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Diodes Incorporated FMMT415TA

Part No.:
FMMT415TA
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
AetrixFMMT415TA.pdf
Description:
TRANS NPN 100V 0.5A SOT-23-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,412

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Product details

Overview

FMMT415TA from Diodes Incorporated is an NPN avalanche transistor in SOT23 package, designed specifically for controlled avalanche-mode operation with 260V collector-emitter sustaining voltage (VCES), 100V breakdown under open-base conditions (BVCEO), and 60A peak avalanche current capability at 20ns pulse width. It delivers fast-edge, high-current pulses for precision time-of-flight measurement circuits in LIDAR systems.

For engineers reviewing the FMMT415TA datasheet, FMMT415TA pinout, FMMT415TA application, or FMMT415TA equivalent, key selection criteria include avalanche energy handling, VCES rating, pulse current capability, thermal resistance to lead (197°C/W), and AEC-Q101 qualification for automotive-grade reliability in pulsed power switching.

Technical Context

This device operates exclusively in avalanche mode-not linear or saturation-leveraging tightly controlled silicon process and low-inductance SOT23 packaging to sustain 260V across C–E while delivering sub-10ns rise-time current pulses. Its 2.5nH collector-emitter inductance and 8pF output capacitance minimize parasitic ringing during fast transitions.

Designed for single-pulse or low-duty-cycle (<2%) operation, it requires strict gate/base drive timing control to avoid second-breakdown failure. The 100µA ICBO leakage at 180V and 100°C ensures stable triggering margin in high-voltage pulse generators.

Key Specifications

ParameterValue and Actual Design Meaning
VCES260 V - Sustaining voltage in avalanche mode; defines maximum safe reverse-biased C–E voltage before uncontrolled breakdown
BVCEO100 V - Open-base collector-emitter breakdown; sets upper limit for non-avalanche switching applications
ICM (20ns)60 A - Peak pulsed current capability; enables nanosecond-scale high-power laser diode pulsing
Lce2.5 nH - Collector-emitter loop inductance; critical for minimizing voltage overshoot during fast current turn-off
RθJL197 °C/W - Junction-to-lead thermal resistance; supports rapid heat extraction through collector lead in pulsed operation
fT40 MHz - Transition frequency; confirms usable gain bandwidth for base-drive signal integrity up to ~10MHz
hFE25 min - DC current gain at 10mA/10V; sufficient for low-gain, high-speed base triggering without excessive drive power

Pinout & Package

SOT23 plastic package with matte tin-plated leads; UL 94V-0 rated molding compound; moisture sensitivity level 1; weight ≈ 0.008 g.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Current sink terminalLow-inductance path for avalanche current return; connected directly to ground plane in LIDAR driver PCB layout
2 (Base)Trigger control inputReceives fast-rising edge to initiate controlled avalanche; requires <10ns rise time and precise voltage threshold
3 (Collector)High-voltage power nodeConnected to charged storage capacitor (e.g., 200V); carries full 60A pulse; primary thermal conduction path to PCB

Key Features

FeatureDesign Value
Avalanche-optimized silicon processTight parameter distribution ensures consistent VCES ≥260V and repeatable 60A pulse initiation across production lots
Low-inductance SOT23 construction2.5nH collector-emitter loop inductance enables <1ns current rise time with minimal voltage overshoot
AEC-Q101 qualificationValidated for automotive temperature range (−55°C to +150°C) and mechanical stress; suitable for ADAS LIDAR modules
Green, halogen-free packaging<900ppm Br/Cl, <1000ppm Sb; meets IPC-1752A material declaration requirements for Tier-1 automotive supply chain

Applications

LIDAR Time-of-Flight DriverRadar Pulse Generator

Use Scenario: Driving 10–50Ω laser diode stacks in short-pulse (5–20ns), high-repetition-rate (10–100kHz) ranging systems.

IC Role / Device Role / Timing Role: Avalanche switch providing precisely timed, high-current optical pulses with sub-nanosecond jitter.

Use Value: Enables centimeter-level distance resolution via controlled 60A/20ns pulses with 260V VCES headroom for system voltage margin.

Use Scenario: Generating calibrated RF pulse envelopes in X-band automotive radar transmitters.

IC Role / Device Role / Timing Role: Fast-edge pulse source feeding into step-recovery diode or GaN amplifier trigger stage.

Use Value: Delivers <10ns rise/fall edges with 2.5nH internal inductance, reducing pulse distortion in 10GHz+ front-end timing paths.

Fast Edge Switch GeneratorHigh-Speed Pulse Generator

Use Scenario: Creating clean, high-amplitude logic-level transitions for test equipment calibration and oscilloscope trigger circuits.

