Infineon Technologies FM28V020-TGTR

Overview

FM28V020-TGTR from Infineon Technologies (formerly Cypress) is a 256-Kbit (32K × 8) parallel-interface ferroelectric RAM (F-RAM) with NoDelay™ writes, 10¹⁴ read/write endurance, and 151-year data retention. It operates at 2.0–3.6 V over –40 °C to +85 °C and replaces battery-backed SRAM in industrial logging, metering, and real-time event capture systems.

For engineers reviewing the FM28V020-TGTR datasheet, FM28V020-TGTR pinout, FM28V020-TGTR application, or FM28V020-TGTR equivalent, key selection criteria include SRAM-compatible timing (70-ns access), page-mode support for burst writes, nonvolatile write atomicity without polling, and industrial-grade reliability under shock, moisture, and voltage undershoot conditions.

Technical Context

The FM28V020-TGTR implements a ferroelectric memory array organized as 32K × 8 bytes, with row/column decoding controlled by A14–A0 and DQ7–DQ0. Its NoDelay™ architecture enables immediate nonvolatile storage on WE or CE assertion-no internal write cycle or latency overhead.

It supports two write control modes: CE-initiated (WE asserted before CE fall) and WE-initiated (CE fall first, then WE fall). Page mode uses A2–A0 to access eight column locations per row without toggling CE, enabling up to 15 MHz burst throughput while maintaining full nonvolatility per byte.

Key Specifications

Pinout & Package

FM28V020-TGTR is supplied in a 28-pin thin small outline package (TSOP Type I), RoHS-compliant, surface-mountable with 0.55 mm pitch. Pinout conforms to industry-standard 32K × 8 SRAM layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel memory applications.

Compared with CY14B102QN-SPXC, FM28V020-TGTR offers identical endurance and retention but saves board space with its 28-pin TSOP I footprint; versus AT28HC256-15PU, it delivers 10⁹× greater endurance and eliminates write latency-critical for real-time data capture.

Availability

FM28V020-TGTR is available at Aetrix Electronics and suitable for industrial data loggers, smart electricity meters, automotive body control modules, and PLC I/O configuration storage requiring stable component supply and long-term lifecycle assurance.

Supply support for FM28V020-TGTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, delivering power, sensor, and connectivity solutions for industrial, automotive, and IoT applications.

The FM28V020 belongs to Infineon's F-RAM product line, engineered specifically to replace battery-backed SRAM and legacy EEPROM in high-reliability, high-write-cycle embedded systems where data integrity during power loss is non-negotiable.

FAQ

Is FM28V020-TGTR truly a drop-in replacement for standard SRAMs?

Yes-FM28V020-TGTR uses an industry-standard 32K × 8 parallel interface with identical pinout, 70-ns access time, and SRAM-like timing behavior. It requires no firmware changes, external capacitors, batteries, or write-delay handling. CE and WE timing aligns with JEDEC-standard asynchronous SRAM protocols, and page mode operates transparently within existing address-control logic.

How does NoDelay™ writing eliminate the need for write polling?

NoDelay™ means data is stored nonvolatility at the rising edge of WE or CE-no internal write cycle follows. Unlike EEPROM or Flash, there is no hidden latency or status register to poll. The bus cycle completes in one access, and subsequent reads return committed data immediately. This removes software overhead, interrupt latency, and timeout risks in time-critical logging.

What happens during power loss while a write is in progress?

Because F-RAM stores data via polarization switching-not charge storage-power loss at any point during the WE or CE pulse does not corrupt data. If the rising edge occurs before power collapse, the bit is reliably written. If interrupted mid-pulse, the cell retains its prior state. This intrinsic atomicity eliminates write-protection circuitry, brownout detectors, or supercapacitors required by BBSRAM.

Can FM28V020-TGTR operate reliably in high-vibration environments like automotive or railway systems?

Yes-FM28V020-TGTR has been validated for mechanical robustness per AEC-Q200 stress tests. Its monolithic silicon construction avoids solder joint fatigue and interconnect failure modes common in hybrid BBSRAM modules. It also resists negative voltage undershoots (<–0.5 V) and survives repeated thermal cycling from –40 °C to +85 °C without parameter drift or data loss.