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Diodes Incorporated FMMT415TD
- Part No.:
- FMMT415TD
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
FMMT415TD.pdf
- Description:
- TRANS NPN 100V 0.5A SOT-23-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,808
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Product details
Overview
FMMT415TD from Diodes Incorporated is an NPN avalanche transistor in SOT23 package, designed specifically for controlled avalanche-mode operation with 260V collector-emitter sustaining voltage (VCES), 100V breakdown under open-base conditions (BVCEO), and 60A peak pulsed avalanche current at 20ns pulse width. It delivers fast-edge high-current pulses for laser diode drivers in LIDAR ranging systems.
For engineers reviewing the FMMT415TD datasheet, FMMT415TD pinout, FMMT415TD application, or FMMT415TD equivalent, key selection criteria include avalanche energy handling, VCES rating, pulse current capability, thermal resistance (RθJL = 197°C/W), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
This device operates in second-breakdown-limited avalanche mode-not standard linear or switching mode-requiring precise gate/base drive timing and external energy-limiting components. Its low 2.5nH collector-emitter inductance and tight process control enable sub-nanosecond current rise times.
It is characterized under pulsed conditions (≤300µs width, ≤2% duty cycle) for hFE, VCE(sat), and IUSB. Thermal derating follows a defined curve on 15mm×15mm 1oz copper FR4, with RθJA = 250°C/W and maximum junction temperature of +150°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 260 V - Sustaining voltage during controlled avalanche conduction; defines maximum energy-handling headroom before destructive failure |
| BVCEO | 100 V - Open-base collector-emitter breakdown; sets safe DC bias limit for non-avalanche pre-charge or hold phases |
| ICM (20ns) | 60 A - Peak pulsed current capability; enables high-power optical pulse generation in LIDAR transmitters |
| Lce | 2.5 nH - Low collector-emitter inductance; minimizes voltage overshoot and improves edge fidelity in fast avalanche switching |
| RθJL | 197 °C/W - Junction-to-lead thermal resistance; supports localized heat extraction via collector pad for repetitive pulse operation |
| fT | 40 MHz - Transition frequency; confirms usable gain bandwidth for base-drive signal integrity up to ~10MHz |
| hFE | 25 min - Minimum DC current gain at 10mA/10V; sufficient for low-gain avalanche trigger stage design |
Pinout & Package
Package: SOT23 - surface-mount plastic package with matte tin-plated leads, UL 94V-0 rated, moisture sensitivity level 1, weight ≈0.008 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Emitter terminal | Low-inductance return path for avalanche current; connected to ground plane for minimal loop inductance |
| 2 (Base) | Control input | Trigger node for avalanche initiation; requires fast-rising, low-impedance drive to ensure uniform second-breakdown onset |
| 3 (Collector) | High-voltage output | Primary current output terminal; soldered to large copper area for thermal and inductive performance |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-optimized silicon process | Tight parameter distribution ensures consistent VCES and IUSB across production lots for reliable pulse energy calibration |
| Low Lce (2.5 nH) | Reduces voltage ringing during avalanche turn-off, enabling stable 100+ V/ns dV/dt without external snubbing |
| AEC-Q101 qualified | Validated for automotive under-hood environments including temperature cycling, mechanical shock, and humidity exposure |
| Green, halogen-free construction | Meets <900 ppm Br/Cl and <1000 ppm Sb; compliant with automotive OEM material declarations and RoHS 2 (2011/65/EU) |
Applications
| LIDAR Transmitter Stage | Radar Pulse Generator |
|---|---|
Use Scenario: Driving 850nm or 905nm laser diodes in time-of-flight distance measurement modules. IC Role / Device Role / Timing Role: Avalanche switch generating nanosecond-scale optical pulses with precise timing jitter & repeatable amplitude. Use Value: 260V VCES and 60A ICM support >1W peak optical power into low-impedance laser stacks while maintaining sub-100ps edge fidelity. | Use Scenario: Generating high-voltage, fast-rise-time pulses for ultra-wideband (UWB) radar front-ends. IC Role / Device Role / Timing Role: High-speed pulse generator core operating in controlled avalanche to produce <1ns rise time RF pulses. Use Value: 2.5nH Lce and 197°C/W RθJL allow burst-mode operation at 10kHz repetition rate without thermal runaway or parameter drift. |
| Fast Edge Switch Generator | High-Speed Pulse Generator |
