Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Diodes Incorporated FMMT411QTA

Part No.:
FMMT411QTA
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixFMMT411QTA.pdf
Description:
TRANS NPN 15V 0.9A SOT-23
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,622

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

FMMT411QTA from Diodes Incorporated is an NPN silicon planar bipolar transistor engineered for low-voltage avalanche-mode operation, with BVCES > 80 V, BVCEO = 15 V, and IUSB = 35 A typical under pulsed conditions. It delivers fast-edge high-current pulses for laser diode drivers in LIDAR ranging systems and pulse generators.

For engineers reviewing the FMMT411QTA datasheet, FMMT411QTA pinout, FMMT411QTA application, or FMMT411QTA equivalent, key selection criteria include avalanche energy handling, sub-100 ns switching times (tr = 79 ns, tf = 48 ns), SOT23 package thermal resistance (RθJA = 150 °C/W), and AEC-Q101 qualification for automotive pulse circuits.

Technical Context

The FMMT411QTA operates in controlled avalanche breakdown, where energy per pulse is determined by charge voltage and external capacitance (e.g., 470 pF). Its low collector-emitter inductance (LCE = 2 nH) and tight process control enable fast current rise/fall edges critical for time-of-flight measurement.

It requires precise base drive with high di/dt to initiate avalanche; parasitic loop inductance must be minimized to preserve pulse height and edge speed. Thermal management relies on PCB copper area due to its 800 mW power dissipation limit and junction-to-ambient thermal resistance of 150 °C/W.

Key Specifications

ParameterValue and Actual Design Meaning
BVCES>80 V - Enables reliable avalanche initiation at high collector-base voltage without premature breakdown.
BVCEO15 V - Defines maximum safe collector-emitter voltage during non-avalanche conduction.
IUSB35 A typical - Peak pulsed current capability under 70 V VCE, 470 pF load for short-duration energy delivery.
tr / tf79 ns / 48 ns - Fast switching transitions support sub-100 ns pulse widths in timing-critical LIDAR drivers.
LCE2 nH - Ultra-low collector-emitter inductance preserves current slew rate and minimizes ringing in avalanche circuits.
RθJA150 °C/W - Requires ≥15 mm × 15 mm 1 oz copper pad on FR-4 for thermal derating in continuous-pulse operation.
hFE100 min @ IC = 10 mA - Sufficient DC gain for base drive circuit design in gated avalanche trigger stages.

Pinout & Package

Package: SOT23 (Type DN), surface-mount, lead-free, halogen-free, green molding compound (UL 94V-0), moisture sensitivity level 1.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Current sink terminalConnected to ground or low-side return path; carries full avalanche pulse current.
2 (Base)Control inputReceives fast-rising negative pulse to initiate avalanche; sensitive to di/dt and layout parasitics.
3 (Collector)High-energy output nodeDrives laser diode anode or pulse load; exposed to high dI/dt and voltage transients during breakdown.

Key Features

FeatureDesign Value
Avalanche-optimized structureTight process control ensures repeatable, non-destructive avalanche onset at >80 V BVCES for precision timing pulses.
Low-inductance SOT23 packaging2 nH LCE enables <100 ns edge fidelity-critical for sub-nanosecond time-of-flight resolution in LIDAR.
AEC-Q101 qualificationValidated for automotive pulse applications including ADAS LIDAR modules with PPAP and IATF16949 manufacturing traceability.
Green, RoHS-compliant constructionHalogen- and antimony-free (<900 ppm Br/Cl, <1000 ppm Sb) meets automotive environmental compliance requirements.

Applications

LIDAR Ranging SystemsLaser Diode Pulse Drivers

Use Scenario: Time-of-flight distance measurement in autonomous vehicles using pulsed 905 nm laser diodes.

IC Role / Device Role / Timing Role: Avalanche switch generating nanosecond-scale optical pulses with precise edge timing.

Use Value: 35 A peak current and 79 ns rise time enable sub-1 cm spatial resolution in high-speed scanning LIDAR.

Use Scenario: Driving high-power pulsed laser diodes in industrial material processing equipment.

IC Role / Device Role / Timing Role: High-current pulse generator controlling optical pulse amplitude and duration via base-triggered avalanche.

Use Value: 80 V BVCES headroom allows safe operation with 470 pF capacitive loads and 70 V supply rails.

Fast Edge Switch GeneratorsHigh-Speed Pulse Test Equipment

Use Scenario: Generating calibrated fast-rise electrical pulses for oscilloscope calibration and jitter testing.

IC Role / Device Role / Timing Role: Low-inductance avalanche switch producing clean 48 ns fall-time pulses into 50 Ω loads.

Use Value: 2 nH LCE and minimal package parasitics reduce overshoot and maintain signal integrity below 1 GHz.

Use Scenario: Component-level stress testing of ESD protection devices using controlled high-current transients.

IC Role / Device Role / Timing Role: Repetitive avalanche pulse source delivering 35 A pulses at programmable repetition rates.

