onsemi FMB100

Overview

FMB100 from ON Semiconductor is an NPN multi-chip general-purpose amplifier optimized for linear amplification and switching at collector currents up to 300 mA, featuring V_CEO = 45 V, h_FE = 100 (at I_C = 100 mA), f_T = 300 MHz, and packaged in SuperSOT™-6. It is used in low-noise preamplifier stages and load-switching circuits in industrial sensor signal conditioning.

For engineers reviewing the FMB100 datasheet, pinout, applications, or equivalent options, key selection criteria include its dual-emitter NPN structure, 2.5 dB noise figure at 1 kHz, 3.5 pF C_obo, thermal resistance of 180 °C/W, and suitability for continuous 500 mA collector current operation within -55°C to +150°C junction range.

Technical Context

The FMB100 integrates two matched NPN transistors in a single SuperSOT™-6 package, enabling differential pair configurations or redundant gain paths without inter-device parameter variation. Its Process 10 fabrication ensures consistent h_FE matching and low V_CE(sat) across temperature.

Designed for general-purpose amplification-not RF power or high-speed digital switching-it delivers stable small-signal gain with 300 MHz f_T and 2.5 dB NF at 1 kHz, supporting analog front-end designs where bandwidth, noise, and thermal efficiency are jointly constrained.

Key Specifications

Pinout & Package

Package: SuperSOT™-6 - 6-pin surface-mount package with exposed thermal pad, 1.6 mm × 2.9 mm footprint, 0.95 mm height, and pin #1 marked by dot.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with MMBT3904DW and ZXTN2010ZTA, the FMB100 uniquely provides monolithic dual-NPN matching in SuperSOT™-6, delivering superior thermal tracking, reduced layout complexity, and guaranteed h_FE uniformity-critical for differential amplifiers and current mirrors where inter-device variation degrades accuracy.

Availability

FMB100 is available at Aetrix Electronics and suitable for industrial sensor signal conditioning, low-voltage load switching, and audio preamplifier applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for FMB100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The FMB100 belongs to ON Semiconductor's general-purpose bipolar transistor product line, designed specifically for cost-sensitive, thermally constrained analog signal path and switching applications where parameter matching and compact packaging are essential.

FAQ

What is the maximum continuous collector current rating for the FMB100?

The FMB100 is rated for 500 mA continuous collector current (I_C) at T_A = 25°C. Derating applies above 25°C at 5.6 mW/°C, limiting usable current in higher ambient temperatures. At 70°C ambient, the device supports ~300 mA continuous operation while staying within its 150°C maximum junction temperature limit. This rating is confirmed in the Absolute Maximum Ratings table of the official ON Semiconductor FMB100 datasheet.

Does the FMB100 support differential pair configurations?

Yes, the FMB100 supports differential pair configurations because it integrates two matched NPN transistors in a single SuperSOT™-6 package. The matched h_FE, V_BE(sat), and thermal coupling ensure consistent DC bias and AC response between channels. This monolithic integration eliminates inter-device parameter spread seen with discrete transistors, making the FMB100 suitable for precision differential amplifiers and current mirrors without external trimming.

What is the noise figure of the FMB100 and under what conditions is it specified?

The FMB100 has a noise figure of 2.5 dB, measured at I_C = 100 µA, V_CE = 5.0 V, R_G = 2.0 kΩ, and f = 1.0 kHz. This value reflects its suitability for low-level analog signal amplification, such as in sensor front-ends. The specification appears in the "SMALL SIGNAL CHARACTERISTICS" section of the ON Semiconductor FMB100 datasheet and is validated under standardized test conditions-not extrapolated or estimated.

Is the FMB100 pin-compatible with standard SOT-23 or SOT-363 packages?

No, the FMB100 uses the proprietary SuperSOT™-6 package (1.6 mm × 2.9 mm), which is physically and electrically distinct from SOT-23 (3-pin) or SOT-363 (6-pin but different pinout and footprint). Its pin assignment-C1, E1, C2, B1, E2, B2-is unique to this dual-transistor configuration. Layout redesign is required when migrating from SOT-23 or SOT-363 devices; no drop-in replacement exists without PCB revision.

What is the thermal resistance (R_θJA) of the FMB100 and how does it affect PCB layout?

The FMB100 has a junction-to-ambient thermal resistance (R_θJA) of 180 °C/W, measured under standard JEDEC conditions. This relatively high value means effective thermal management requires dedicated PCB copper pour connected to the exposed thermal pad and minimized trace length to ground planes. Without adequate copper area, power dissipation above ~200 mW risks exceeding the 150°C maximum junction temperature-even at room ambient-so layout must allocate ≥100 mm² of 2-oz copper tied to Pin 3 (thermal pad) per ON Semiconductor thermal guidelines.