Infineon Technologies FM28V020-T28GTR

Overview

FM28V020-T28GTR from Infineon Technologies (formerly Cypress) is a 256-Kbit (32K × 8) parallel-interface ferroelectric RAM (F-RAM) with NoDelay™ writes, 10¹⁴ read/write endurance, and 151-year data retention. It functions as a nonvolatile memory replacement for SRAM in industrial logging, metering, and real-time control systems requiring frequent rapid writes without backup power or wear leveling.

For engineers reviewing the FM28V020-T28GTR datasheet, FM28V020-T28GTR pinout, FM28V020-T28GTR application, or FM28V020-T28GTR equivalent, key selection criteria include its 70-ns access time, 2.0–3.6 V supply range, industrial temperature rating (–40 °C to +85 °C), and compatibility with standard SRAM timing and address/data bus protocols.

Technical Context

The FM28V020-T28GTR implements a parallel 32K × 8 F-RAM array using ferroelectric capacitor-based storage cells, enabling true nonvolatility with SRAM-like interface behavior. Its architecture supports both CE-initiated and WE-controlled read/write cycles, with identical 70-ns access and 140-ns cycle timing for reads and writes.

Page mode operation leverages A2–A0 for column addressing within a row (8 columns per 32-byte page), allowing burst access without toggling CE. Pre-charge is automatically triggered by upper-address (A14–A3) changes or CE deassertion, ensuring row closure before new access.

Key Specifications

Pinout & Package

FM28V020-T28GTR is supplied in a 28-pin thin small outline package (TSOP Type I), surface-mount compatible with JEDEC MO-153 standards. Pin count and layout match industry-standard 32K × 8 SRAMs for drop-in PCB replacement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel memory applications.

Compared with CY14B102QN-SPXC and AS6C4008-70TIN, FM28V020-T28GTR uniquely delivers monolithic nonvolatility with SRAM timing-enabling drop-in replacement without firmware, layout, or power architecture changes.

Availability

FM28V020-T28GTR is available at Aetrix Electronics and suitable for smart metering, industrial PLC data logging, and automotive body control modules requiring stable component supply and long-term lifecycle support.

Supply support for FM28V020-T28GTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired Cypress Semiconductor in 2020 and now owns and supports the full F-RAM product portfolio, including manufacturing, documentation, and technical support.

The FM28V020 belongs to Infineon's parallel-interface F-RAM family, designed specifically for industrial and automotive applications demanding high endurance, fast write performance, and true nonvolatility without backup components.

FAQ

Is FM28V020-T28GTR pin-compatible with standard 32K × 8 SRAMs?

Yes - it uses an industry-standard 28-pin TSOP Type I footprint with identical A14–A0, DQ7–DQ0, CE, WE, OE, VDD, and VSS pin assignments. No PCB redesign is needed for drop-in replacement of devices like AS6C4008 or IS61LV25616AL, provided timing margins accommodate 70-ns access.

Does FM28V020-T28GTR require external hardware for nonvolatility?

No - it is monolithic nonvolatile memory. Unlike battery-backed SRAM, it retains data without capacitors, batteries, or charge pumps. The ferroelectric cell structure inherently preserves state after power removal, eliminating associated failure modes and rework steps.

What is the maximum sustained write rate supported by FM28V020-T28GTR?

It supports continuous 70-ns write cycles - up to ~14.3 million writes per second - limited only by bus timing and controller capability. With page mode enabled, eight sequential writes within the same row complete in ≤140 ns total, achieving effective throughput of >57 MB/s in burst scenarios.

How does FM28V020-T28GTR handle power loss during a write operation?

Writes are atomic and immediate: data is stored in the ferroelectric array at the rising edge of WE, with no intermediate cache or charge accumulation. If power fails mid-cycle, the write either completes fully or does not initiate - no partial or corrupted writes occur, unlike flash or EEPROM.