Use Value: AEC-Q101 qualification and -55°C to +150°C operating range ensure reliability in automated test environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar avalanche transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ZXTN2012ZTABVCEO = 20 V (vs. 15 V); IUSB not specified; fT = 250 MHz (vs. 40 MHz)Higher DC voltage tolerance but no published avalanche pulse rating or IUSB dataSelect only if avalanche operation is not required and RF amplification dominates use case.
DMBT3725A-7-FBVCES = 60 V (vs. >80 V); IC = 1.5 A continuous (vs. 900 mA); no IUSB or avalanche characterizationRated for general-purpose switching-not qualified for repetitive avalanche or automotive pulse dutyUse only in non-avalanche, lower-energy switching where BVCES margin and AEC-Q101 are not required.

Compared with ZXTN2012ZTA and DMBT3725A-7-F, the FMMT411QTA uniquely provides documented 35 A avalanche current, >80 V BVCES, AEC-Q101 qualification, and 2 nH LCE-making it the only option validated for automotive LIDAR pulse generation where edge fidelity and energy repeatability are mandatory.

Availability

FMMT411QTA is available at Aetrix Electronics and suitable for LIDAR ranging systems, laser diode pulse drivers, and fast-edge switch generators requiring stable component supply across automotive, industrial, and test equipment programs.

Supply support for FMMT411QTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.

The FMMT411QTA belongs to Diodes' avalanche-optimized bipolar transistor product line, designed specifically for high-current, fast-edge pulse generation in safety-critical timing and sensing applications.

FAQ

What is the maximum safe avalanche energy per pulse for FMMT411QTA?

The datasheet does not specify a fixed energy limit; instead, safe operation depends on external circuit parameters-primarily the series capacitance (e.g., 470 pF) and charge voltage. Energy is calculated as ½CV², and thermal limits require keeping average power below 800 mW. Layout-induced parasitic inductance must also be minimized to avoid destructive voltage spikes during turn-off.

Can FMMT411QTA be used in linear amplifier configurations?

No-it is not optimized for linear operation. Its design prioritizes controlled avalanche behavior and fast switching, with BVCEO limited to 15 V and hFE characterized only at 10 mA. The device lacks linearity specifications (e.g., distortion, gain flatness) and thermal design for sustained DC bias; use only in pulsed avalanche or saturated-switch modes per the application note.

Is the SOT23 (Type DN) package thermally enhanced compared to standard SOT23?

Yes-the FMMT411QTA's SOT23 (Type DN) variant features a modified internal leadframe and die attach optimized for low-inductance and improved thermal transfer. Its RθJC is 30 °C/W (junction-to-case), significantly lower than typical SOT23 parts (~100–200 °C/W), enabling higher pulse repetition rates when mounted on adequate copper area.

Does AEC-Q101 qualification cover repetitive avalanche operation?

Yes-AEC-Q101 stress testing includes extended temperature cycling, HTRB, and HTGB, all performed under conditions that validate robustness during repetitive high-energy avalanche events. The qualification explicitly covers the FMMT411QTA's intended use case, unlike generic bipolar transistors tested only for DC or switching reliability.

FMMT411QTA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Bulk
Product Status:
Active
Transistor Type:
NPN - Avalanche Mode
Current - Collector (Ic) (Max):
900 mA
Voltage - Collector Emitter Breakdown (Max):
15 V
Vce Saturation (Max) @ Ib, Ic:
100mV @ 1mA, 10mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 10V
Power - Max:
800 mW
Frequency - Transition:
40MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23 (Type DN)

FMMT411QTA FAQ

1.How can I place an order for FMMT411QTA through Aetrix?

Please submit a Request for Quotation (RFQ) for FMMT411QTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FMMT411QTA reliable?

The price and inventory of FMMT411QTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMMT411QTA is usually 5 days.

3.What payment methods are accepted for FMMT411QTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMMT411QTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FMMT411QTA?

FMMT411QTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FMMT411QTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FMMT411QTA?

For technical support, including FMMT411QTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMMT411QTA requirements.

6.How does Aetrix verify that FMMT411QTA is sourced from the original manufacturer or authorized distributors?

All FMMT411QTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMMT411QTA meets industry standards.

7.What is the process for return or replacement of FMMT411QTA?

All FMMT411QTA units undergo pre-shipment inspection (PSI). If there is an issue with FMMT411QTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FMMT411QTA part is unused and in its original packaging.

Return procedure for FMMT411QTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

FMMT411QTA Tags

  • FMMT411QTA
  • FMMT411QTA PDF
  • FMMT411QTA Datasheet
  • FMMT411QTA Specifications
  • FMMT411QTA Images
  • Diodes Incorporated
  • Diodes Incorporated FMMT411QTA
  • Buy FMMT411QTA
  • FMMT411QTA Price
  • FMMT411QTA Distributor
  • FMMT411QTA Supplier
  • FMMT411QTA Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER