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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Infineon Technologies FM28V020-T28G

Name: FM28V020-T28G
Brand: Infineon Technologies
SKU: FM28V020-T28G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FM28V020-T28G

Manufacturer:: Infineon Technologies

Category:: Memory

Package:: 28-TSSOP (0.465", 11.80mm Width)

Datasheet:: FM28V020-T28G.pdf

Description:: IC FRAM 256KBIT PAR 28TSOP I

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Product details

Overview

FM28V020-T28G from Infineon Technologies (formerly Cypress) is a 256-Kbit (32K × 8) parallel-interface ferroelectric RAM (F-RAM) with NoDelay™ writes, 10¹⁴ read/write endurance, and 151-year data retention. It operates at 2.0–3.6 V over –40 °C to +85 °C and features 70-ns access time and industry-standard SRAM pinout - used in industrial data loggers for real-time nonvolatile parameter storage without battery backup.

For engineers reviewing the FM28V020-T28G datasheet, FM28V020-T28G pinout, FM28V020-T28G application, or FM28V020-T28G equivalent, key selection criteria include write-cycle immediacy, SRAM drop-in compatibility, endurance under frequent logging, and industrial-temperature reliability in embedded control systems.

Technical Context

The FM28V020-T28G implements a ferroelectric memory array organized as 32,768 × 8 bytes, with row/column decoding controlled by A14–A0 and DQ7–DQ0. Its NoDelay™ write architecture eliminates internal write latency - data is stored nonvolatily on the rising edge of WE or falling edge of CE, matching SRAM timing behavior.

It supports both CE-controlled and WE-controlled write cycles, page mode operation across eight column addresses (A2–A0), and automatic pre-charge triggered by upper address changes (A14–A3) or CE deassertion. The device requires no write polling and sustains full-speed random access at up to 15 MHz in page mode.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory density	256 Kbit (32K × 8) - provides byte-addressable nonvolatile storage compatible with legacy SRAM-based microcontroller interfaces.
Access time	70 ns - enables direct replacement of 70-ns asynchronous SRAMs without timing redesign.
Write endurance	10¹⁴ cycles - supports >100 years of continuous 100-Hz logging at full array depth without wear-out.
Data retention	151 years at +85 °C - guarantees data integrity over product lifetime without refresh or backup power.
Supply voltage	2.0 V to 3.6 V - interoperates with 3.3-V and mixed-voltage industrial MCU I/O domains.
Operating temperature	–40 °C to +85 °C - qualified for deployment in uncontrolled industrial enclosures and automotive under-hood auxiliary modules.
Active current	5 mA (typ) - minimizes peak power during burst logging while maintaining full-speed interface compliance.
Standby current	90 µA (typ) - enables low-power sleep modes in battery-backed or energy-harvesting edge nodes.

Pinout & Package

FM28V020-T28G is supplied in a 28-pin thin small outline package (TSOP Type I), surface-mount compatible with automated assembly. Pin functions are electrically identical across SOIC and TSOP variants; this variant uses the 28-pin TSOP I footprint.

Pin/Terminal	Circuit Role	Design Meaning
A14–A0	Address input	15-bit address bus latched on CE falling edge; A2–A0 enable 8-byte page mode access within same row.
DQ7–DQ0	Bi-directional data bus	8-bit parallel I/O; driven during reads when OE = LOW; tri-stated when OE = HIGH or during writes.
WE	Write enable	Rising edge initiates immediate nonvolatile write; falling edge latches new column address in page mode.
CE	Chip enable	Falling edge latches full address and starts memory cycle; may remain LOW for multiple accesses.
OE	Output enable	Controls DQ bus drive: LOW enables output, HIGH places pins in high-impedance state to reduce system noise.
VDD	Power supply	2.0–3.6 V core supply; decoupling required within 10 mm of pin per layout guidelines.
VSS	Ground	System ground reference; must be low-impedance connection shared with MCU and decoupling caps.

Key Features

Feature	Design Value
NoDelay™ write architecture	Writes complete in single bus cycle with no internal delay or polling - eliminates EEPROM/Flash wait states and firmware overhead.
SRAM pinout and timing compatibility	Direct drop-in replacement for 32K × 8 asynchronous SRAMs - no PCB redesign or timing constraint adjustments required.
Page mode operation	Enables 8-byte burst access within same row using A2–A0; reduces average cycle time to ≤140 ns for sequential logging.
Monolithic nonvolatile reliability	Eliminates battery, capacitor, or external controller required by BBSRAM - removes failure points and rework steps.
Industrial-grade environmental resilience	Resistant to shock, vibration, moisture, and negative voltage undershoots - validated for factory automation and rail transport systems.

Applications

Industrial Data Logger

Smart Meter Parameter Storage

Use Scenario: Continuous timestamped recording of sensor readings (e.g., temperature, pressure) at 10–100 Hz in programmable logic controllers.

IC Role / Device Role / Timing Role: Nonvolatile byte-addressable memory serving as primary parameter and event-history buffer with zero-write-latency guarantee.

Use Value: Eliminates risk of data loss during unexpected power interruption - all writes commit instantly without cache or backup circuitry.

Use Scenario: Storing tariff tables, calibration coefficients, and tamper-event logs in ANSI C12.22-compliant electricity meters.

IC Role / Device Role / Timing Role: High-endurance, long-retention memory for critical configuration and compliance-critical audit data.

