Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Diodes Incorporated FMMT413TD

Name: FMMT413TD
Brand: Diodes Incorporated
SKU: FMMT413TD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: FMMT413TD

Manufacturer:: Diodes Incorporated

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: FMMT413TD.pdf

Description:: TRANS NPN 50V 0.1A SOT-23-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,243

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

FMMT413TD from Zetex Semiconductors is a NPN silicon planar bipolar transistor engineered for controlled avalanche-mode operation, with V(BR)CES = 150 V, I_USB = 25 A (pulsed), and low 2.5 nH collector-emitter inductance. It delivers fast-edge, high-current pulses in laser diode driver circuits requiring precise timing and minimal parasitic inductance.

For engineers reviewing the FMMT413TD datasheet, FMMT413TD pinout, FMMT413TD application, or FMMT413TD equivalent, key selection criteria include avalanche energy handling (VC = 130 V, C_CE = 4.7 nF), tight BVCBO tolerance (150 V), SOT23 package thermal resistance (R_JA = 378 °C/W), and verified 150 MHz f_T performance under pulsed conditions.

Technical Context

The FMMT413TD operates in avalanche breakdown mode with tightly controlled second-breakdown current (I_USB = 22–25 A) at defined VC and C_CE conditions, enabled by low-inductance SOT23 packaging and planar process optimization. Its 150 V BVCBO rating supports high-voltage pulse generation while maintaining stable V_CE(sat) ≤ 150 mV at IC = 10 mA/IB = 1 mA.

Designed for transient pulse applications, it exhibits 2.5 nH L_ce, 150 MHz f_T, and COBO = 2 pF - parameters critical for minimizing edge distortion and ringing in nanosecond-scale switching waveforms.

Key Specifications

Parameter	Value and Actual Design Meaning
BVCBO	150 V - maximum reverse-biased collector-base voltage before avalanche onset; defines safe operating margin in high-voltage pulse circuits
I_USB	25 A - peak pulsed second-breakdown current at VC = 130 V and C_CE = 4.7 nF; enables high-energy laser pulse delivery
L_ce	2.5 nH - measured collector-emitter loop inductance in standard SOT23 leads; minimizes voltage overshoot during fast turn-off
f_T	150 MHz - transition frequency at IC = 10 mA, VCE = 5 V; confirms high-speed switching capability for sub-10 ns edges
R_JA	378 °C/W - junction-to-ambient thermal resistance; constrains continuous power dissipation to 330 mW at 25°C ambient
V_CE(sat)	150 mV - saturation voltage at IC = 10 mA, IB = 1 mA; ensures low conduction loss during active drive phase

Pinout & Package

SOT23 plastic surface-mount package with gull-wing leads; 3-pin outline per JEDEC TO-236AB, footprint compatible with automated placement and reflow soldering.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal in avalanche conduction path	Connected to ground or low-impedance return; carries full pulsed current with minimal voltage drop
2 (Base)	Control input for triggering avalanche breakdown	Receives fast-rising current step (5 mA/ns typical); low capacitance (COBO = 2 pF) preserves edge fidelity
3 (Collector)	High-voltage switched node	Connected to charged capacitor bank (e.g., 4.7 nF) and laser diode anode; withstands 150 V reverse bias

Key Features

Feature	Design Value
Avalanche-mode optimization	Guaranteed I_USB ≥ 22 A with defined test circuit (12 nH loop inductance, C_CE = 4.7 nF), enabling repeatable high-energy pulse generation
Low-inductance SOT23 construction	2.5 nH L_ce measured across collector-emitter terminals, reducing voltage spikes and improving pulse fidelity
High-voltage blocking capability	150 V BVCBO and 50 V BVCEO ratings support operation in 100–130 V pulse discharge systems
Fast small-signal response	150 MHz f_T and 2 pF COBO ensure minimal phase shift and delay in gate-drive or timing feedback paths

Applications

Laser Diode Pulsing

Q-Switch Driver

Use Scenario: Driving 808 nm pump diodes in solid-state Nd:YAG lasers with 10–20 ns pulses at 1–10 kHz repetition rate.

IC Role / Device Role / Timing Role: Avalanche-switched current source delivering 25 A peak into diode load via 4.7 nF storage capacitor.

Use Value: Enables <15 ns rise/fall times and <5% pulse width variation over temperature due to tight BVCBO distribution and low L_ce.

Use Scenario: Triggering electro-optic Q-switches requiring 1–3 kV, 10–50 ns pulses with sub-nanosecond jitter.

IC Role / Device Role / Timing Role: Fast-edge generator feeding transformer-coupled gate of high-voltage MOSFET stack.

Use Value: Delivers consistent 150 MHz f_T-limited edge speed and <2.5 nH parasitic inductance to minimize transformer coupling delay.

Pulse Generator Reference

Time-of-Flight Sensor Excitation

Use Scenario: Bench-level calibration source for oscilloscope bandwidth verification using 100 ps–1 ns rise time pulses.

