Infineon Technologies FM28V102A-TG
- Part No.:
- FM28V102A-TG
- Manufacturer:
- Infineon Technologies
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
FM28V102A-TG.pdf
- Description:
- IC FRAM 1MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:

- Shipping:

Inventory:1,528
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Product details
Overview
FM28V102A-TG from Cypress Semiconductor is a 1-Mbit (64 K × 16) ferroelectric RAM (F-RAM) nonvolatile memory with SRAM-compatible parallel interface, 60-ns access time, 1014 read/write endurance, and 151-year data retention at +85 °C - deployed in industrial data logging, metering, and real-time event capture systems where rapid, reliable nonvolatile writes are critical.
For engineers reviewing the FM28V102A-TG datasheet, FM28V102A-TG pinout, FM28V102A-TG application, or FM28V102A-TG equivalent, key selection criteria include NoDelay™ write architecture, TSOP-II 44-pin compatibility with legacy SRAM footprints, byte-selectable 16-bit bus operation, and industrial −40 °C to +85 °C temperature range compliance.
Technical Context
The FM28V102A-TG implements a ferroelectric capacitor-based memory array organized as 64 K × 16 words, enabling true nonvolatile storage without write latency or wear leveling. Its control logic supports both CE-initiated and WE-initiated read/write cycles, with page mode addressing via A1–A0 for sub-30-ns cycle times within the same row.
It features dual byte enable (UB/LB) for 128 K × 8 reconfiguration, sleep mode activation via ZZ pin (3 µA typical), and SRAM-equivalent timing - including tAA = 60 ns, tRC = 90 ns, and no data polling requirement - making it functionally transparent in existing SRAM-based address/data/control buses.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory density | 1 Mbit (64 K × 16), configurable as 128 K × 8 using UB/LB controls |
| Access time | 60 ns - enables direct replacement of 70-ns SRAMs without timing redesign |
| Write endurance | 1014 cycles - supports >100 million writes/day for 27 years in continuous logging |
| Data retention | 151 years at +85 °C - exceeds industrial lifetime requirements without battery backup |
| Supply voltage | 2.0 V to 3.6 V - compatible with 2.5 V and 3.3 V system rails |
| Operating temperature | −40 °C to +85 °C - qualified for uncontrolled industrial environments |
| Active current | 7 mA (typ) - matches SRAM power profile during burst access |
Pinout & Package
FM28V102A-TG is housed in a 44-pin thin small outline package (TSOP-II, 400-mil width), surface-mount compatible with standard reflow profiles and IPC-7351 land patterns.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A15–A0 | Address inputs | 16-bit address bus latched on CE falling edge; A1–A0 enable page mode column access |
| DQ15–DQ0 | Data I/O lines | 16-bit bidirectional bus; driven only when OE LOW and corresponding UB/LB asserted |
| WE | Write enable | Rising edge triggers immediate nonvolatile write; falling edge latches new column address in page mode |
| CE | Chip enable | Falling edge latches full address and initiates read/write; may remain LOW for SRAM-like continuous access |
| OE | Output enable | Controls DQ bus drive; HI-Z when HIGH, eliminating bus contention and supply transients |
| UB / LB | Byte select | Enable DQ15–DQ8 (UB) or DQ7–DQ0 (LB); support 128 K × 8 configuration or independent byte writes |
| ZZ | Sleep mode | LOW activates 3 µA sleep mode; must be HIGH before any access; tied to VDD if unused |
| VDD / VSS | Power / ground | Single 2.0–3.6 V supply; decoupling required per AC switching specs (tRC = 90 ns) |
Key Features
| Feature | Design Value |
|---|---|
| NoDelay™ write architecture | Writes complete in single bus cycle with no latency, eliminating EEPROM-style polling or SRAM battery management |
| SRAM pinout and timing compatibility | Industry-standard 64 K × 16 parallel interface allows drop-in replacement without PCB or firmware changes |
| Page mode operation | 30-ns cycle time within same row using A1–A0, enabling high-throughput sequential logging |
| Monolithic nonvolatility | Eliminates external battery, capacitor, or controller - reduces BOM count and field failure modes |
| Industrial-grade reliability | Qualified to −40 °C to +85 °C with RoHS-compliant TSOP-II package and 1014 endurance |
Applications
| Smart Electricity Metering | Industrial PLC Data Logging |
|---|---|
|
Use Scenario: Storing tariff rates, consumption timestamps, and tamper events in utility meters with daily firmware updates and hourly billing cycles. IC Role / Device Role / Timing Role: Nonvolatile scratchpad memory capturing time-stamped energy pulses and configuration changes without write delay or wear degradation. Use Value: Guarantees 1014 writes over 20+ years - far exceeding meter lifetime - while eliminating battery leakage and cold-temperature failure risks. |
Use Scenario: Recording sensor faults, motion-triggered alarms, and operational state transitions in factory automation controllers. IC Role / Device Role / Timing Role: High-speed, deterministic nonvolatile buffer for real-time event capture synchronized to PLC scan cycles. Use Value: 60-ns access and NoDelay writes ensure zero-cycle latency between fault detection and persistent storage - critical for ISO 13849 safety-critical logs. |
| Medical Infusion Pump Event History | Automotive Telematics Black Box |
|
