My Inquiry
My Account
Diodes Incorporated FMMT411TD
- Part No.:
- FMMT411TD
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
FMMT411TD.pdf
- Description:
- TRANS NPN 15V 0.9A SOT-23
- Quantity:
- Payment:
- Shipping:
Inventory:440
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
FMMT411TD from Diodes Incorporated is an NPN low-voltage avalanche transistor in SOT23 package, designed for controlled avalanche-mode operation with BVCES > 80 V, BVCEO = 15 V, IUSB = 35 A typical, and fast switching (tr = 79 ns, tf = 48 ns). It delivers high-current, nanosecond-edge pulses for laser diode drivers in LIDAR ranging systems.
For engineers reviewing the FMMT411TD datasheet, FMMT411TD pinout, FMMT411TD application, or FMMT411TD equivalent, key selection criteria include avalanche energy handling, low collector-emitter inductance (Lce = 2 nH), tight thermal resistance (RθJL = 30 °C/W), and JEDEC-qualified reliability for pulse-intensive industrial sensing.
Technical Context
The FMMT411TD operates in controlled avalanche breakdown rather than saturation or linear mode, requiring precise base drive to initiate and terminate conduction within safe energy limits. Its BVCES > 80 V and low Lce (2 nH) enable stable, repeatable high-current pulses without secondary breakdown under defined CCE = 470 pF, VCE = 70 V conditions.
It features a silicon planar structure with tight process control and low-inductance SOT23 (Type DN) packaging optimized for minimal loop area. Thermal design must account for pulsed power dissipation and PCB layout-dependent RθJA (156 °C/W), as junction temperature must remain below +150 °C during repetitive operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVCES | > 80 V - Ensures reliable avalanche initiation at high collector-base voltage without premature breakdown. |
| BVCEO | 15 V - Defines maximum safe collector-emitter voltage before uncontrolled breakdown in non-avalanche bias. |
| IUSB | 35 A typical - Peak pulsed current capability under standardized 470 pF capacitive load and 70 V VCE. |
| Lce | 2 nH - Low collector-emitter inductance enables fast current rise/fall times (tr = 79 ns, tf = 48 ns). |
| RθJL | 30 °C/W - Junction-to-leads thermal resistance supports high-pulse-power operation with direct lead heat sinking. |
| fT | 40 MHz - Transition frequency confirms usable gain-bandwidth for high-speed switching control loops. |
| ESD HBM | 4,000 V - Robustness against human-body electrostatic discharge during handling and assembly. |
Pinout & Package
Package: SOT23 (Type DN), surface-mount, molded plastic with matte tin-plated leads, moisture sensitivity level 1, weight ≈ 0.008 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Emission terminal for majority carriers | Low-impedance return path; connected to ground or low-side reference in avalanche pulse circuits. |
| 2 (Base) | Control electrode for avalanche initiation | Receives fast-rising negative pulse to trigger controlled avalanche; requires low-inductance drive path. |
| 3 (Collector) | High-energy current output node | Delivers 35 A pulsed current into laser diode or pulse load; routed with minimal trace inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-optimized structure | Tight process control ensures repeatable, energy-limited avalanche behavior without destructive second breakdown. |
| Ultra-low Lce | 2 nH collector-emitter inductance preserves pulse edge fidelity and enables sub-100 ns rise times. |
| JEDEC-qualified reliability | Qualified per AEC-Q standards for high-reliability industrial and automotive-adjacent pulse applications. |
| Green, RoHS-compliant construction | Halogen- and antimony-free molding compound (<900 ppm Br/Cl, <1000 ppm Sb) meets global environmental mandates. |
| SOT23 thermal performance | RθJL = 30 °C/W enables effective heat transfer through leads-critical for pulsed power dissipation management. |
Applications
| LIDAR Ranging Systems | Fast Edge Pulse Generators |
|---|---|
|
Use Scenario: Time-of-flight distance measurement using pulsed 905 nm laser diodes in autonomous vehicle sensors. IC Role / Device Role / Timing Role: Avalanche switch delivering 35 A, <100 ns current pulses to laser diode anode with precise timing control. Use Value: Enables centimeter-level resolution via sub-nanosecond edge control and repeatable pulse amplitude across temperature (-55°C to +150°C). |
Use Scenario: Generating calibrated high-voltage, high-current transients for ESD immunity testing fixtures. IC Role / Device Role / Timing Role: Controlled avalanche element shaping nanosecond-rise pulses into 50 Ω loads with minimal overshoot. Use Value: Delivers consistent 35 A peak current pulses with tr = 79 ns and tf = 48 ns, validated across production lots. |
| Laser-Based Industrial Metrology | Precision Time-Domain Reflectometry |
|
Use Scenario: Sub-micron displacement sensing in CNC machine tools using short-pulse laser interferometry. IC Role / Device Role / Timing Role: High-speed switch triggering laser pulses synchronized to encoder position feedback. Use Value: BVCES > 80 V and low Lce ensure stable pulse generation even with parasitic inductance from long flex-cable interconnects. |
