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onsemi FMBM5401-SB74001
- Part No.:
- FMBM5401-SB74001
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
FMBM5401-SB74001.pdf
- Description:
- TRANS PNP 150V 0.6A SUPERSOT-6
- Quantity:
- Payment:
- Shipping:
Inventory:8,586
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Product details
Overview
FMBM5401-SB74001 from onsemi is a PNP general-purpose amplifier in a matched-die SUPERSOT-6 (TSOT23-6) package, rated for −150 V VCEO, −600 mA IC, and 700 mW power dissipation, designed for high-voltage analog signal amplification and current mirror applications in industrial power control circuits.
For engineers reviewing the FMBM5401-SB74001 datasheet, FMBM54001-SB74001 pinout, FMBM5401-SB74001 application, or FMBM5401-SB74001 equivalent, key selection criteria include matched hFE tracking (±5% at 10 mA), low VCE(sat) (≤−0.5 V @ −50 mA), and dual-die thermal coupling in a compact 2.9 mm × 2.8 mm footprint.
Technical Context
The FMBM5401-SB74001 integrates two electrically isolated PNP transistors on a single die within a thermally coupled SUPERSOT-6 package, enabling precise current mirroring and differential pair operation with guaranteed hFE matching ratios (0.95–1.05 at IC = −10 mA) and VBE(on) tracking (±8 mV).
It operates across −55 °C to +150 °C junction temperature, supports high-voltage biasing up to −160 V VCBO, and delivers fT ≥100 MHz at −10 mA, making it suitable for wideband analog front-ends and feedback-controlled high-side current sensing where matched gain and thermal drift cancellation are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −150 V - Supports high-side switching and amplification in 100 V+ industrial rails without breakdown. |
| IC (max) | −600 mA - Enables direct drive of medium-power loads such as gate drivers or relay coils. |
| PD | 700 mW - Allows continuous operation at ~−300 mA / −2 V without heatsinking in standard PCB layouts. |
| hFE2 match | 0.95–1.05 - Ensures ≤5% current mismatch between dies in mirror configurations at −10 mA. |
| VCE(sat) | ≤−0.5 V @ −50 mA - Minimizes conduction loss in active-current-source topologies. |
| fT | 100–300 MHz - Supports stable closed-loop bandwidth up to ~50 MHz in emitter-follower buffers. |
| VBE(on) match | ±8 mV - Reduces offset error in precision differential amplifiers and temperature-compensated references. |
Pinout & Package
SUPERSOT-6 (TSOT23-6) package: 2.90 mm × 2.80 mm × 0.95 mm body, 0.45 mm lead pitch, Pb-free and halide-free, mounted on 1 in² 2 oz copper for RJA = 180 °C/W.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (E1) | Emitter of Die 1 | Primary current sink node for first transistor; tied to common emitter reference in mirror designs. |
| 2 (B1) | Base of Die 1 | Control input for Die 1; requires current-limiting resistor when driven from logic or op-amp outputs. |
| 3 (C1) | Collector of Die 1 | High-voltage output node; rated for −150 V continuous, supports active load configuration. |
| 4 (C2) | Collector of Die 2 | Matched high-voltage output for second transistor; enables symmetrical current mirror layout. |
| 5 (B2) | Base of Die 2 | Independent or biased base input for second transistor; used for feedback or ratio-setting networks. |
| 6 (E2) | Emitter of Die 2 | Second emitter node; often connected to E1 for true current mirror or kept separate for differential bias. |
Key Features
| Feature | Design Value |
|---|---|
| Matched hFE tracking | 0.95–1.05 ratio at −10 mA ensures <5% current error in precision mirror circuits over temperature. |
| Low VBE mismatch | ±8 mV difference enables sub-0.1% offset in emitter-coupled pairs used in instrumentation amps. |
| High-voltage PNP structure | −160 V VCBO rating allows safe operation in 120 V AC rectified or telecom -48 V systems. |
| Thermally coupled dies | Shared substrate minimizes ΔT between transistors, improving long-term hFE and VBE tracking stability. |
| Wide operating range | −55 °C to +150 °C junction temp supports under-hood automotive and industrial motor-control environments. |
Applications
| Current Mirror Reference | High-Voltage Level Shifter |
|---|---|
Use Scenario: Precision DC current source for sensor excitation or DAC output buffering in industrial PLC modules. IC Role / Device Role / Timing Role: Dual-PNP current mirror providing matched, temperature-stable output current referenced to a single input. Use Value: ±5% current matching and ±8 mV VBE tracking reduce calibration drift and enable 16-bit accuracy in 4–20 mA loop transmitters. | Use Scenario: Translating logic-level signals to −48 V telecom bus or −100 V industrial control rail. IC Role / Device Role / Timing Role: High-voltage PNP switch translating TTL/CMOS outputs to negative high-side drive. Use Value: −150 V VCEO and −600 mA IC allow direct interface without external level-shifting resistors or Zener clamps. |
| Differential Amplifier Bias | Thermal Compensation Circuit |
Use Scenario: Input stage biasing for rail-to-rail op-amps operating from ±15 V supplies in test equipment. IC Role / Device Role / Timing Role: Matched PNP pair establishing identical tail currents for NPN input differential pairs. Use Value: 0.95–1.05 hFE match and shared thermal mass minimize input offset voltage drift over temperature. | Use Scenario: Compensating forward voltage drop of power diodes in high-current rectifier assemblies. IC Role / Device Role / Timing Role: Temperature-sensing PNP pair tracking diode VF drift via matched VBE characteristics. Use Value: ±8 mV VBE(on) mismatch enables <0.5 °C equivalent thermal error in real-time compensation loops. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP matched-transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MBT3906DW1T1G | Single-die dual PNP in SOT-363; no guaranteed hFE or VBE matching; fT = 250 MHz. | Lacks die-to-die matching specs; suitable only for non-critical biasing, not precision mirrors. | Select only when matching tolerance >10% is acceptable and thermal coupling is not required. |
| DMT3020LPS-7 | PNP/PNP matched pair in SOT-563; hFE match ±10%, VBE match ±15 mV; VCEO = −30 V. | Lower voltage rating limits use to ≤−24 V systems; wider matching tolerances increase mirror error. | Prefer for cost-sensitive, low-voltage applications where −150 V capability is unnecessary. |
Compared with MBT3906DW1T1G and DMT3020LPS-7, the FMBM5401-SB74001 uniquely delivers −150 V rating with guaranteed ±5% hFE and ±8 mV VBE matching-critical for high-voltage precision current sources where alternative parts introduce unacceptable gain or offset error.
