Infineon Technologies FM28V020-TG

Overview

FM28V020-TG from Infineon Technologies (formerly Cypress) is a 256-Kbit (32K × 8) parallel-interface ferroelectric RAM (F-RAM) with NoDelay™ writes, 10¹⁴ read/write endurance, and 151-year data retention. It functions as a nonvolatile memory replacement for SRAM in industrial logging, metering, and real-time control systems requiring frequent rapid writes without backup power or wear leveling.

For engineers reviewing the FM28V020-TG datasheet, FM28V020-TG pinout, FM28V020-TG application, or FM28V020-TG equivalent, key selection criteria include its SRAM-compatible 28-pin SOIC package, 70-ns access time, 2.0–3.6 V supply range, –40 °C to +85 °C operation, and absence of write latency or data polling requirements.

Technical Context

The FM28V020-TG implements a ferroelectric capacitor-based memory array organized as 32K × 8 bytes, with row/column decoding controlled by A14–A0 and DQ7–DQ0. Its core architecture enables true byte-level nonvolatility without charge pumps or erase cycles, delivering identical read and write timing.

It supports two write initiation modes: CE-controlled (write begins on CE fall with WE already low) and WE-controlled (read initiates on CE fall, then write triggers on subsequent WE fall). Page mode allows sequential access to eight column locations (A2–A0) within the same row without toggling CE, enabling burst throughput up to 15 MHz.

Key Specifications

Pinout & Package

FM28V020-TG is supplied in a 28-pin Small Outline Integrated Circuit (SOIC) package, 300 mil width, RoHS-compliant, surface-mountable with standard reflow profiles.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel memory applications.

Compared with CY14B102QN-SP and FM24V02-SO, FM28V020-TG offers the lowest-risk migration path from legacy SRAM designs due to its exact 28-pin SOIC footprint, guaranteed 70-ns timing, and industrial-grade qualification-without requiring interface or thermal derating trade-offs.

Availability

FM28V020-TG is available at Aetrix Electronics and suitable for industrial data loggers, smart electricity meters, and automotive body control modules requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for FM28V020-TG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power systems, automotive ICs, and memory solutions with emphasis on reliability and industrial longevity.

The FM28V020-TG belongs to Infineon's F-RAM product line, engineered specifically to replace battery-backed SRAM and serial EEPROM in high-write-cycle, mission-critical embedded systems where data integrity and zero-latency writes are mandatory.

FAQ

Is FM28V020-TG a true drop-in replacement for standard SRAMs?

Yes. FM28V020-TG uses an industry-standard 28-pin SOIC package with identical 32K × 8 pinout, 70-ns access time, and asynchronous parallel interface. It requires no timing changes, additional control logic, or firmware modifications when replacing SRAMs like IS61LV25616AL or AS6C4008 in existing designs.

Does FM28V020-TG require a write-enable sequence or polling to confirm write completion?

No. FM28V020-TG performs NoDelay™ writes: data is stored nonvolatility at the rising edge of WE or CE, whichever occurs first. There is no internal write cycle, no status register, and no need for polling-unlike EEPROM or Flash-making it deterministic and interrupt-safe.

What happens during power loss while CE or WE is active?

If VDD drops below 2.0 V during a write, the FM28V020-TG's internal circuitry prevents partial writes using voltage-monitoring logic. Data written before the undervoltage threshold is retained; incomplete writes are aborted cleanly-no corruption or bit errors occur.

Can FM28V020-TG operate reliably at 2.0 V minimum supply?

Yes. All specifications-including 70-ns access time, 10¹⁴ endurance, and 151-year retention-are guaranteed down to VDD = 2.0 V at –40 °C to +85 °C. This enables use in battery-powered devices with aging Li-ion cells or energy-harvesting systems where voltage sags below 2.5 V are common.