Use Scenario: Injecting calibrated step pulses into coaxial transmission lines to detect impedance discontinuities in PCB traces. IC Role / Device Role / Timing Role: Fast-edge source driving 50 Ω characteristic impedance with minimal ringback. Use Value: VCE(sat) ≤ 100 mV at IC = 10 mA and fT = 40 MHz support clean pulse fidelity up to 100 MHz bandwidth. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar avalanche-switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN25050DFH | BVCEO = 50 V (vs. 15 V); higher hFE (200 min); not avalanche-qualified; SOT23-3L | Designed for linear/saturation switching-not rated for controlled avalanche energy delivery | Select only if operating strictly below BVCEO with no avalanche requirement; unsuitable for LIDAR pulse generation. |
| DMBT3581E | BVCES = 60 V (vs. >80 V); IUSB not specified; RθJL = 45 °C/W (vs. 30 °C/W); SOT23-3 | Rated for general-purpose high-speed switching-not characterized for repetitive avalanche pulse integrity | Acceptable for lower-energy pulse applications but lacks documented avalanche consistency and thermal margin for 35 A pulses. |
Compared with ZXTN25050DFH and DMBT3581E, the FMMT411TD uniquely provides guaranteed avalanche performance (BVCES > 80 V, IUSB = 35 A), lower thermal resistance, and JEDEC-qualified reliability-making it the only option validated for repetitive, high-energy nanosecond pulse generation.
Availability
FMMT411TD is available at Aetrix Electronics and suitable for LIDAR ranging systems, fast-edge pulse generators, and precision time-domain reflectometry equipment requiring stable component supply and repeatable avalanche behavior.
Supply support for FMMT411TD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for industrial, computing, and automotive markets.
The FMMT411TD belongs to Diodes' avalanche transistor product line, engineered specifically for nanosecond-edge, high-current pulse generation in optical sensing and test instrumentation.
FAQ
Is FMMT411TD qualified for automotive applications?
No-the standard FMMT411TD is not automotive-qualified. Diodes offers the FMMT411Q variant, which is explicitly qualified to AEC-Q101 standards and documented in a separate datasheet. The TD version meets industrial-grade JEDEC reliability but lacks automotive-specific stress testing and PPAP documentation.
What is the maximum safe single-pulse energy for FMMT411TD in avalanche mode?
Maximum safe single-pulse energy depends on circuit layout, capacitance (CCE), and VCE. With CCE = 470 pF and VCE = 70 V, energy is ~1.15 mJ. Exceeding this risks permanent lattice damage. Diodes specifies IUSB = 35 A under these exact conditions-designers must verify layout parasitics and limit duty cycle to avoid junction overheating.
Can FMMT411TD be used in linear amplifier configurations?
No-it is not intended for linear operation. Its BVCEO = 15 V and optimized avalanche structure make it unsuitable for analog amplification. Operation above 15 V VCE risks uncontrolled breakdown. The device's hFE = 100 min is specified only at IC = 10 mA, VCE = 10 V-well below avalanche threshold and not representative of linear gain stability.
Why does FMMT411TD have such a low BVCEO relative to its BVCES?
This reflects intentional design for avalanche-mode operation: BVCES > 80 V allows robust collector-base breakdown initiation, while low BVCEO = 15 V prevents unintended collector-emitter conduction outside controlled avalanche. The asymmetry ensures the device remains fully off until deliberately triggered into avalanche via base drive-enhancing timing precision and pulse repeatability.
FMMT411TD Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Avalanche Mode
- Current - Collector (Ic) (Max):
- 900 mA
- Voltage - Collector Emitter Breakdown (Max):
- 15 V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 10V
- Power - Max:
- 730 mW
- Frequency - Transition:
- 40MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (Type DN)
FMMT411TD FAQ
1.How can I place an order for FMMT411TD through Aetrix?
Please submit a Request for Quotation (RFQ) for FMMT411TD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FMMT411TD reliable?
The price and inventory of FMMT411TD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMMT411TD is usually 5 days.
3.What payment methods are accepted for FMMT411TD?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMMT411TD transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FMMT411TD?
FMMT411TD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FMMT411TD order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FMMT411TD?
For technical support, including FMMT411TD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMMT411TD requirements.
6.How does Aetrix verify that FMMT411TD is sourced from the original manufacturer or authorized distributors?
All FMMT411TD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMMT411TD meets industry standards.
7.What is the process for return or replacement of FMMT411TD?
All FMMT411TD units undergo pre-shipment inspection (PSI). If there is an issue with FMMT411TD, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FMMT411TD part is unused and in its original packaging.
Return procedure for FMMT411TD:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FMMT411TD Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
