLD) map one-to-one, and timing parameters fall within JEDEC-compliant SPI specifications.

What is the functional difference between FM25V10 and FM25VN10?

The "N" suffix denotes inclusion of a factory-programmed, read-only 64-bit unique serial number-absent in FM25V10. Both share identical memory density, endurance, retention, and electrical specs. FM25VN10 adds traceability for anti-counterfeiting and regulatory compliance, with no impact on performance or pinout.

Does FM25VN10-GTR require external hardware for write protection?

No-FM25VN10-GTR integrates three independent write protection layers: hardware (WP pin), software (WREN/WRDI instructions), and configurable block protection (1/4, 1/2, or full array). The WP pin provides immediate physical disable of status register writes when asserted, eliminating need for external logic or resistors unless custom hold timing is required.

Can FM25VN10-GTR operate reliably at 2.0 V during brown-out conditions?

Yes-the device is fully specified down to 2.0 V across the full industrial temperature range (–40 °C to +85 °C), including AC timing, write endurance, and data retention. Internal voltage regulation ensures stable core operation, and the 5 µA sleep current enables safe retention during extended low-VDD periods without data loss.