Diodes Incorporated FMMT2907ATA

Overview

FMMT2907ATA from Diodes Incorporated is a PNP silicon planar switching transistor in SOT-23 package, rated for V_CEO = −60 V, I_C = −600 mA, P_tot = 330 mW, with h_FE = 75–100 at I_C = −10 mA and f_T = 200 MHz - used in low-voltage DC-DC converter bias circuits and discrete logic-level signal inversion stages.

For engineers reviewing the FMMT2907ATA datasheet, FMMT2907ATA pinout, FMMT2907ATA application, or FMMT2907ATA equivalent, key selection criteria include guaranteed V_CEO rating, pulsed switching performance (t_on/t_off ≤ 50/110 ns), SOT-23 thermal derating behavior, and h_FE consistency across −0.1 mA to −500 mA operating range.

Technical Context

This PNP bipolar junction transistor operates in active or saturation mode for discrete switching control, with verified breakdown margins: V_(BR)CBO = −60 V, V_(BR)CEO = −60 V, and V_(BR)EBO = −5 V. Its f_T = 200 MHz confirms suitability for high-speed digital edge control up to ~100 MHz clock domains.

Switching timing is characterized under pulsed conditions (300 µs width, ≤2% duty cycle), delivering t_on = 26 ns (typ) and t_off = 70 ns (typ) at I_C = −150 mA, with C_obo = 8 pF and C_ibo = 30 pF enabling predictable RC-limited gate drive interaction in emitter-follower configurations.

Key Specifications

Pinout & Package

SOT-23 surface-mount plastic package with gull-wing leads; 3-terminal configuration optimized for automated placement and reflow soldering on space-constrained PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching transistor applications.

Compared with MMBT2907A and DXT2907AP5-13, FMMT2907ATA offers tighter h_FE binning (75–100), lower t_off max (110 ns vs. 100 ns), and single-device SOT-23 footprint - making it optimal for timing-critical, volume-manufactured discrete switches where parametric consistency matters.

Availability

FMMT2907ATA is available at Aetrix Electronics and suitable for motor driver stages, power sequencing control, digital logic interface, and current-sense amplifier bias requiring stable component supply and consistent parametric performance across production lots.

Supply support for FMMT2907ATA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices for industrial, computing, consumer, and communications markets.

FMMT2907ATA belongs to the FMMT series of high-speed, high-voltage PNP/NPN switching transistors designed specifically for compact, thermally efficient discrete power control in space-constrained embedded systems.

FAQ

What is the maximum continuous collector current for FMMT2907ATA at 70°C ambient?

At T_amb = 70°C, the maximum continuous collector current is −420 mA. This is derived from the 330 mW power dissipation limit and the thermal resistance R_θJA ≈ 375°C/W for SOT-23 on standard FR-4, resulting in linear derating from −600 mA at 25°C to zero at 125°C junction temperature.

Does FMMT2907ATA support pulsed operation beyond its DC ratings?

Yes - the datasheet specifies pulsed test conditions (300 µs width, ≤2% duty cycle) for t_on/t_off, V_CE(sat), and h_FE measurements. Under these conditions, peak I_C can reach −500 mA while maintaining V_CE(sat) ≤ −0.4 V and avoiding secondary breakdown.

How does the FMMT2907ATA part marking "2F" relate to device specifications?

The "2F" top-side marking identifies the FMMT2907A variant per Diodes Incorporated's part-marking scheme. It confirms the −60 V V_CEO rating, tighter h_FE bin (75–100), and improved t_off performance versus the base FMMT2907 ("2BZ"), and is laser-etched for traceability in automated assembly.

Can FMMT2907ATA be used in linear amplification applications?

No - it is characterized and qualified exclusively for switching operation. The datasheet provides no linearity data (e.g., distortion, THD, or small-signal parameters beyond f_T), and its h_FE variation across I_C and V_CE is not specified for analog gain stability, making it unsuitable for Class-A or AB amplifier stages.