IC Role / Device Role / Timing Role: Avalanche-mode switch replacing spark gaps or thyratrons in solid-state pulse modulators.

Use Value: Replaces vacuum devices with semiconductor reliability while maintaining 60A peak current and <1ns edge fidelity.

Use Scenario: Generating programmable-width (5–100ns), high-voltage (100–200V) pulses for particle detector readout and time-stamping.

IC Role / Device Role / Timing Role: Core pulse-forming element in compact, low-jitter digital delay generators.

Use Value: Achieves 100ps timing jitter over temperature due to tight VCES distribution and low RθJL thermal coupling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar avalanche transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
ZTX851Higher BVCEO (120V) but lower VCES (200V); no AEC-Q101 qualification; 35A ICM (20ns)Used in industrial pulse generators where automotive qualification is not requiredSelect when higher open-base breakdown is prioritized over avalanche energy handling and automotive compliance
BC846BStandard general-purpose NPN; VCEO = 65V; not avalanche-rated; max ICM = 100mA continuousOnly suitable for low-energy, non-avalanche switching; cannot replace FMMT415TA in pulse-power rolesReject for any application requiring >100V blocking or >1A pulsed current

Compared with ZTX851 and BC846B, FMMT415TA uniquely combines AEC-Q101 qualification, 260V VCES, and 60A avalanche current-making it the only viable option for automotive LIDAR and high-reliability radar pulse generation where controlled energy discharge and thermal robustness are mandatory.

Availability

FMMT415TA is available at Aetrix Electronics and suitable for LIDAR time-of-flight drivers, automotive radar pulse generators, and fast-edge switch applications requiring stable component supply across extended temperature ranges and high-reliability manufacturing programs.

Supply support for FMMT415TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-performance, high-reliability components for automotive, industrial, and computing markets.

The FMMT series targets high-speed, high-voltage pulse applications; these avalanche transistors were engineered to replace vacuum-based pulse switches in safety-critical sensing systems requiring nanosecond timing precision and AEC-Q101 validation.

FAQ

What is the maximum allowable pulse width for reliable avalanche operation?

The FMMT415TA is characterized for pulsed operation with ≤300µs width and ≤2% duty cycle per datasheet Note 8. For avalanche-mode use, the recommended maximum pulse width is 20ns to stay within second-breakdown safe operating area and maintain 60A peak current capability without thermal runaway.

Can FMMT415TA be used in linear amplification mode?

No-it is not characterized or guaranteed for linear operation. Its design, process, and absolute maximum ratings (e.g., VCEO = 100V, PD = 500mW) reflect optimization for transient avalanche switching only. Linear use risks premature failure due to localized heating and secondary breakdown.

Is the SOT23 package lead finish compatible with lead-free reflow profiles?

Yes-the matte tin-plated leads meet J-STD-020 moisture sensitivity level 1 and are qualified for standard lead-free reflow profiles (peak 260°C, 60s max above 217°C). The UL 94V-0 molding compound withstands repeated thermal cycling without delamination.

How does the 2.5nH collector-emitter inductance impact circuit layout?

This measured inductance sets the minimum practical loop area between collector and emitter traces. To preserve sub-1ns edge fidelity, PCB layout must minimize conductor length, avoid vias in the main pulse path, and use direct copper pours-exceeding 5mm total loop length adds >1nH, degrading pulse rise time and increasing voltage overshoot.

FMMT415TA Specifications

Product attributes
Attribute value
Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Transistor Type:
NPN - Avalanche Mode
Current - Collector (Ic) (Max):
500 mA
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 1mA, 10mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 10mA, 10V
Power - Max:
330 mW
Frequency - Transition:
40MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3

FMMT415TA FAQ

1.How can I place an order for FMMT415TA through Aetrix?

Please submit a Request for Quotation (RFQ) for FMMT415TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FMMT415TA reliable?

The price and inventory of FMMT415TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMMT415TA is usually 5 days.

3.What payment methods are accepted for FMMT415TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMMT415TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FMMT415TA?

FMMT415TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FMMT415TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FMMT415TA?

For technical support, including FMMT415TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMMT415TA requirements.

6.How does Aetrix verify that FMMT415TA is sourced from the original manufacturer or authorized distributors?

All FMMT415TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMMT415TA meets industry standards.

7.What is the process for return or replacement of FMMT415TA?

All FMMT415TA units undergo pre-shipment inspection (PSI). If there is an issue with FMMT415TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FMMT415TA part is unused and in its original packaging.

Return procedure for FMMT415TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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