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Diodes Incorporated FMMT411FDBWQ-7

Part No.:
FMMT411FDBWQ-7
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
3-UDFN Exposed Pad
Datasheet:
AetrixFMMT411FDBWQ-7.pdf
Description:
TRANS NPN 15V 5A W-DFN2020-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,603

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Product details

Overview

FMMT411FDBWQ-7 from Diodes Incorporated is an AEC-Q101 qualified NPN bipolar junction transistor engineered for low-voltage avalanche-mode operation in pulsed power applications. It delivers 35A typical single-pulse current (IUSB), supports 80V collector-base breakdown (BVCBO), and features a 15V collector-emitter breakdown (BVCEO), enabling fast-edge pulse generation in automotive LIDAR and radar transmitters.

For engineers reviewing the FMMT411FDBWQ-7 datasheet, FMMT411FDBWQ-7 pinout, FMMT411FDBWQ-7 application, or FMMT411FDBWQ-7 equivalent, key selection criteria include avalanche energy handling, thermal resistance (RθJC = 12°C/W under 25mm² copper), wettable flank compatibility for AOI inspection, and AEC-Q101 qualification for automotive pulse circuits.

Technical Context

This transistor operates in controlled avalanche mode-not saturation or linear amplification-where high dI/dt pulses are generated by rapid energy discharge across a pre-charged capacitor into the collector-emitter path. Its design prioritizes minimal parasitic inductance via low-profile DFN2020-3 packaging and optimized internal layout.

It requires precise external circuit control: base drive must initiate avalanche, while collector circuit inductance and capacitance (e.g., 470pF CCE) directly determine pulse height and edge speed. Thermal derating is critical-junction temperature must remain ≤150°C during repetitive pulsing, with RθJA dropping from 154°C/W to 67°C/W when mounted on 25mm² copper.

Key Specifications

Parameter Value and Actual Design Meaning
BVCBO 80 V minimum - ensures safe operation with 75V applied collector-base voltage before avalanche onset
BVCEO 15 V minimum - defines maximum sustainable collector-emitter voltage in active avalanche conduction
IUSB 35 A typical - peak single-pulse current capability at VCE = 70V and CCE = 470pF
fT 110 MHz typical - indicates high-frequency gain bandwidth, supporting fast switching transitions
RθJC 12 °C/W - enables efficient heat transfer from junction to case when mounted on 25mm² copper pad
VCE(sat) 100 mV max at IC = 10mA, IB = 1mA - low saturation voltage reduces base drive power loss during turn-on
ESD HBM 4,000 V - robustness against human-body model electrostatic discharge during handling and assembly

Pinout & Package

Package: W-DFN2020-3/SWP (Type A), 2.0 × 2.0 × 0.62 mm, low-profile molded plastic with wettable flanks and matte tin terminals.

Pin/Terminal Circuit Role Design Meaning
1 (Emitter) Current sink terminal in avalanche conduction path Connected to ground reference; carries full pulsed current; thermally coupled to exposed pad
2 (Base) Control input for avalanche initiation Receives short high-current pulse to trigger carrier multiplication; requires low-inductance drive path
3 (Collector) High-energy current source terminal Connected to charged capacitor and load; designed for minimal loop inductance; tied to exposed thermal pad

Key Features

Feature Design Value
Avalanche-optimized process control Tight parameter distribution ensures consistent IUSB and breakdown voltage across production lots for reliable pulse timing
Low-profile 0.62 mm height Enables integration into space-constrained automotive modules such as compact LIDAR transmitter assemblies
Sidewall tin plating Supports automated optical inspection (AOI) of solder joint quality on all three package edges
AEC-Q101 qualification Validated for automotive use including temperature cycling (-55°C to +150°C), humidity, and mechanical shock testing
Lead-free & halogen-free Complies with RoHS 3 and JEDEC MSL Level 1 standards; green molding compound rated UL 94V-0

Applications

LIDAR Transmitter Module Automotive Radar Pulse Generator

Use Scenario: Pulsed laser diode driver in time-of-flight distance measurement systems.

IC Role / Device Role / Timing Role: Avalanche switch delivering nanosecond-scale current pulses to laser diode anode.

Use Value: 35A IUSB and 37ns rise time enable sub-centimeter ranging resolution at 1550nm wavelengths.

Use Scenario: High-speed pulse generator for 77GHz radar front-end modulators.

IC Role / Device Role / Timing Role: Fast-edge switch triggering RF power amplifier gate bias in FMCW chirp sequences.

Use Value: 59ns turn-on time and 110MHz fT support <10ns pulse widths required for ultra-short radar dwell times.

Industrial Pulse Generator Automotive Safety System Tester

Use Scenario: Compact high-voltage pulse source for non-destructive testing equipment.

IC Role / Device Role / Timing Role: Avalanche-mode switch discharging stored energy into test load with controlled edge rate.

