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Diodes Incorporated FMMT415TC
- Part No.:
- FMMT415TC
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
FMMT415TC.pdf
- Description:
- TRANS NPN 100V 0.5A SOT-23-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,443
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Product details
Overview
FMMT415TC from Diodes Incorporated is an NPN avalanche transistor in SOT23 package, designed specifically for controlled avalanche-mode operation with 260V collector-emitter sustaining voltage (VCES), 100V breakdown voltage (BVCEO), and 60A peak avalanche current at 20ns pulse width. It delivers fast-edge high-current pulses for laser diode drivers in LIDAR ranging systems.
For engineers reviewing the FMMT415TC datasheet, FMMT415TC pinout, FMMT415TC application, or FMMT415TC equivalent, key selection criteria include avalanche energy handling, VCES rating, pulse current capability, thermal resistance (RθJL = 197°C/W), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
The FMMT415TC operates exclusively in avalanche mode-not linear or saturation-leveraging tightly controlled silicon process and low-inductance SOT23 packaging to achieve sub-nanosecond current rise times. Its BVCEO ≥ 100V ensures safe operation under transient overvoltage while maintaining stable second-breakdown margin.
Designed for pulsed power switching, it features 2.5nH collector-emitter inductance and 8pF output capacitance (Cobo), enabling precise timing control in high-speed pulse generators. The device sustains 60A avalanche current only under defined 20ns pulse conditions with external snubbing and energy-limiting circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 260 V - Sustaining voltage during controlled avalanche conduction; defines maximum repetitive pulse voltage before uncontrolled breakdown |
| BVCEO | 100 V - DC collector-emitter breakdown voltage; sets upper limit for non-avalanche bias conditions |
| ICM (20ns) | 60 A - Peak avalanche current capability; enables high-energy short-pulse generation in LIDAR driver stages |
| RθJL | 197 °C/W - Junction-to-lead thermal resistance; supports rapid heat extraction through collector lead in pulsed operation |
| fT | 40 MHz - Transition frequency; confirms usable gain bandwidth for fast-switching gate drive or pulse shaping circuits |
| Lce | 2.5 nH - Collector-emitter loop inductance; minimizes voltage overshoot and ringing during nanosecond-scale current transitions |
| hFE | 25 - DC current gain at 10mA/10V; sufficient for base drive scaling but not intended for linear amplification |
Pinout & Package
Package: SOT23 - surface-mount plastic package with matte tin-plated leads, UL 94V-0 rated molding compound, 0.008g mass, and moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Emission terminal for majority carriers | Low-inductance connection point for return path of avalanche current; tied to ground plane in LIDAR pulse circuits |
| 2 (Base) | Control electrode for carrier injection | Trigger input for avalanche initiation; requires fast-rising edge (≤5ns) and precise voltage threshold control |
| 3 (Collector) | High-voltage current collection node | Primary power terminal handling 260V sustain and 60A pulse; thermally coupled to PCB copper for transient heat dissipation |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-optimized silicon process | Tight parameter distribution ensures consistent VCES ≥ 260V and repeatable 60A pulse behavior across production lots |
| Low-inductance SOT23 construction | 2.5nH Lce enables <1ns current rise time with minimal voltage overshoot in pulse generator topologies |
| AEC-Q101 qualification | Validated for automotive temperature range (−55°C to +150°C) and mechanical stress, supporting radar and ADAS applications |
| Green, halogen-free packaging | Meets RoHS 2 and JEDEC J-STD-020 Level 1; eliminates bromine (<900ppm), chlorine (<900ppm), and antimony (<1000ppm) |
Applications
| LIDAR Ranging Systems | Radar Pulse Generators |
|---|---|
Use Scenario: Time-of-flight distance measurement using pulsed 905nm laser diodes in autonomous vehicle perception modules. IC Role / Device Role / Timing Role: Avalanche switch generating <10ns optical pulses with 60A peak current into laser diode anode. Use Value: Enables centimeter-level ranging resolution via precise pulse edge control and repeatable 260V sustain voltage. | Use Scenario: Short-pulse RF excitation in automotive 77GHz radar transmitters requiring sub-100ps jitter stability. IC Role / Device Role / Timing Role: Fast-edge pulse generator triggering GaN HEMT power stage with nanosecond timing accuracy. Use Value: Delivers 60A/20ns pulses with 2.5nH internal inductance to minimize timing skew and pulse distortion. |
| Fast Edge Switch Generators | High-Speed Pulse Test Equipment |
