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Diodes Incorporated FMMT411TA
- Part No.:
- FMMT411TA
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
FMMT411TA.pdf
- Description:
- TRANS NPN 80V 0.9A SOT-23
- Quantity:
- Payment:
- Shipping:
Inventory:2,316
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Product details
Overview
FMMT411TA from Diodes Incorporated is an NPN low-voltage avalanche transistor in SOT23 package, designed specifically for controlled avalanche-mode operation with BVCES > 80 V, BVCEO = 15 V, and IUSB = 35 A typical pulse current. It delivers fast-edge high-current pulses for laser diode drivers in LIDAR ranging systems and high-speed pulse generation circuits.
For engineers reviewing the FMMT411TA datasheet, FMMT411TA pinout, FMMT411TA application, or FMMT411TA equivalent, key selection criteria include avalanche energy handling, sub-120 ns switching times (tr = 79 ns, tf = 48 ns), low Lce = 2 nH, and thermal resistance RθJL = 30 °C/W - critical for repetitive pulse reliability in compact PCB layouts.
Technical Context
The FMMT411TA operates in controlled avalanche breakdown rather than standard active/saturation modes, requiring precise base drive to initiate and terminate conduction via stored charge and circuit capacitance. Its design emphasizes low-inductance packaging (Lce = 2 nH) and tight process control to sustain high di/dt without second-breakdown failure.
It is rated for VCES = 80 V and BVCEO = 15 V, indicating intentional asymmetry: high collector-base standoff enables energy storage in external capacitors (e.g., 470 pF), while low emitter-collector breakdown limits safe operating voltage during avalanche. Thermal performance relies on junction-to-leads conduction (RθJL = 30 °C/W), not ambient dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVCES | >80 V - Enables reliable 70 V avalanche operation with margin against transient overvoltage. |
| BVCEO | 15 V - Defines maximum safe collector-emitter voltage outside avalanche; constrains bias network design. |
| IUSB | 35 A typical - Peak pulsed current capability under defined test conditions (VCE = 70 V, CCE = 470 pF). |
| Lce | 2 nH - Low collector-emitter inductance minimizes voltage overshoot and preserves pulse edge fidelity. |
| fT | 40 MHz - Transition frequency confirms usable gain-bandwidth for base drive signal integrity at high speed. |
| RθJL | 30 °C/W - Junction-to-leads thermal resistance enables efficient heat transfer to PCB copper through collector lead. |
| hFE | 100 min - DC current gain sufficient for low-base-drive pulse triggering without excessive gate driver loading. |
Pinout & Package
Package: SOT23 (Type DN), surface-mount plastic package with matte tin-plated leads, moisture sensitivity level 1, weight ≈ 0.008 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| E (Emitter) | Current sink terminal during avalanche conduction | Connected to ground or low-impedance return path; critical for minimizing loop inductance in pulse discharge path. |
| B (Base) | Control input for avalanche initiation | Receives fast-rising pulse to trigger breakdown; requires low-inductance drive to achieve <120 ns turn-on. |
| C (Collector) | High-voltage energy storage node | Connects to charged capacitor (e.g., 470 pF @ 70 V); must be routed with minimal trace length to limit parasitic inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-optimized structure | Tight process control ensures repeatable, non-destructive avalanche breakdown up to 35 A pulses. |
| Ultra-low package inductance | Lce = 2 nH enables sub-100 ns rise/fall times without oscillation or voltage ringing. |
| High-reliability qualification | Qualified to JEDEC standards per AEC-Q definitions; suitable for industrial and automotive-adjacent pulse systems. |
| Green, lead-free construction | Halogen- and antimony-free molding compound (Br+Cl <1500 ppm, Sb <1000 ppm) meets RoHS 3 and J-STD-020 Level 1. |
Applications
| LIDAR Laser Driver | Fast Edge Pulse Generator |
|---|---|
|
Use Scenario: Time-of-flight distance measurement using pulsed 905 nm laser diodes in automotive and industrial LIDAR modules. IC Role / Device Role / Timing Role: Avalanche switch delivering 35 A, ~100 ns pulses to laser diode anode with precise timing edge control. Use Value: Enables sub-nanosecond jitter timing resolution by minimizing pulse dispersion from package inductance (Lce = 2 nH) and ensuring consistent breakdown voltage (BVCES > 80 V). |
Use Scenario: Generating calibrated high-speed test pulses for oscilloscope calibration, time-domain reflectometry, or logic analyzer stimulus. IC Role / Device Role / Timing Role: Core avalanche switch in a capacitor-discharge topology, triggered by fast base pulse to produce repeatable 100–200 ns edges. Use Value: Delivers tr = 79 ns and tf = 48 ns with minimal overshoot due to low Lce and optimized SOT23 leadframe geometry. |
| High-Speed Switching Power Stage | Precision Avalanche Reference Source |
|
Use Scenario: Compact, high-di/dt switching stage in portable pulse-forming networks for scientific instrumentation or medical ablation devices. IC Role / Device Role / Timing Role: Primary avalanche switch controlling energy delivery from HV capacitor bank into load; collector handles 70 V, emitter sinks 35 A peak. Use Value: Supports repetitive operation with RθJL = 30 °C/W enabling direct thermal coupling to PCB copper, avoiding discrete heatsinks in space-constrained designs. |
