Infineon Technologies FM28V100-TG

Overview

FM28V100-TG from Infineon Technologies (formerly Cypress) is a 1-Mbit (128K × 8) parallel-interface ferroelectric RAM (F-RAM) with nonvolatile data retention, NoDelay™ write capability, and SRAM-compatible pinout. It operates from 2.0 V to 3.6 V over –40 °C to +85 °C, delivers 60-ns access time, and supports page-mode writes at 30-ns cycle time - ideal for industrial data logging systems requiring frequent, reliable, battery-free nonvolatile storage.

For engineers reviewing the FM28V100-TG datasheet, FM28V100-TG pinout, FM28V100-TG application, or FM28V100-TG equivalent, key selection criteria include its 10¹⁴ read/write endurance, 151-year data retention, absence of write delay or polling, compatibility with standard SRAM timing interfaces, and TSOP I package integration into legacy memory buses.

Technical Context

The FM28V100-TG implements a parallel asynchronous interface with dual chip enable (CE1/CE2) control logic and independent WE/OE timing, enabling both CE-initiated and WE-controlled read/write cycles. Its ferroelectric memory array eliminates charge-pump or erase-cycle overhead, allowing true byte-level writes in a single bus cycle without latency or wear leveling.

Page mode operation uses A2–A0 to access eight column locations within a 16,384-row array, supporting rapid sequential access without toggling CE. Pre-charge is automatically triggered by upper address (A16–A3) changes or CE deassertion, ensuring row closure before new access - critical for deterministic timing in deterministic real-time control loops.

Key Specifications

Pinout & Package

FM28V100-TG is housed in a 32-pin thin small outline package (TSOP I), surface-mount compatible with standard reflow profiles and IPC-7351B land patterns. The package supports JEDEC-standard thermal dissipation and mechanical robustness for high-vibration environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel memory applications.

Compared with CY14B101QN-SP and IS61LV12816AL-10TLI, FM28V100-TG uniquely combines TSOP I footprint, dual-CE page mode support, monolithic reliability, and guaranteed 151-year retention - making it the only option qualified for sealed, maintenance-free, long-lifecycle industrial deployments.

Availability

FM28V100-TG is available at Aetrix Electronics and suitable for industrial data loggers, automotive event recorders, smart meter firmware logs, and medical diagnostic device buffers requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for FM28V100-TG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensing, connectivity, and memory solutions for industrial, automotive, and IoT applications.

The FM28V100-TG belongs to Infineon's F-RAM product line, engineered specifically to replace battery-backed SRAM and serial EEPROM in high-write-frequency, mission-critical nonvolatile storage applications - prioritizing endurance, retention, and timing determinism over density or cost-per-bit.

FAQ

Is FM28V100-TG pin-compatible with standard 128K×8 SRAMs like IS61LV12816?

Yes - FM28V100-TG uses an industry-standard 32-pin TSOP I footprint with identical A0–A16, DQ0–DQ7, WE, OE, CE1, VDD, and VSS pin assignments. CE2 is an additional pin (pin 25) that remains unused in SRAM mode but enables enhanced page mode timing; it may be tied to VDD or left floating per design.

Does FM28V100-TG require external hardware for nonvolatile operation?

No - FM28V100-TG is monolithic: all nonvolatility is achieved through its integrated ferroelectric capacitor array. It requires no backup battery, supercapacitor, charge pump, or external voltage-monitoring circuitry, eliminating associated failure modes and qualification overhead.

What is the minimum VDD required for reliable NoDelay™ writes?

FM28V100-TG guarantees full functionality including NoDelay™ writes down to 2.0 V across the full industrial temperature range. At 2.0 V, tAA remains ≤60 ns and write endurance is maintained at 10¹⁴ cycles - verified per datasheet Rev. *G AC switching characteristics and endurance test reports.

Can FM28V100-TG be used in place of EEPROM in firmware update storage?

Yes - unlike EEPROM, FM28V100-TG supports true random-byte writes without block erasure or write latency. It eliminates polling and timeout handling in bootloader code, reduces firmware update time by >95%, and avoids EEPROM wear-out during frequent field updates - confirmed in Cypress application note AN91127.