Infineon Technologies FM28V020-SG

Overview

FM28V020-SG from Infineon Technologies (formerly Cypress) is a 256-Kbit (32K × 8) parallel-interface ferroelectric RAM (F-RAM) with NoDelay™ writes, 10¹⁴ read/write endurance, and 151-year data retention. It functions as a nonvolatile memory replacement for SRAM in industrial logging, metering, and real-time data capture systems requiring frequent writes without backup power.

For engineers reviewing the FM28V020-SG datasheet, FM28V020-SG pinout, FM28V020-SG application, or FM28V020-SG equivalent, key selection criteria include its SRAM-compatible 28-pin SOIC pinout, 70-ns access time, 2.0–3.6 V operation, industrial temperature range (–40 °C to +85 °C), and absence of write latency or battery dependency.

Technical Context

The FM28V020-SG implements a ferroelectric capacitor-based memory array organized as 32K × 8, enabling true byte-level nonvolatility with no write delay. Its control logic supports both CE- and WE-initiated read/write cycles, with address latching on CE falling edge and write completion on WE rising edge - eliminating polling or wait states.

Page mode operation leverages A2–A0 for rapid sequential access within a row (8-column page), while pre-charge is automatically triggered by upper address (A14–A3) changes or CE deassertion. The device requires no external capacitors or voltage supervisors and operates reliably under voltage undershoots and mechanical stress.

Key Specifications

Pinout & Package

FM28V020-SG is supplied in a 28-pin Small Outline Integrated Circuit (SOIC) package, 300 mil width, RoHS-compliant, with standard gull-wing leads for reflow soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel memory applications.

Compared with CY14B102QN-SXI and FM24V020-SG, FM28V020-SG uniquely supports full 2.0–3.6 V operation in the industry-standard 28-pin SOIC footprint, making it optimal for legacy SRAM drop-in upgrades where voltage headroom and package compatibility are critical.

Availability

FM28V020-SG is available at Aetrix Electronics and suitable for smart metering, industrial PLC data logging, and automotive body control modules requiring stable component supply, long-term obsolescence management, and guaranteed RoHS compliance.

Supply support for FM28V020-SG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT applications.

The FM28V020-SG belongs to Infineon's F-RAM portfolio, designed specifically to replace battery-backed SRAM and serial EEPROM in high-write-cycle, mission-critical embedded systems where data integrity and write speed are non-negotiable.

FAQ

Is FM28V020-SG truly a drop-in replacement for standard 32K × 8 SRAMs?

Yes - FM28V020-SG uses identical pinout, timing, and electrical signaling as industry-standard parallel SRAMs. It accepts the same address/data/control signals (CE, WE, OE, A0–A14, DQ0–DQ7), requires no firmware changes, and operates with the same 70-ns access time. No external components or timing adjustments are needed for migration.

Does FM28V020-SG require special power sequencing or voltage supervision?

No - FM28V020-SG has no power-on reset requirement, no minimum VDD ramp rate, and no need for external voltage supervisors. It retains data across full power cycles and tolerates voltage undershoots to –0.5 V. Its 2.0–3.6 V operating range allows direct connection to unregulated 3.3 V rails without LDOs or monitoring circuits.

How does FM28V020-SG handle simultaneous read and write operations?

FM28V020-SG does not support true concurrent read/write. Each cycle is either a read (CE↓ + OE↓, WE=HIGH) or write (CE↓ + WE↓). However, because write latency equals read latency (70 ns), and writes commit immediately on WE↑, there is no bus blocking or arbitration delay - unlike EEPROM or Flash, which stall the bus during internal programming.

Can FM28V020-SG be used in place of battery-backed SRAM (BBSRAM) without redesigning the PCB?

Yes - FM28V020-SG replaces BBSRAM monolithically: it removes the battery, backup capacitor, charge circuitry, and associated footprint. Its 28-pin SOIC matches common BBSRAM packages (e.g., STK15C88), allowing direct socket replacement. No changes to address decoding, timing, or power delivery are required.