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Diodes Incorporated FMMT416TA
- Part No.:
- FMMT416TA
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
FMMT416TA.pdf
- Description:
- TRANS NPN 100V 0.5A SOT-23
- Quantity:
- Payment:
- Shipping:
Inventory:8,814
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Product details
Overview
FMMT416TA from Diodes Incorporated is an NPN high-voltage avalanche transistor in SOT23 package, rated for 315 V collector-base breakdown (BVCBO), 100 V collector-emitter breakdown (BVCEO), and capable of 60 A peak avalanche current. It is silicon planar-structured, optimized for fast-edge, high-current pulse generation in avalanche mode, with 2.5 nH collector-emitter inductance and 40 MHz transition frequency (fT). Used in LIDAR laser diode drivers and radar pulse generators.
For engineers reviewing the FMMT416TA datasheet, FMMT416TA pinout, FMMT416TA application, or FMMT416TA equivalent, key selection criteria include avalanche energy handling, voltage standoff under pulsed second breakdown (IUSB = 25–35 A), thermal resistance (RθJL = 197 °C/W), and SOT23 (Type DN) lead-frame compatibility with high-speed PCB layout.
Technical Context
The FMMT416TA operates exclusively in controlled avalanche mode-not linear or saturation switching-leveraging tight process control to sustain repetitive high-current pulses (≤20 ns width) without destructive second breakdown. Its low-inductance SOT23 (Type DN) package and 2.5 nH Lce minimize voltage overshoot during fast turn-off.
It delivers 100–35 A current in second breakdown across 200–250 V collector voltage with 620 pF load capacitance, and exhibits hFE ≥100 at IC = 10 mA / VCE = 10 V. ESD robustness includes 4 kV HBM and 400 V MM ratings per JEDEC JESD22-A114/A115.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVCBO | 315 V - ensures safe operation with >310 V reverse bias on collector-base junction during avalanche triggering |
| BVCEO | 100 V - defines maximum sustainable collector-emitter voltage before uncontrolled breakdown in circuit |
| IUSB | 25–35 A - quantifies pulsed current capability in second breakdown region at VC = 200–250 V with 620 pF load |
| Lce | 2.5 nH - limits voltage ringing and overshoot during nanosecond-scale avalanche current rise/fall |
| fT | 40 MHz - supports high-frequency gain stability in driver-stage amplification prior to avalanche trigger |
| RθJL | 197 °C/W - enables direct thermal path from junction to solder point on FR-4 PCB for pulsed power dissipation |
| ESD HBM | 4,000 V - provides robust handling margin during board assembly and system integration |
Pinout & Package
Package: SOT23 (Type DN), molded green plastic, UL 94V-0 rated, matte tin-plated leads, 0.008 g weight. Moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal | Low-inductance connection point for return path in avalanche pulse loop; tied to ground plane in LIDAR driver layouts |
| 2 (Base) | Control input | Triggers avalanche conduction via precise current pulse; requires <800 mV VBE(sat) drive at IB = 1 mA |
| 3 (Collector) | High-voltage output node | Carries 60 A peak avalanche current; designed for direct connection to laser diode anode or pulse transformer primary |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-optimized structure | Guarantees repeatable, non-destructive 60 A peak current pulses under controlled VCB stress |
| Ultra-low Lce (2.5 nH) | Reduces voltage overshoot by >30% vs. standard SOT23 transistors in 10 ns edge applications |
| High BVCBO (315 V) | Enables use in 300 V-class pulse generators without external snubbing or clamping |
| Lead-free & halogen-free | Meets RoHS 3 (2015/863/EU) and automotive "Green" requirements (<900 ppm Br/Cl, <1000 ppm Sb) |
Applications
| LIDAR Laser Diode Driver | Radar Pulse Generator |
|---|---|
Use Scenario: Time-of-flight distance measurement using pulsed 905 nm laser diodes. IC Role / Device Role / Timing Role: Avalanche switch delivering sub-10 ns current pulses to laser diode anode. Use Value: 60 A peak current enables high optical peak power; 2.5 nH Lce minimizes pulse distortion critical for cm-level ranging accuracy. |
Use Scenario: Short-pulse transmitter in automotive 77 GHz radar front-end. IC Role / Device Role / Timing Role: Fast-edge pulse generator driving GaAs MMIC gate or PIN diode switch. Use Value: 315 V BVCBO supports high-voltage pulse amplitude; 40 MHz fT ensures stable pre-avalanche gain control. |
| Fast Edge Switch Generator | High-Speed Pulse Generator |
Use Scenario: Calibration signal source for oscilloscope timebase verification. IC Role / Device Role / Timing Role: Nanosecond-rise avalanche switch feeding 50 Ω coaxial output. Use Value: 100 V BVCEO and 25–35 A IUSB enable clean 1–5 ns edges into resistive loads without oscillation. |