Use Scenario: Stable, low-drift avalanche reference node in precision timing or voltage calibration circuits requiring predictable breakdown onset. IC Role / Device Role / Timing Role: Voltage reference element operating in controlled first-quadrant avalanche mode with BVCES = 80 V and tight parameter distribution. Use Value: Tight BVCES tolerance (typ. 75 V at TJ = 150°C) and low temperature coefficient support stable reference behavior across industrial temperature range (−55°C to +150°C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar avalanche transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN2012Z | BVCEO = 20 V (vs. 15 V); IUSB = 25 A typical; SOT89 package (higher thermal mass, larger footprint) | Better continuous power handling but slower switching (tr = 140 ns); less suitable for sub-100 ns edge generation | Prefer when thermal management dominates over edge speed, e.g., single-shot high-energy discharge. |
| DMBT3725A | BVCES = 60 V (vs. >80 V); fT = 250 MHz; SOT23-3 package; not avalanche-qualified | Higher small-signal bandwidth but no guaranteed avalanche robustness; unsuitable for repetitive high-energy pulses | Select only for linear/switching applications below 60 V - not a drop-in replacement for avalanche-mode use. |
Compared with ZXTN2012Z and DMBT3725A, the FMMT411TA uniquely balances high BVCES (>80 V), ultra-fast edges (tr = 79 ns), and validated avalanche endurance - making it irreplaceable where both voltage margin and nanosecond pulse fidelity are required.
Availability
FMMT411TA is available at Aetrix Electronics and suitable for LIDAR laser drivers, fast edge pulse generators, and high-speed switching power stages requiring stable component supply and traceable sourcing for production ramp.
Supply support for FMMT411TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for industrial, computing, and automotive markets.
The FMMT411TA belongs to Diodes' avalanche-optimized bipolar transistor product line, engineered specifically for controlled high-current pulse generation in compact, thermally constrained systems like portable LIDAR and test equipment.
FAQ
Is FMMT411TA qualified for automotive applications?
No - the FMMT411TA is not automotive-qualified. Diodes offers the FMMT411Q variant, which is explicitly qualified to AEC-Q standards and documented in a separate datasheet. The TA version is intended for industrial and commercial pulse-generation applications where full automotive qualification is not required.
What is the maximum recommended pulse repetition rate for FMMT411TA?
The datasheet does not specify a maximum repetition rate because it depends entirely on external circuit parameters: capacitor value, charge voltage, PCB thermal design, and ambient temperature. For reliable operation, total avalanche energy per pulse multiplied by frequency must keep junction temperature below +150°C - verified experimentally per application layout.
Can FMMT411TA be used in linear amplifier configurations?
No - the FMMT411TA is not characterized or optimized for linear operation. Its electrical specifications (e.g., hFE, VCE(sat)) are measured under pulsed conditions, and its structure prioritizes avalanche robustness over gain linearity or thermal stability in active mode. Use standard general-purpose transistors like BC847 for amplification.
Why is the BVCEO rating only 15 V despite high BVCES?
BVCEO = 15 V reflects the transistor's safe operating voltage with base open - a condition that prevents controlled avalanche initiation. This low rating ensures the device remains non-conductive until deliberately triggered via base drive, preventing unintended breakdown during standby or biasing phases in pulse circuits.
FMMT411TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Avalanche Mode
- Current - Collector (Ic) (Max):
- 900 mA
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 10V
- Power - Max:
- 730 mW
- Frequency - Transition:
- 40MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (Type DN)
FMMT411TA FAQ
1.How can I place an order for FMMT411TA through Aetrix?
Please submit a Request for Quotation (RFQ) for FMMT411TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FMMT411TA reliable?
The price and inventory of FMMT411TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMMT411TA is usually 5 days.
3.What payment methods are accepted for FMMT411TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMMT411TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FMMT411TA?
FMMT411TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FMMT411TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FMMT411TA?
For technical support, including FMMT411TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMMT411TA requirements.
6.How does Aetrix verify that FMMT411TA is sourced from the original manufacturer or authorized distributors?
All FMMT411TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMMT411TA meets industry standards.
7.What is the process for return or replacement of FMMT411TA?
All FMMT411TA units undergo pre-shipment inspection (PSI). If there is an issue with FMMT411TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FMMT411TA part is unused and in its original packaging.
Return procedure for FMMT411TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FMMT411TA Tags
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Diodes Incorporated
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