Use Scenario: Archiving dose delivery records, occlusion alerts, and calibration events in Class II infusion devices subject to FDA 21 CFR Part 11 audit trails. IC Role / Device Role / Timing Role: Tamper-resistant, timestamped nonvolatile memory storing cryptographically signed log entries on every motor command. Use Value: 151-year data retention at +85 °C ensures integrity across device shelf life and field service intervals without periodic refresh or backup power. |
Use Scenario: Capturing CAN bus diagnostics, GPS coordinates, and crash-triggered vehicle state snapshots in ADAS black box modules. IC Role / Device Role / Timing Role: Low-power, shock-immune nonvolatile buffer that survives ignition cycling and vibration-induced power loss. Use Value: Monolithic construction and 3 µA sleep current enable always-on logging without draining backup capacitors during extended parking periods. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar nonvolatile parallel memory applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY14B101P-BA25XI | Same F-RAM technology, but 1-Mbit ×8 organization; requires bus-width redesign | Lacks native 16-bit DQ interface; not pin-compatible; needs UB/LB logic removal | Select only when system uses 8-bit data path and board layout permits trace reroute |
| IS61LV51216AL-10TLI | Battery-backed SRAM; 10 ns faster access but limited to 106 write cycles and battery dependency | Requires external lithium coin cell, temperature derating, and end-of-life battery replacement planning | Choose only for legacy designs already committed to BBSRAM infrastructure and low-write-frequency use cases |
Compared with CY14B101P-BA25XI and IS61LV51216AL-10TLI, FM28V102A-TG uniquely delivers 16-bit SRAM pinout compatibility, 1014 endurance, and monolithic nonvolatility - eliminating both bus redesign and battery management overhead in new industrial designs.
Availability
FM28V102A-TG is available at Aetrix Electronics and suitable for smart metering, industrial PLC data logging, and medical device event history recording requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant TSOP packaging.
Supply support for FM28V102A-TG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Cypress Semiconductor (now part of Infineon Technologies) designs high-reliability nonvolatile memory and microcontroller solutions for industrial, automotive, and IoT applications, with global manufacturing and qualification standards.
The FM28V102A-TG belongs to Cypress's F-RAM product line, engineered specifically to replace battery-backed SRAM and serial EEPROM in systems demanding frequent, deterministic, and maintenance-free nonvolatile storage.
FAQ
Is FM28V102A-TG a direct pin-for-pin replacement for standard 64 K × 16 SRAMs?
Yes - it uses identical 44-pin TSOP-II footprint and industry-standard control signals (CE, WE, OE, UB, LB). Address and data timing align with 70-ns SRAMs, and CE may remain LOW indefinitely like an SRAM. No PCB redesign or glue logic is needed for migration.
Does FM28V102A-TG require special write sequencing or command protocols?
No - it operates as a true parallel memory with no instruction set or command decoding. Writes occur on the rising edge of WE (or falling edge of CE in CE-controlled mode), with data stored immediately and nonvolatily. No polling, delays, or erase cycles are required.
How does the ZZ (sleep) pin affect system power-up sequence?
ZZ must be held HIGH during power-up and remain HIGH until VDD stabilizes above 2.0 V. If pulled LOW prematurely, the device enters sleep mode and ignores CE/WE/OE until ZZ returns HIGH and tZZEX (100 ns max) elapses. Tie ZZ to VDD via 10-kΩ resistor if unused.
Can FM28V102A-TG be used in 128 K × 8 configurations?
Yes - by asserting UB and LB independently and wiring DQ15–DQ8 and DQ7–DQ0 to separate 8-bit buses, the device maps to 128 K × 8. Address A0 becomes the LSB, and A1–A16 form the full 17-bit address. System logic must manage byte-enable timing per the datasheet truth table.
FM28V102A-TG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- F-RAM™
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Non-Volatile
- Memory Format:
- FRAM
- Technology:
- FRAM (Ferroelectric RAM)
- Memory Size:
- 1Mbit
- Memory Organization:
- 64K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 90ns
- Access Time:
- 90 ns
- Voltage - Supply:
- 2V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
FM28V102A-TG FAQ
1.How can I place an order for FM28V102A-TG through Aetrix?
Please submit a Request for Quotation (RFQ) for FM28V102A-TG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FM28V102A-TG reliable?
The price and inventory of FM28V102A-TG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FM28V102A-TG is usually 5 days.
3.What payment methods are accepted for FM28V102A-TG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FM28V102A-TG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FM28V102A-TG?
FM28V102A-TG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FM28V102A-TG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FM28V102A-TG?
For technical support, including FM28V102A-TG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FM28V102A-TG requirements.
6.How does Aetrix verify that FM28V102A-TG is sourced from the original manufacturer or authorized distributors?
All FM28V102A-TG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FM28V102A-TG meets industry standards.
7.What is the process for return or replacement of FM28V102A-TG?
All FM28V102A-TG units undergo pre-shipment inspection (PSI). If there is an issue with FM28V102A-TG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FM28V102A-TG part is unused and in its original packaging.
Return procedure for FM28V102A-TG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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