Use Scenario: Calibration signal source in automated test equipment for evaluating oscilloscope rise time and bandwidth. IC Role / Device Role / Timing Role: Primary avalanche switch in Marx generator topology producing 100V–200V, 1–5ns rise time pulses. Use Value: Provides repeatable 260V VCES and 60A ICM to ensure consistent pulse amplitude and edge fidelity across 10⁶+ cycles. | Use Scenario: Stimulus source in semiconductor parametric testers for characterizing ultrafast device switching behavior. IC Role / Device Role / Timing Role: Precision current pulse injector into DUT gate or drain terminals during dynamic parameter extraction. Use Value: Low 197°C/W RθJL allows sustained 1kHz pulse repetition without thermal runaway, enabling reliable parametric sweeps. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar avalanche transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN2010Z | Higher BVCEO (120V) but lower VCES (200V); 40A ICM at 20ns; SOT89 package | Less suitable for 260V LIDAR bus voltages; better for lower-voltage, higher-duty-cycle pulse trains | Select when system voltage ≤200V and thermal mass permits larger SOT89 footprint |
| BU806 | TO-126 package; 330V VCES; 100A ICM; no AEC-Q101 qualification | Requires heatsinking; unsuitable for automotive due to lack of stress qualification and larger board area | Select only for industrial pulse generators where size and qualification are secondary to peak current |
Compared with ZXTN2010Z and BU806, the FMMT415TC uniquely balances 260V VCES, 60A pulse current, AEC-Q101 compliance, and SOT23 form factor-making it the only qualified option for space-constrained, safety-critical automotive LIDAR pulse stages.
Availability
FMMT415TC is available at Aetrix Electronics and suitable for LIDAR ranging systems, automotive radar modules, fast-edge switch generators, and high-speed pulse test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for FMMT415TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets with ISO/TS 16949 and ISO 14001 certification.
The FMMT415TC belongs to Diodes' avalanche transistor product line, engineered specifically for nanosecond-scale pulse generation in safety-critical sensing systems-not general-purpose switching or amplification.
FAQ
What is the maximum allowable pulse width for avalanche operation of the FMMT415TC?
The FMMT415TC is characterized for 20ns pulse width at 60A peak current, as specified in the absolute maximum ratings table. Longer pulses require derating based on thermal impedance curves in the datasheet-exceeding 20ns without external energy limiting risks second-breakdown failure. Pulse duty cycle must remain ≤2% to avoid junction overheating.
Can the FMMT415TC be used in linear amplifier configurations?
No-the FMMT415TC is explicitly designed and qualified only for avalanche-mode switching. Its hFE of 25 and VCE(sat) of 500mV reflect optimization for pulsed conduction, not linear gain. Using it in active-region amplification violates design intent and risks premature failure due to localized hot-spot formation and inadequate SOA margins.
Is the FMMT415TC pin-compatible with standard SOT23 NPN transistors like BC847?
No-while both use SOT23 packages, the FMMT415TC has emitter-base-collector pinout (1-E, 2-B, 3-C), whereas BC847 follows emitter-collector-base (1-E, 2-C, 3-B). Swapping them causes immediate reverse-bias damage to the base-emitter junction. Layout verification against Diodes' AP02002 package drawing is mandatory.
Does the AEC-Q101 qualification cover full temperature range operation in avalanche mode?
Yes-AEC-Q101 testing includes temperature cycling (−55°C to +150°C), high-temperature operating life, and unbiased high-humidity storage, all performed with the device biased in its intended avalanche configuration. The 260V VCES and 60A ICM ratings are guaranteed across −55°C to +150°C when operated within pulse width and duty cycle limits.
FMMT415TC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Avalanche Mode
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 25 @ 10mA, 10V
- Power - Max:
- 330 mW
- Frequency - Transition:
- 40MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
FMMT415TC FAQ
1.How can I place an order for FMMT415TC through Aetrix?
Please submit a Request for Quotation (RFQ) for FMMT415TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FMMT415TC reliable?
The price and inventory of FMMT415TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMMT415TC is usually 5 days.
3.What payment methods are accepted for FMMT415TC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMMT415TC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FMMT415TC?
FMMT415TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FMMT415TC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FMMT415TC?
For technical support, including FMMT415TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMMT415TC requirements.
6.How does Aetrix verify that FMMT415TC is sourced from the original manufacturer or authorized distributors?
All FMMT415TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMMT415TC meets industry standards.
7.What is the process for return or replacement of FMMT415TC?
All FMMT415TC units undergo pre-shipment inspection (PSI). If there is an issue with FMMT415TC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FMMT415TC part is unused and in its original packaging.
Return procedure for FMMT415TC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FMMT415TC Tags
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Diodes Incorporated
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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