Infineon Technologies FM28V020-SGTR

Overview

FM28V020-SGTR from Infineon Technologies (formerly Cypress) is a 256-Kbit (32K × 8) parallel-interface ferroelectric RAM (F-RAM) with NoDelay™ writes, 10¹⁴ read/write endurance, and 151-year data retention. It operates at 2.0–3.6 V over –40 °C to +85 °C and replaces battery-backed SRAM in industrial logging, metering, and real-time event capture systems.

For engineers reviewing the FM28V020-SGTR datasheet, FM28V020-SGTR pinout, FM28V020-SGTR application, or FM28V020-SGTR equivalent, key selection criteria include SRAM-compatible timing (70-ns access), page-mode support for burst writes, CE/WE-controlled operation, and monolithic nonvolatility without backup power or wear leveling.

Technical Context

The FM28V020-SGTR implements a parallel asynchronous interface with dual write control paths: CE-initiated and WE-initiated cycles. Its ferroelectric memory array uses row/column decoding (A14–A3 for rows, A2–A0 for columns), enabling page-mode access across eight column locations per row without CE toggling.

Unlike EEPROM or Flash, it performs true byte-level writes with no internal erase or programming delay - data is stored nonvolatily on the rising edge of WE or falling edge of CE. The device supports SRAM-style bus protocols including tristate DQ control via OE and automatic pre-charge on CE high or upper-address change.

Key Specifications

Pinout & Package

FM28V020-SGTR is packaged in a 28-pin SOIC (Small Outline Integrated Circuit) surface-mount package, RoHS-compliant and optimized for automated PCB assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel-memory applications.

Compared with CY14B104Q-SXI and FM24V10-SG, FM28V020-SGTR uniquely balances SRAM-equivalent speed, 28-pin SOIC compactness, and full 32K × 8 parallel compatibility - making it optimal for legacy SRAM upgrades and high-throughput industrial logging.

Availability

FM28V020-SGTR is available at Aetrix Electronics and suitable for smart metering, industrial PLC data logging, and medical diagnostic equipment requiring stable component supply and long-term lifecycle assurance.

Supply support for FM28V020-SGTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT markets.

The FM28V020-SGTR belongs to Infineon's F-RAM portfolio - engineered specifically to replace battery-backed SRAM and legacy EEPROM in high-write-cycle, mission-critical embedded systems where reliability, speed, and zero-maintenance nonvolatility are mandatory.

FAQ

Is FM28V020-SGTR truly a drop-in replacement for standard SRAMs?

Yes - it uses an industry-standard 32K × 8 parallel pinout, 70-ns access time, and identical CE/OE/WE control signaling. No timing adjustments, address decoding changes, or firmware modifications are needed. The only design consideration is ensuring CE and WE are not both LOW during power-up/down to prevent inadvertent writes.

How does NoDelay™ writing differ from conventional nonvolatile memory write methods?

NoDelay™ means data is written to the ferroelectric array immediately on the rising edge of WE - no internal erase, no programming delay, no polling required. Unlike EEPROM or Flash, there is zero latency between write command and nonvolatile commit, enabling true SRAM-like bus behavior with guaranteed atomicity per byte.

What is the significance of 151-year data retention at +85 °C?

This specification guarantees data integrity for 151 years when stored continuously at maximum operating temperature - far exceeding typical product lifecycles. It reflects accelerated testing per JEDEC JESD22-A117 and validates suitability for infrastructure applications like utility meters and medical devices where field replacement is impractical.

Can FM28V020-SGTR operate reliably in high-vibration or high-humidity environments?

Yes - as a monolithic silicon device with no battery, electrolytic capacitor, or solder joints susceptible to mechanical fatigue, it meets MIL-STD-883H vibration and humidity resistance requirements. Its ferroelectric process is inherently resistant to moisture ingress and shock-induced bit corruption, unlike battery-backed SRAM modules.