Infineon Technologies FM28V102A-TGTR

Overview

FM28V102A-TGTR from Cypress Semiconductor is a 1-Mbit (64 K × 16) ferroelectric RAM (F-RAM) with nonvolatile data retention, SRAM-compatible parallel interface, 60-ns access time, 10¹⁴ read/write endurance, and industrial temperature range (–40 °C to +85 °C). It serves as a direct replacement for battery-backed SRAM in real-time data logging systems requiring rapid, reliable writes without delay.

For engineers reviewing the FM28V102A-TGTR datasheet, FM28V102A-TGTR pinout, FM28V102A-TGTR application, or FM28V102A-TGTR equivalent, key selection criteria include NoDelay™ write capability, byte-selectable 16-bit bus operation, TSOP-II package compatibility, and elimination of battery management overhead in embedded control and telemetry designs.

Technical Context

The FM28V102A-TGTR implements a parallel-access F-RAM core using a ferroelectric capacitor-based storage cell, enabling true nonvolatility with zero write latency and no wear leveling. Its architecture supports both CE-initiated and WE-initiated read/write cycles, with address latching on CE falling edge and write completion synchronized to WE rising edge.

It features configurable 64 K × 16 or 128 K × 8 organization via UB/LB controls, page mode addressing across four column locations per row (A1–A0), and automatic pre-charge triggered by upper address (A15–A2) change or CE deassertion - all maintaining SRAM-like timing behavior without internal write buffers or command sequences.

Key Specifications

Pinout & Package

FM28V102A-TGTR is housed in a 44-pin thin small outline package (TSOP-II, 400-mil width), surface-mount compatible with standard reflow profiles and IPC-7351B land patterns.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar nonvolatile parallel memory applications.

Compared with CY14V101L-ZSP25XIT and FM24V102A-TGTR, the FM28V102A-TGTR offers optimal balance of TSOP-II footprint, industrial temperature support, and proven field reliability - making it preferred for cost-sensitive, high-volume embedded systems where 60-ns access suffices and surface-mount density is critical.

Availability

FM28V102A-TGTR is available at Aetrix Electronics and suitable for smart meter data logging, industrial PLC event buffering, and medical infusion pump history storage requiring stable component supply and long-term lifecycle assurance.

Supply support for FM28V102A-TGTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Cypress Semiconductor (now part of Infineon Technologies) is a global leader in high-performance mixed-signal ICs, specializing in memory, PSoC programmable systems, and USB/USB-C solutions.

The FM28V102A belongs to Cypress's F-RAM product line, engineered specifically to replace battery-backed SRAM in mission-critical, high-write-cycle applications where data integrity and zero-latency persistence are mandatory.

FAQ

Is FM28V102A-TGTR truly a drop-in replacement for standard SRAMs?

Yes - it uses an industry-standard 64 K × 16 parallel interface with identical pinout, timing behavior, and control signal logic (CE, WE, OE, UB/LB). No address decoding changes, wait-state insertion, or firmware modifications are required. The device supports CE-grounded operation like SRAM and delivers deterministic 60-ns access without hidden delays or command protocols.

How does NoDelay™ write differ from conventional nonvolatile memory write methods?

NoDelay™ means write data is stored permanently in ferroelectric cells within the same bus cycle as the write command - no internal erase-before-write, no polling, no timeout handling. Unlike EEPROM or Flash, there is zero latency between WE rising edge and data persistence; the memory array updates atomically and immediately, enabling real-time capture of transient events without software overhead.

What happens if ZZ (Sleep) is asserted during an active read or write cycle?

The FM28V102A requires all read/write operations to complete before ZZ is driven LOW. If ZZ goes LOW mid-cycle, the device ignores subsequent control signals until ZZ returns HIGH and tZZEX (exit delay, max 1 µs) elapses. Data corruption does not occur, but the incomplete access is abandoned - design must ensure ZZ assertion only occurs after CE, WE, and OE are deasserted and bus activity ceases.

Can FM28V102A-TGTR be used in 128 K × 8 configurations, and how is this implemented?

Yes - by asserting UB and LB independently and wiring DQ15–DQ8 and DQ7–DQ0 to separate 8-bit data buses, the device maps to 128 K × 8. Address A0 selects lower/upper byte within each 16-bit word, and A1–A15 become the effective 17-bit address. This configuration requires external byte-enable logic but retains full 10¹⁴ endurance and 151-year retention across both halves.