Use Value: 80V BVCBO and 12°C/W RθJC allow repeatable 100ns–1µs pulses at 1kHz without thermal runaway.

Use Scenario: On-vehicle diagnostic pulse injector for ADAS sensor validation.

IC Role / Device Role / Timing Role: Field-deployable avalanche switch simulating radar/LIDAR transmit signals during ECU functional tests.

Use Value: AEC-Q101 qualification and -55°C to +150°C operating range ensure reliability in under-hood test environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar avalanche-mode transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
ZXTN2012ZTA Higher BVCEO (20V), lower IUSB (15A), SOT-23 package, no AEC-Q101 qualification Not suitable for automotive LIDAR; limited to industrial pulse generators with relaxed voltage/energy requirements Select only for cost-sensitive non-automotive designs where 15A peak current suffices and AOI inspection is not required
DMBT3725A-7 Same DFN2020-3 package, lower BVCBO (60V), unqualified for automotive, higher VCE(sat) (200mV) Lacks AEC-Q101 and avalanche characterization data; unsuitable for safety-critical pulse timing Consider only for prototyping where exact avalanche behavior is not validated; not recommended for production automotive use

Compared with ZXTN2012ZTA and DMBT3725A-7, the FMMT411FDBWQ-7 uniquely combines AEC-Q101 qualification, 35A IUSB, wettable flanks, and guaranteed 15V BVCEO-making it the only option qualified for production automotive LIDAR pulse drivers requiring traceable reliability and AOI-compatible assembly.

Availability

FMMT411FDBWQ-7 is available at Aetrix Electronics and suitable for automotive LIDAR transmitters, radar pulse generators, and industrial high-speed pulse sources requiring stable component supply, AEC-Q101 compliance, and wettable-flank manufacturability.

Supply support for FMMT411FDBWQ-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The FMMT411FDBWQ belongs to Diodes' automotive-qualified avalanche transistor product line, developed specifically for high-reliability, nanosecond-edge pulse generation in ADAS sensing systems.

FAQ

What is the maximum allowable avalanche energy per pulse for FMMT411FDBWQ-7?

The datasheet does not specify a fixed joule rating, but energy is constrained by IUSB = 35A at VCE = 70V and CCE = 470pF. Using E = ½CV², maximum safe single-pulse energy is approximately 1.16 µJ. Exceeding this risks permanent lattice damage, so external RC network sizing must limit both voltage and charge.

Can FMMT411FDBWQ-7 be used in linear amplifier configurations?

No-it is not characterized or qualified for linear operation. Its structure, doping profile, and thermal design are optimized exclusively for transient avalanche conduction. Using it as an amplifier risks premature second breakdown, inconsistent hFE, and failure under DC bias conditions.

Is the exposed thermal pad electrically isolated or connected internally?

The exposed pad is internally connected to the collector terminal. PCB layout must tie the pad to the collector net and provide adequate copper area (25mm² minimum) for thermal dissipation, as specified in the thermal derating curves for RθJA = 67°C/W.

Does the "411" marking code indicate date code or product variant?

"411" is the product type marking code, not a date code. Date code is separate: "Y" = year (0–9), "W" = week (A–Z or a–z), and "X" = internal revision. Full marking format is "411 Y W X", printed on the top surface of the DFN package.

FMMT411FDBWQ-7 Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
3-UDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Transistor Type:
NPN - Avalanche Mode
Current - Collector (Ic) (Max):
5 A
Voltage - Collector Emitter Breakdown (Max):
15 V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 1mA, 10mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 10V
Power - Max:
820 mW
Frequency - Transition:
110MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
W-DFN2020-3 (Type A)

FMMT411FDBWQ-7 FAQ

1.How can I place an order for FMMT411FDBWQ-7 through Aetrix?

Please submit a Request for Quotation (RFQ) for FMMT411FDBWQ-7 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FMMT411FDBWQ-7 reliable?

The price and inventory of FMMT411FDBWQ-7 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMMT411FDBWQ-7 is usually 5 days.

3.What payment methods are accepted for FMMT411FDBWQ-7?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMMT411FDBWQ-7 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FMMT411FDBWQ-7?

FMMT411FDBWQ-7 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FMMT411FDBWQ-7 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FMMT411FDBWQ-7?

For technical support, including FMMT411FDBWQ-7 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMMT411FDBWQ-7 requirements.

6.How does Aetrix verify that FMMT411FDBWQ-7 is sourced from the original manufacturer or authorized distributors?

All FMMT411FDBWQ-7 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMMT411FDBWQ-7 meets industry standards.

7.What is the process for return or replacement of FMMT411FDBWQ-7?

All FMMT411FDBWQ-7 units undergo pre-shipment inspection (PSI). If there is an issue with FMMT411FDBWQ-7, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FMMT411FDBWQ-7 part is unused and in its original packaging.

Return procedure for FMMT411FDBWQ-7:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

FMMT411FDBWQ-7 Tags

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