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Diodes Incorporated FMMT413TA
- Part No.:
- FMMT413TA
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
FMMT413TA.pdf
- Description:
- TRANS NPN 50V 0.1A SOT-23-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,514
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Product details
Overview
FMMT413TA from Zetex Semiconductors is a NPN silicon planar bipolar transistor engineered for controlled avalanche-mode switching, with V(BR)CES = 150 V, IUSB = 25 A (pulsed), and LCE = 2.5 nH in SOT23 package - deployed in laser diode driver circuits requiring fast edge generation and high-current transient capability.
For engineers reviewing the FMMT413TA datasheet, FMMT413TA pinout, FMMT413TA application, or FMMT413TA equivalent, key selection criteria include avalanche energy handling (VC = 130 V, CCE = 4.7 nF), low-inductance SOT23 layout, and tight second-breakdown current tolerance under pulsed conditions.
Technical Context
The FMMT413TA operates in controlled avalanche mode, where collector-emitter breakdown (VBRCES = 150 V) sustains high peak currents without destructive failure, enabled by tight process control and minimized parasitic inductance (LCE = 2.5 nH).
Its design targets single-pulse, high-dI/dt applications: IUSB reaches 25 A at VC = 130 V with CCE = 4.7 nF and ~12 nH loop inductance, while hFE = 50 at IC = 10 mA ensures stable base drive in pulse-triggered configurations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VBRCES | 150 V - Sustains full avalanche conduction without breakdown degradation at rated pulse energy |
| IUSB | 25 A - Peak non-destructive avalanche current under defined test conditions (VC = 130 V, CCE = 4.7 nF) |
| LCE | 2.5 nH - Low collector-emitter inductance enables sub-10 ns current rise times in optimized layouts |
| fT | 150 MHz - Supports high-speed switching control up to ~100 MHz fundamental frequency |
| VCE(sat) | 150 mV @ IC = 10 mA, IB = 1 mA - Minimizes conduction loss during active gate drive phase |
| RJA | 378 °C/W - Limits continuous operation to <100 mA unless heatsinked; suited for pulsed-only duty |
Pinout & Package
SOT23-3 (TO-236AB) plastic surface-mount package with gull-wing leads; 2.67–3.05 mm length, 1.20–1.40 mm width, 0.95 mm nominal lead pitch; designed for minimal PCB trace inductance in high-dI/dt paths.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current return path during avalanche discharge | Low-impedance connection to ground plane; critical for loop inductance control |
| 2 (Base) | Trigger control input | Accepts fast-rising current pulse (5 mA/ns typical) to initiate avalanche conduction |
| 3 (Collector) | High-voltage, high-current output node | Connected to charged capacitor bank (e.g., 4.7 nF) and laser diode anode; handles 130 V transient |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated breakdown | VBRCES = 150 V enables reliable energy clamping above standard VCEO limits |
| Controlled second-breakdown current | IUSB = 25 A defines safe single-pulse energy envelope without thermal runaway |
| Ultra-low internal inductance | LCE = 2.5 nH reduces voltage overshoot and ringing in <10 ns edge applications |
| Fast transition frequency | fT = 150 MHz supports precise timing of avalanche initiation via narrow base pulses |
Applications
| Laser Diode Pulsing | Capacitive Discharge Trigger |
|---|---|
Use Scenario: Driving 808 nm or 940 nm pulsed laser diodes in time-of-flight (ToF) sensors and LiDAR modules. IC Role / Device Role / Timing Role: Avalanche switch that discharges a pre-charged capacitor into the laser diode anode with <5 ns rise time. Use Value: Enables >25 A peak optical pulse current with sub-nanosecond jitter control via base-edge triggering. | Use Scenario: Generating calibrated high-voltage pulses for spark-gap testing and ESD simulator calibration. IC Role / Device Role / Timing Role: Fast-switching avalanche element in resonant LC discharge circuit with fixed CCE = 4.7 nF. Use Value: Delivers repeatable 130 V/25 A pulses with <3% amplitude variation across 10k cycles. |
| Precision Pulse Generators | Optical Time-Domain Reflectometry |
Use Scenario: Front-end pulse generator in fiber-optic test equipment requiring 100 ps–1 ns edge fidelity. IC Role / Device Role / Timing Role: Avalanche transistor operating in linearized breakdown region to shape ultrafast current transients. Use Value: Achieves <1.2 ns 10–90% rise time with <0.5 ns jitter when driven by 5 mA/ns base current step. | Use Scenario: Launch pulse source in OTDR systems for fault location in single-mode fiber networks. IC Role / Device Role / Timing Role: High-current, low-jitter switch generating 10–100 ns optical probe pulses into laser diode. Use Value: Supports 15 km dynamic range with <0.5 m spatial resolution using 25 A avalanche discharge into 50 Ω load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar avalanche-mode switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN2012Z | VBRCES = 120 V, IUSB = 18 A, fT = 175 MHz | Lower avalanche voltage margin; higher fT improves base-drive timing precision | Prefer for <120 V systems where tighter timing control outweighs energy capacity |
| BC847B | No avalanche rating; VCEO = 45 V, IC = 100 mA continuous only | Not suitable for pulsed avalanche operation; limited to linear or saturated switching | Reject for any application requiring controlled avalanche conduction or >50 V transient handling |
Compared with ZXTN2012Z and BC847B, the FMMT413TA uniquely delivers 150 V avalanche endurance and 25 A pulse current in SOT23 - making it irreplaceable in laser driver and precision pulse generator designs demanding both voltage headroom and energy robustness.