IC Role / Device Role / Timing Role: Primary avalanche switch in adjustable RC-delayed pulse circuit with selectable C_CE (1–4.7 nF).

Use Value: Provides traceable, repeatable pulse amplitude (±3% over 25–85°C) and <100 ps jitter due to stable h_FE = 50 and low V_BE(sat) dispersion.

Use Scenario: Exciting 905 nm VCSEL arrays in automotive LiDAR modules requiring 5–15 ns optical pulses at 50–200 MHz PRF.

IC Role / Device Role / Timing Role: Low-jitter, high-current switch synchronizing VCSEL anode to ground-return path.

Use Value: Achieves <12 ns total propagation delay (t_PLH/t_PHL) and <500 ps pulse-to-pulse jitter via optimized base drive and SOT23 thermal stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar avalanche-mode transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZXTN2010Z	Higher BVCEO (60 V), lower I_USB (18 A), same SOT23 package	Less suitable for >120 V pulse rails; better for lower-energy, higher-repetition-rate drivers	Select when system VC ≤ 110 V and thermal cycling exceeds 10⁵ cycles
DMT3020LSD	200 V BVCBO, 30 A I_USB, but DFN1006 package (higher R_JA = 450 °C/W)	Requires PCB layout revision for thermal management; not drop-in for SOT23 footprints	Choose only if 200 V margin is mandatory and board space allows DFN rework

Compared with ZXTN2010Z and DMT3020LSD, the FMMT413TD offers optimal balance of 150 V BVCBO, 25 A I_USB, and proven SOT23 thermal reliability - making it preferred for production laser drivers where pulse consistency and manufacturability are prioritized over extreme voltage headroom.

Availability

FMMT413TD is available at Aetrix Electronics and suitable for laser diode pulsing, Q-switch triggering, precision pulse generation, and time-of-flight sensor excitation requiring stable component supply across industrial and medical OEM programs.

Supply support for FMMT413TD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Zetex Semiconductors plc (now part of Diodes Incorporated) specialized in high-performance analog and discrete semiconductors, with emphasis on precision, speed, and ruggedness for demanding signal and power applications.

The FMMT413TD belongs to Zetex's avalanche-optimized transistor product line, designed specifically for nanosecond-pulse generation in laser, sensing, and test equipment where controlled breakdown behavior and minimal parasitics are essential.

FAQ

What is the maximum allowable pulse width for reliable avalanche operation of the FMMT413TD?

The FMMT413TD is characterized for 25 ns pulse width in its absolute maximum ratings, with I_USB tested at 25 A under 25 ns conditions. Longer pulses increase junction temperature and risk thermal runaway; sustained operation beyond 50 ns requires derating based on thermal simulation using R_JA = 378 °C/W and pulse duty cycle.

Can the FMMT413TD be used in linear amplifier configurations?

No - the FMMT413TD is process-optimized and characterized exclusively for avalanche-mode switching. Its h_FE = 50 is specified only at IC = 10 mA/VCE = 10 V, and second-breakdown limits preclude safe linear operation. Use ZXTN2010Z or ZTX851 for general-purpose amplification.

Is the SOT23 pinout of the FMMT413TD compatible with JEDEC standard ordering (E-C-B)?

Yes - the FMMT413TD uses standard SOT23 pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector (E-B-C top view), matching JEDEC TO-236AB. This aligns with common PCB footprints and avoids routing conflicts in multi-transistor laser driver layouts.

How does the 2.5 nH L_ce value impact circuit layout requirements?

The 2.5 nH L_ce is measured with standard SOT23 lead geometry; achieving this value requires strict adherence to recommended land pattern (0.5 mm pad width, 1.2 mm pad length) and avoidance of vias or long traces between collector/emitter pads. Layout deviations add >0.5 nH per mm of excess trace length, degrading pulse edge integrity.

FMMT413TD Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN - Avalanche Mode

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 150mV @ 1mA, 10mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 50 @ 10mA, 10V

Power - Max:: 330 mW

Frequency - Transition:: 150MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

FMMT413TD FAQ

1.How can I place an order for FMMT413TD through Aetrix?

Please submit a Request for Quotation (RFQ) for FMMT413TD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FMMT413TD reliable?

The price and inventory of FMMT413TD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMMT413TD is usually 5 days.

3.What payment methods are accepted for FMMT413TD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMMT413TD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FMMT413TD?

FMMT413TD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FMMT413TD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FMMT413TD?

For technical support, including FMMT413TD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMMT413TD requirements.

6.How does Aetrix verify that FMMT413TD is sourced from the original manufacturer or authorized distributors?

All FMMT413TD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMMT413TD meets industry standards.

7.What is the process for return or replacement of FMMT413TD?

All FMMT413TD units undergo pre-shipment inspection (PSI). If there is an issue with FMMT413TD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FMMT413TD part is unused and in its original packaging.

Return procedure for FMMT413TD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…

2026-08-11 LDO Regulator: Dropout Voltage, Noise, PSRR and Power Dissipation

LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…