Use Scenario: Trigger source for photomultiplier tubes or spark-gap systems. IC Role / Device Role / Timing Role: Repetitively pulsed high-current switch in capacitor discharge circuit. Use Value: RθJL = 197 °C/W allows 500 mW average dissipation during 1 kHz burst mode; SOT23 footprint simplifies high-density layout. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage avalanche transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN2012Z | BVCBO = 200 V, IUSB = 15 A, Lce ≈ 4.1 nH, SOT89 package | Lower voltage/current capability; unsuitable for >250 V avalanche circuits | Select only for lower-energy, cost-sensitive pulse applications where 315 V standoff is not required |
| BUV27 | TO-126 package, BVCBO = 350 V, ICM = 10 A (non-avalanche rated), no IUSB spec | Not qualified for repetitive avalanche operation; higher inductance limits edge speed | Use only in DC-switched or single-shot high-voltage applications-not for nanosecond pulse trains |
Compared with ZXTN2012Z and BUV27, the FMMT416TA uniquely combines SOT23 scalability, 315 V BVCBO, and verified 60 A avalanche current-making it irreplaceable in compact, high-repetition-rate LIDAR and radar pulse stages where inductance and voltage margin are design-critical.
Availability
FMMT416TA is available at Aetrix Electronics and suitable for LIDAR systems, automotive radar modules, fast-edge test equipment, and high-speed pulse generator designs requiring stable component supply and traceable sourcing.
Supply support for FMMT416TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.
The FMMT416TA belongs to Diodes' high-voltage bipolar transistor product line, engineered specifically for controlled avalanche-mode pulse generation in safety-critical sensing and timing systems-not general-purpose switching.
FAQ
Is FMMT416TA qualified for automotive applications?
No-FMMT416TA is not AEC-Q101 qualified. Diodes states that automotive-grade variants require specific change control, PPAP capability, and IATF 16949 manufacturing; this part lacks those certifications and is marked "NOT RECOMMENDED FOR NEW DESIGNS." Engineers targeting automotive must contact Diodes for qualified alternatives.
What is the maximum allowable pulse repetition rate for reliable avalanche operation?
The datasheet specifies pulse width ≤300 µs and duty cycle ≤2% for hFE and VCE(sat) measurements-but does not define a maximum repetition rate for avalanche mode. Safe operation depends on thermal accumulation: with RθJL = 197 °C/W and PD = 500 mW, sustained 1 kHz bursts require careful PCB copper area design and ambient temperature control below +85°C.
Can FMMT416TA be used in linear amplifier configurations?
No-it is explicitly designed for avalanche-mode switching, not linear operation. Its hFE is specified only under pulsed conditions (≤2% duty cycle), and its BVCEO = 100 V is insufficient for typical Class-A amplifier rails. Using it outside avalanche mode risks premature failure due to secondary breakdown or thermal runaway.
Does the SOT23 (Type DN) package support reflow soldering per JEDEC J-STD-020?
Yes-the package has Moisture Sensitivity Level 1 per J-STD-020, meaning it may be stored indefinitely at ≤30°C/85% RH and is compatible with standard Pb-free reflow profiles (peak 260°C, 20–40 sec above 217°C) without baking or special handling.
FMMT416TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Avalanche Mode
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 10V
- Power - Max:
- 500 mW
- Frequency - Transition:
- 40MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23 (Type DN)
FMMT416TA FAQ
1.How can I place an order for FMMT416TA through Aetrix?
Please submit a Request for Quotation (RFQ) for FMMT416TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FMMT416TA reliable?
The price and inventory of FMMT416TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMMT416TA is usually 5 days.
3.What payment methods are accepted for FMMT416TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMMT416TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FMMT416TA?
FMMT416TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FMMT416TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FMMT416TA?
For technical support, including FMMT416TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMMT416TA requirements.
6.How does Aetrix verify that FMMT416TA is sourced from the original manufacturer or authorized distributors?
All FMMT416TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMMT416TA meets industry standards.
7.What is the process for return or replacement of FMMT416TA?
All FMMT416TA units undergo pre-shipment inspection (PSI). If there is an issue with FMMT416TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FMMT416TA part is unused and in its original packaging.
Return procedure for FMMT416TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FMMT416TA Tags
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