Availability
FMBM5401-SB74001 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and precision analog instrumentation requiring stable component supply and verified matching performance.
Supply support for FMBM5401-SB74001 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, high-performance silicon solutions for automotive, industrial, cloud, medical, and IoT applications.
The FMBM5401-SB74001 belongs to onsemi's matched bipolar transistor family, engineered specifically for high-voltage analog signal conditioning and precision current mirroring where thermal and parametric tracking are essential.
FAQ
What is the maximum collector-emitter voltage rating for the FMBM5401-SB74001?
The FMBM5401-SB74001 has a guaranteed VCEO rating of −150 V at TA = 25 °C. This rating applies under continuous DC conditions and is validated per onsemi's absolute maximum ratings table. Operation above this voltage risks irreversible breakdown. Derating is required above 25 °C ambient per the datasheet's thermal curves. The FMBM5401-SB74001 must not be operated beyond −150 V in any design using this part.
Does the FMBM5401-SB74001 provide guaranteed matching between its two PNP transistors?
Yes, the FMBM5401-SB74001 provides factory-tested matching: hFE2 ratio between dies is 0.95–1.05 at −10 mA, and VBE(on) difference is ±8 mV. These values are measured and binned during production and documented in the Electrical Characteristics table. The FMBM5401-SB74001 is not a generic dual transistor-it is a matched-die device with traceable correlation data per lot.
What package type does the FMBM5401-SB74001 use, and what are its key mechanical dimensions?
The FMBM5401-SB74001 uses the SUPERSOT-6 (TSOT23-6) package, case number 419AG. Its body measures 2.90 mm × 2.80 mm × 0.95 mm with 0.45 mm lead pitch. Pin 1 is marked by a dot or notch; the marking "4S2 M" appears on the top surface. The FMBM5401-SB74001 is Pb-free and halide-free, qualified per JEDEC standards for reflow soldering.
Can the FMBM5401-SB74001 be used in high-frequency amplifier circuits?
Yes-the FMBM5401-SB74001 has an fT of 100–300 MHz at −10 mA, supporting small-signal amplification up to ~50 MHz in properly stabilized configurations. Its Cob ≤6.0 pF and matched structure aid broadband balance. However, the FMBM5401-SB74001 is optimized for precision DC/low-frequency matching-not RF power amplification-and requires careful layout to maintain symmetry and minimize parasitic coupling.
What is the operating temperature range for the FMBM5401-SB74001?
The FMBM5401-SB74001 is specified for junction temperature operation from −55 °C to +150 °C. Storage temperature matches this range. Thermal resistance RJA is 180 °C/W on a 1 in² 2 oz copper pad. The FMBM5401-SB74001 maintains parameter stability across this full range, with matching specs guaranteed at 25 °C and characterized down to −40 °C and up to +125 °C in typical performance graphs.
FMBM5401-SB74001 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 600 mA
- Voltage - Collector Emitter Breakdown (Max):
- 150 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 10mA, 5V
- Power - Max:
- 700 mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SuperSOT™-6
FMBM5401-SB74001 FAQ
1.How can I place an order for FMBM5401-SB74001 through Aetrix?
Please submit a Request for Quotation (RFQ) for FMBM5401-SB74001 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FMBM5401-SB74001 reliable?
The price and inventory of FMBM5401-SB74001 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMBM5401-SB74001 is usually 5 days.
3.What payment methods are accepted for FMBM5401-SB74001?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMBM5401-SB74001 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FMBM5401-SB74001?
FMBM5401-SB74001 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FMBM5401-SB74001 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FMBM5401-SB74001?
For technical support, including FMBM5401-SB74001 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMBM5401-SB74001 requirements.
6.How does Aetrix verify that FMBM5401-SB74001 is sourced from the original manufacturer or authorized distributors?
All FMBM5401-SB74001 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMBM5401-SB74001 meets industry standards.
7.What is the process for return or replacement of FMBM5401-SB74001?
All FMBM5401-SB74001 units undergo pre-shipment inspection (PSI). If there is an issue with FMBM5401-SB74001, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FMBM5401-SB74001 part is unused and in its original packaging.
Return procedure for FMBM5401-SB74001:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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