Infineon Technologies FM28V100-TGTR

Overview

FM28V100-TGTR from Infineon Technologies (formerly Cypress) is a 1-Mbit (128K × 8) parallel-interface ferroelectric RAM (F-RAM) with nonvolatile data retention, NoDelay™ write capability, 60-ns access time, and industrial temperature range (–40 °C to +85 °C). It serves as a drop-in replacement for battery-backed SRAM in systems requiring frequent, rapid, and reliable nonvolatile writes - such as energy metering data logging and industrial PLC event buffers.

For engineers reviewing the FM28V100-TGTR datasheet, FM28V100-TGTR pinout, FM28V100-TGTR application, or FM28V100-TGTR equivalent, key selection criteria include its 10¹⁴ read/write endurance, 151-year data retention, SRAM-compatible 32-pin TSOP I footprint, and absence of write latency or data polling requirements.

Technical Context

The FM28V100-TGTR implements a parallel asynchronous interface with dual chip enable (CE1/CE2) control logic and independent WE/OE timing, enabling both CE-initiated and WE-controlled read/write cycles. Its ferroelectric memory array eliminates charge-pump-based write delays and supports true byte-level writes without erase cycles.

It features page mode operation across eight column addresses (A2–A0), allowing sequential access within a 16,384-row × 8-column array at ≤30 ns cycle time. Pre-charge is automatically triggered by upper address (A16–A3) changes or CE deassertion, ensuring deterministic row closure before new access.

Key Specifications

Pinout & Package

FM28V100-TGTR is housed in a 32-pin Thin Small Outline Package (TSOP I), surface-mount, RoHS-compliant, with standard 0.5 mm pitch and JEDEC MO-141AC footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel memory applications.

Compared with CY14B101Q-SXIT and AS6C1008-55ZIN, FM28V100-TGTR uniquely delivers SRAM-equivalent timing with monolithic nonvolatility - eliminating both serial protocol overhead and external backup components while maintaining pin-for-pin compatibility.

Availability

FM28V100-TGTR is available at Aetrix Electronics and suitable for smart metering, industrial PLCs, and medical diagnostic devices requiring stable component supply, long-lifecycle support, and guaranteed RoHS compliance.

Supply support for FM28V100-TGTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader focused on power systems, automotive, industrial, and IoT applications, with deep expertise in nonvolatile memory and embedded control solutions.

FM28V100-TGTR belongs to Infineon's F-RAM product line, engineered specifically for mission-critical data logging where write endurance, zero-latency persistence, and industrial reliability outweigh density or cost-per-bit considerations.

FAQ

Is FM28V100-TGTR truly a drop-in replacement for standard SRAMs?

Yes - it uses an identical 32-pin TSOP I package and industry-standard 128K × 8 parallel interface with matching pin functions (A0–A16, DQ0–DQ7, CE1/CE2, WE, OE, VDD, VSS). No timing or logic changes are needed; existing SRAM firmware and PCB layouts work without modification.

Does FM28V100-TGTR require special power sequencing or reset handling?

No - it operates across 2.0–3.6 V with no power-on reset requirement. However, pull-up resistors on CE1 and WE are recommended to prevent unintended writes during power-up/down. A 10-kΩ resistor to VDD suffices for both pins per the datasheet.

How does FM28V100-TGTR handle simultaneous CE and WE transitions?

The device prioritizes CE edges for address latching: CE1 falling (with CE2 HIGH) or CE2 rising (with CE1 LOW) initiates all accesses. WE toggling after CE activation enables WE-controlled writes; if WE is asserted before CE, the cycle begins as a write - no arbitration or conflict occurs.

Can FM28V100-TGTR be used in place of EEPROM or Flash for firmware storage?

No - it is a data memory, not program memory. It lacks instruction fetch capability, execute-in-place support, or block-erase architecture. It is optimized for high-frequency byte-write data logging, not code storage or boot ROM replacement.