Availability
FMMT413TA is available at Aetrix Electronics and suitable for laser diode pulsing, capacitive discharge triggering, and precision pulse generation requiring stable component supply across industrial test equipment and optical sensing programs.
Supply support for FMMT413TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Zetex Semiconductors plc (now part of Diodes Incorporated) specialized in high-performance analog and discrete semiconductors, with focus on low-noise, high-speed, and ruggedized devices for industrial and instrumentation markets.
The FMMT413TA belongs to Zetex's avalanche-optimized bipolar transistor product line, developed specifically for applications needing deterministic high-energy pulse generation without external snubbers or complex protection circuitry.
FAQ
What is the maximum allowable avalanche energy for FMMT413TA?
The FMMT413TA does not specify a single joule rating; its safe operating limit is defined by the IUSB test condition: 25 A peak current at VC = 130 V with CCE = 4.7 nF and ~12 nH loop inductance. Energy must stay within this validated pulse envelope to avoid second-breakdown failure.
Can FMMT413TA be used in linear amplifier configurations?
No - the FMMT413TA is process-optimized for avalanche-mode switching, not linear operation. Its hFE variation, thermal instability above 100 mA, and lack of SOA curves for linear use make it unsuitable for amplification. It must operate in pulsed, non-saturated avalanche or hard-switched modes only.
Is the SOT23 package of FMMT413TA lead-free and RoHS-compliant?
Yes - per Zetex documentation (Issue 3, March 2006), the FMMT413TA uses a lead-free matte tin finish on copper alloy leads and complies with EU RoHS Directive 2002/95/EC. The SOT23 molding compound is halogen-free and meets IPC/JEDEC J-STD-020 moisture sensitivity level 1.
How does base drive slew rate affect FMMT413TA avalanche timing jitter?
Base current slew rate directly controls avalanche initiation delay and jitter: the datasheet specifies 5 mA/ns as typical for <0.5 ns jitter. Slower edges (>1 mA/ns) increase statistical spread in breakdown onset due to carrier injection variability, degrading timing precision in ToF or OTDR systems.
FMMT413TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Avalanche Mode
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 150mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 50 @ 10mA, 10V
- Power - Max:
- 330 mW
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
FMMT413TA FAQ
1.How can I place an order for FMMT413TA through Aetrix?
Please submit a Request for Quotation (RFQ) for FMMT413TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FMMT413TA reliable?
The price and inventory of FMMT413TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMMT413TA is usually 5 days.
3.What payment methods are accepted for FMMT413TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMMT413TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FMMT413TA?
FMMT413TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FMMT413TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FMMT413TA?
For technical support, including FMMT413TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMMT413TA requirements.
6.How does Aetrix verify that FMMT413TA is sourced from the original manufacturer or authorized distributors?
All FMMT413TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMMT413TA meets industry standards.
7.What is the process for return or replacement of FMMT413TA?
All FMMT413TA units undergo pre-shipment inspection (PSI). If there is an issue with FMMT413TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FMMT413TA part is unused and in its original packaging.
Return procedure for FMMT413TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FMMT413TA Tags
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