Use Scenario: Creating calibrated fast-edge reference signals for oscilloscope calibration and jitter analysis equipment. IC Role / Device Role / Timing Role: Precision avalanche switch delivering repeatable 100–500ps rise/fall edges into 50Ω loads. Use Value: Tight VCES distribution (260V ±0%) and low Lce enable deterministic edge timing with <1.5ps RMS jitter over 1k cycles. | Use Scenario: Serving as the active element in compact, solid-state Marx generator stages for pulsed power test fixtures. IC Role / Device Role / Timing Role: Repetitively triggered avalanche switch stacking voltage across multiple stages for >1kV pulse formation. Use Value: AEC-Q101 qualification ensures long-term reliability under repeated high-dV/dt stress and thermal cycling in lab-grade pulse sources. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar avalanche transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN2010Z | Higher BVCEO (120V) but lower VCES (200V); 40A ICM; SOT89 package | Less suitable for >200V avalanche energy storage; better for higher-duty-cycle switching | Select when thermal mass requirement exceeds SOT23 limits and VCES margin >60V is not required |
| BU806 | TO-126 package; 800V VCEO; no specified avalanche rating or ICM; intended for linear HV amplification | Not validated for controlled avalanche; lacks pulse current specs or second-breakdown data | Only consider for non-avalanche, high-voltage analog applications where fast edge generation is not needed |
Compared with ZXTN2010Z and BU806, FMMT415TD uniquely combines AEC-Q101 qualification, 260V VCES, 60A ICM, and SOT23 form factor-making it the only choice for space-constrained, automotive-grade LIDAR pulse generators requiring deterministic avalanche behavior.
Availability
FMMT415TD is available at Aetrix Electronics and suitable for LIDAR transmitter modules, automotive radar subsystems, and precision pulse generator instruments requiring stable component supply, traceable lot history, and long-term lifecycle support.
Supply support for FMMT415TD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability, application-optimized components for automotive, industrial, and computing markets.
FMMT415TD belongs to Diodes' avalanche transistor product line-engineered explicitly for controlled second-breakdown operation in pulsed power and time-critical optical driver applications.
FAQ
What is the maximum allowable pulse width for avalanche operation?
The FMMT415TD is characterized for avalanche operation with pulse widths ≤20ns for its rated 60A peak current. Longer pulses increase junction temperature and risk thermal runaway; operation beyond 20ns requires derating per the transient thermal impedance curve in DS33084 Rev. 6-2, page 4, and must stay within the second-breakdown safe operating area (SOA).
Can FMMT415TD be used in linear amplifier configurations?
No-it is not optimized or characterized for linear operation. Its design prioritizes uniform avalanche onset and energy handling, not gain linearity or low distortion. Using it outside avalanche mode risks premature failure due to localized hot-spotting in the emitter-base junction region.
Is the SOT23 footprint compatible with automated pick-and-place equipment?
Yes-the SOT23 package meets JEDEC MO-178 standards, with standardized 0.95mm lead pitch and 2.4mm body width. Recommended pad layout (AP02001) and stencil design ensure >99.5% placement yield using Class III placement accuracy equipment and standard reflow profiles.
Does FMMT415TD require external snubbing components?
Not inherently-its 2.5nH Lce and tight parameter distribution minimize voltage overshoot. However, snubbers may be needed depending on load inductance and PCB layout parasitics. Empirical testing with the target load is required; Diodes recommends verifying dV/dt and ringing amplitude using a 500MHz+ oscilloscope and matched probe.
FMMT415TD Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Avalanche Mode
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 25 @ 10mA, 10V
- Power - Max:
- 330 mW
- Frequency - Transition:
- 40MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
FMMT415TD FAQ
1.How can I place an order for FMMT415TD through Aetrix?
Please submit a Request for Quotation (RFQ) for FMMT415TD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FMMT415TD reliable?
The price and inventory of FMMT415TD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMMT415TD is usually 5 days.
3.What payment methods are accepted for FMMT415TD?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMMT415TD transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FMMT415TD?
FMMT415TD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FMMT415TD order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FMMT415TD?
For technical support, including FMMT415TD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMMT415TD requirements.
6.How does Aetrix verify that FMMT415TD is sourced from the original manufacturer or authorized distributors?
All FMMT415TD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMMT415TD meets industry standards.
7.What is the process for return or replacement of FMMT415TD?
All FMMT415TD units undergo pre-shipment inspection (PSI). If there is an issue with FMMT415TD, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FMMT415TD part is unused and in its original packaging.
Return procedure for FMMT415TD:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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