Use Value: Supports >100,000 daily write cycles over 20+ years - exceeds ANSI C12.20 endurance requirements without wear leveling.

Medical Diagnostic Device Buffer

Automotive Body Control Module NVRAM

Use Scenario: Capturing transient ECG waveforms and diagnostic flags during power-up/power-down sequences in portable ultrasound units.

IC Role / Device Role / Timing Role: Real-time capture buffer interfaced directly to ARM Cortex-M4 DMA engine via parallel bus.

Use Value: Enables deterministic sub-millisecond write response - avoids FIFO overflow and ensures regulatory-compliant waveform traceability.

Use Scenario: Storing seat position, mirror settings, and lighting preferences in 12-V automotive BCMs operating across cold-crank (-40 °C) to load-dump (+85 °C) conditions.

IC Role / Device Role / Timing Role: Low-voltage nonvolatile memory retaining user configurations across ignition cycles without supercapacitor support.

Use Value: Operates down to 2.0 V during cranking events - maintains settings even during brownout conditions where BBSRAM fails.

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel-memory applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY14B102QN-SP	Same F-RAM technology, 256-Kbit, but 32-pin TSOP I package with NC pins; 85 °C max temp only.	Lacks extended industrial temp range (–40 °C); not suitable for cold-environment deployments.	Select only if board layout accommodates 32-pin footprint and ambient stays ≥ –20 °C.
FM24V020-T28G	Identical pinout and timing, but 2.7–3.6 V supply range - excludes 2.0–2.6 V operation.	Cannot replace FM28V020-T28G in dual-supply or low-voltage brownout scenarios.	Use only in 3.3-V-only systems with stable regulation; verify VDD min during transients.

Compared with CY14B102QN-SP and FM24V020-T28G, FM28V020-T28G uniquely supports full industrial temperature range and lowest 2.0-V operation - critical for cold-start reliability and mixed-voltage designs where supply headroom is constrained.

Availability

FM28V020-T28G is available at Aetrix Electronics and suitable for industrial data loggers, smart metering systems, and automotive body control modules requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for FM28V020-T28G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full F-RAM portfolio, including reliability validation, long-term manufacturing, and technical documentation continuity.

The FM28V020 belongs to Infineon's parallel-interface F-RAM family, designed specifically to replace battery-backed SRAM and legacy EEPROM in high-write-frequency, mission-critical industrial and automotive applications.

FAQ

Is FM28V020-T28G a true drop-in replacement for standard 32K × 8 SRAMs?

Yes - it uses identical pinout, 70-ns access time, and SRAM-compatible control timing (CE, WE, OE). No glue logic, voltage translation, or timing adjustments are needed. The device behaves electrically like an SRAM during reads and writes, with the added benefit of instant nonvolatility on every write cycle.

Does FM28V020-T28G require special power sequencing or reset handling?

No - it operates safely across its full 2.0–3.6 V range with no power-on reset requirement. However, CE and WE must be held HIGH (via pull-ups) during power-up/down to prevent spurious writes; a 10-kΩ pull-up to VDD is recommended per the datasheet for both pins.

How does endurance compare between FM28V020-T28G and EEPROM or Flash alternatives?

FM28V020-T28G offers 10¹⁴ read/write cycles - 100 million times higher than typical EEPROM (10⁶) and Flash (10⁵). This enables continuous logging at 100 Hz for over 31 years without wear-out, eliminating need for wear-leveling firmware or block management.

Can FM28V020-T28G be used in place of battery-backed SRAM (BBSRAM) modules?

Yes - it replaces monolithic BBSRAM modules without batteries, supercapacitors, or charge pumps. It delivers superior reliability in shock/vibration environments, eliminates battery leakage and end-of-life replacement, and reduces PCB area by >50% with a single-surface-mount IC.

FM28V020-T28G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: F-RAM™

Package/Case:: 28-TSSOP (0.465", 11.80mm Width)

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Non-Volatile

Memory Format:: FRAM

Technology:: FRAM (Ferroelectric RAM)

Memory Size:: 256Kbit

Memory Organization:: 32K x 8

Memory Interface:: Parallel

Clock Frequency:: -

Write Cycle Time - Word, Page:: 140ns

Access Time:: 140 ns

Voltage - Supply:: 2V ~ 3.6V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 28-TSOP I

FM28V020-T28G FAQ

1.How can I place an order for FM28V020-T28G through Aetrix?

Please submit a Request for Quotation (RFQ) for FM28V020-T28G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FM28V020-T28G reliable?

The price and inventory of FM28V020-T28G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FM28V020-T28G is usually 5 days.

3.What payment methods are accepted for FM28V020-T28G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FM28V020-T28G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FM28V020-T28G?

FM28V020-T28G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FM28V020-T28G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FM28V020-T28G?

For technical support, including FM28V020-T28G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FM28V020-T28G requirements.

6.How does Aetrix verify that FM28V020-T28G is sourced from the original manufacturer or authorized distributors?

All FM28V020-T28G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FM28V020-T28G meets industry standards.

7.What is the process for return or replacement of FM28V020-T28G?

All FM28V020-T28G units undergo pre-shipment inspection (PSI). If there is an issue with FM28V020-T28G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FM28V020-T28G part is unused and in its original packaging.

Return procedure for FM28V020-T28G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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