onsemi FMBS2383

Overview

FMBS2383 from ON Semiconductor is an NPN epitaxial silicon transistor designed for medium-power amplifier and switching applications, featuring V_CEO = 160 V, I_C = 800 mA, f_T = 120 MHz, and P_D = 630 mW in a SuperSOT™-6 package. It delivers high-voltage gain stability in audio preamplifier stages and relay driver circuits.

For engineers reviewing the FMBS2383 datasheet, pinout, applications, or equivalent options, key selection criteria include its 160 V breakdown rating, 120 MHz f_T, low 1.0 V V_CE(sat) at 500 mA, thermal resistance of 200 °C/W, and SuperSOT™-6 footprint compatibility with space-constrained PCB layouts.

Technical Context

This NPN transistor uses epitaxial base construction to support high-speed switching and linear amplification. Its 160 V V_CEO and V_CBO ratings enable operation in 120 V DC supply rails, while the 120 MHz f_T supports RF predriver and broadband audio signal paths up to ~10 MHz.

The device exhibits h_FE = 80–160 at V_CE = 5 V and I_C = 100 mA, with V_BE(on) = 1.0 V at I_C = 500 mA, enabling predictable base drive design. Cob = 30 pF at V_CB = 10 V ensures minimal Miller effect in common-emitter configurations.

Key Specifications

Pinout & Package

FMBS2383 is housed in the SuperSOT™-6 surface-mount package (3.05 × 1.40 × 0.95 mm), optimized for thermal performance and board density. Pin numbering follows standard SuperSOT™-6 orientation with pin 1 at top-left when marking side faces up.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN transistor applications.

Compared with MMDT3904-7-F and ZXTN25012E6TA, FMBS2383 uniquely balances 160 V breakdown, 120 MHz bandwidth, and 630 mW power in SuperSOT™-6-making it the only option among the three for medium-voltage, medium-power linear and switching tasks where both voltage headroom and frequency response matter.

Availability

FMBS2383 is available at Aetrix Electronics and suitable for industrial control systems, audio signal conditioning modules, and DC power interface circuits requiring stable component supply and long-term obsolescence management.

Supply support for FMBS2383 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global supplier of energy-efficient semiconductor components for automotive, industrial, cloud computing, and IoT applications.

The FMBS2383 belongs to ON Semiconductor's legacy high-voltage NPN transistor product line, engineered for robustness in industrial interface and medium-power analog signal path applications.

FAQ

What is the maximum collector-emitter voltage rating for FMBS2383?

The FMBS2383 has a guaranteed minimum collector-emitter breakdown voltage (BV_CEO) of 160 V at I_C = 10 mA and I_B = 0. This rating is confirmed in the Absolute Maximum Ratings table and Electrical Characteristics section of the official FMBS2383 datasheet Rev. A0. Operation above this voltage risks irreversible avalanche failure.

Does FMBS2383 support switching applications at 100 kHz?

Yes, FMBS2383 supports switching applications up to at least 100 kHz due to its 120 MHz current gain bandwidth product (f_T) and low 30 pF output capacitance (C_ob). Measured V_CE(sat) = 1.0 V at 500 mA confirms efficient conduction, and its SuperSOT™-6 package provides adequate thermal response for repetitive 100 kHz PWM with appropriate PCB layout.

What is the thermal resistance junction-to-ambient for FMBS2383?

The FMBS2383 has a specified thermal resistance junction-to-ambient (R_θJA) of 200 °C/W under standard test conditions (minimum land pattern per datasheet note 1). This value assumes FR-4 PCB with no additional copper pour; adding 25 mm² of 1 oz copper on the collector pads reduces effective R_θJA by ~30%, improving safe operating area for continuous 630 mW dissipation.

Is FMBS2383 pin-compatible with standard SOT-23 transistors?

No, FMBS2383 uses the SuperSOT™-6 package (6-pin), not the 3-pin SOT-23. Its pinout includes three collector terminals (Pins 3, 5, 6) and two emitter terminals (Pins 1, 4), requiring a dedicated footprint. Substituting FMBS2383 into a SOT-23 layout will result in incorrect connections and functional failure.

What is the DC current gain range of FMBS2383 at typical operating conditions?

The FMBS2383 exhibits a DC current gain (h_FE) ranging from 80 to 160 when measured at V_CE = 5 V and I_C = 100 mA, as specified in the Electrical Characteristics table. This range is validated across production lots and applies to ambient temperatures from 25 °C to 125 °C, with typical gain decreasing gradually above 75 °C.