My Inquiry
My Account
Diodes Incorporated FMMT416TD
- Part No.:
- FMMT416TD
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
FMMT416TD.pdf
- Description:
- TRANS NPN 100V 0.5A SOT-23-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,627
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
FMMT416TD from Diodes Incorporated is an NPN high-voltage avalanche transistor in SOT23 package, designed specifically for controlled avalanche-mode operation with 315 V collector-base breakdown (BVCBO), 100 V collector-emitter breakdown (BVCEO), and 60 A peak avalanche current capability. It delivers fast-edge, high-current pulses for laser diode drivers in LIDAR ranging systems and radar pulse generators.
For engineers reviewing the FMMT416TD datasheet, FMMT416TD pinout, FMMT416TD application, or FMMT416TD equivalent, key selection criteria include avalanche energy handling, sub-3 ns switching edge fidelity, low 2.5 nH collector-emitter inductance, and thermal resistance of 197 °C/W to leads - critical for repetitive high-power pulse reliability.
Technical Context
The FMMT416TD employs a silicon planar bipolar structure optimized for stable, repeatable avalanche conduction under pulsed conditions. Its tight process control ensures consistent second-breakdown current (IUSB = 25–35 A at VC = 200–250 V) and low parasitic inductance (Lce = 2.5 nH), enabling nanosecond-scale current rise times without destructive snapback.
It operates outside standard linear or saturation regions, relying on controlled avalanche multiplication rather than forward-active gain. The device requires precise gate/base drive timing and external snubbing to manage voltage overshoot and thermal transients during 20 ns pulse-width operation at up to 60 A peak.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVCBO | 315 V - Ensures safe blocking of high-voltage transients before avalanche initiation in laser driver flyback stages. |
| BVCEO | 100 V - Defines maximum sustainable collector-emitter voltage under active avalanche conduction. |
| ICM (20 ns) | 60 A - Peak pulsed current capability directly usable in short-pulse LIDAR transmitter stages. |
| Lce | 2.5 nH - Low collector-emitter inductance minimizes voltage ringing and enables <3 ns current rise time. |
| RθJL | 197 °C/W - Thermal resistance to solder point supports localized heat extraction during 2% duty-cycle pulsing. |
| fT | 40 MHz - Transition frequency confirms sufficient small-signal bandwidth for base drive fidelity in fast-switching circuits. |
| hFE | 100 (at IC = 10 mA) - Provides predictable base current scaling for avalanche trigger control circuits. |
Pinout & Package
Package: SOT23 (Type DN), surface-mount, lead-free, halogen-free molded plastic housing with matte tin-plated leads; moisture sensitivity level 1 per J-STD-020; weight ≈ 0.008 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal during avalanche conduction | Low-inductance path for return current; connected to ground plane for minimal loop inductance. |
| 2 (Base) | Control electrode for avalanche initiation timing | Receives fast-rising trigger pulse; requires low-impedance drive to overcome minority-carrier delay. |
| 3 (Collector) | High-voltage, high-current output node | Connected to laser diode anode or pulse transformer primary; carries full avalanche current with minimal voltage drop. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated voltage withstand | BVCBO > 315 V enables use in 250–300 V pulse charging circuits without external clamping. |
| Controlled second-breakdown behavior | IUSB = 25–35 A across 200–250 V ensures repeatable, non-destructive avalanche energy delivery. |
| Ultra-low package inductance | Lce = 2.5 nH reduces di/dt-induced overshoot, supporting clean 1–2 ns current edges in LIDAR drivers. |
| Thermal performance to leads | RθJL = 197 °C/W allows direct thermal coupling to PCB copper pour for pulse-duty thermal management. |
Applications
| LIDAR Ranging Transmitter | Radar Pulse Generator |
|---|---|
Use Scenario: Short-pulse (<20 ns), high-current drive for 905 nm or 1550 nm laser diodes in automotive or industrial time-of-flight distance measurement. IC Role / Device Role / Timing Role: Avalanche switch delivering precisely timed 60 A pulses into laser diode anode with sub-nanosecond edge control. Use Value: Enables centimeter-level resolution at >100 m range by sustaining >25 A avalanche current with <3 ns rise time and minimal jitter. | Use Scenario: High-voltage pulse generation for ultra-wideband (UWB) radar front-ends requiring fast rise/fall edges and high peak power. IC Role / Device Role / Timing Role: Fast-edge avalanche switch generating 100–250 V, 20–60 A pulses into antenna-coupled transmission lines. Use Value: Delivers 35 A avalanche current at 250 V with 2.5 nH internal inductance, minimizing pulse distortion and preserving UWB spectral integrity. |
| Fast Edge Switch Generator | High-Speed Pulse Generator |
Use Scenario: Precision timing reference generation in test equipment, where deterministic sub-5 ns edge transitions are required for calibration triggers. IC Role / Device Role / Timing Role: Avalanche-mode switch providing repeatable, low-jitter current steps into 50 Ω loads for edge generation. Use Value: Achieves <3 ns rise time with 100 V/60 A capability and 2.5 nH Lce, enabling accurate jitter characterization down to 10 ps RMS. | Use Scenario: Repetitive nanosecond pulse sources for particle detector readout, plasma ignition, or time-domain reflectometry. IC Role / Device Role / Timing Role: High-repetition-rate avalanche switch operating at ≤2% duty cycle with thermal management via collector-lead conduction. Use Value: Supports 10 kHz+ pulse repetition with 60 A peak and 197 °C/W RθJL, enabling stable long-duration burst operation on FR-4 PCBs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage avalanche transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN2010Z | BVCBO = 250 V (vs. 315 V); ICM = 40 A (vs. 60 A); Lce ≈ 3.2 nH | Lower voltage/current headroom limits use in >250 V LIDAR stages; less suitable for 300 V bus-fed pulse chargers. | Select only if system voltage remains ≤230 V and peak current demand stays below 40 A. |
| DMBT3725A | BVCEO = 80 V (vs. 100 V); no published IUSB or avalanche energy rating; fT = 250 MHz | Designed for RF switching, not avalanche operation; lacks guaranteed second-breakdown performance or pulse ruggedness data. | Not recommended for avalanche-mode use; consider only for non-avalanche high-speed switching below 80 V. |
Compared with ZXTN2010Z and DMBT3725A, the FMMT416TD uniquely provides validated 315 V blocking, 60 A avalanche current, and 2.5 nH inductance - making it the only option among the three qualified for 300 V-class LIDAR transmitter stages requiring repeatable nanosecond pulse fidelity.
Availability
FMMT416TD is available at Aetrix Electronics and suitable for LIDAR ranging transmitters, radar pulse generators, fast edge switch generators, and high-speed pulse generators requiring stable component supply and traceable sourcing for industrial and automotive-grade programs.
Supply support for FMMT416TD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
The FMMT416TD belongs to Diodes' high-voltage avalanche transistor product line, engineered specifically for nanosecond-pulse applications demanding controlled, repeatable avalanche conduction - not general-purpose switching.
FAQ
Is the FMMT416TD rated for continuous conduction or only pulsed avalanche operation?
The FMMT416TD is explicitly designed and characterized for pulsed avalanche-mode operation only. Its absolute maximum ratings specify a 20 ns pulse width and ≤2% duty cycle. Continuous DC operation exceeds thermal and second-breakdown limits - sustained conduction will cause immediate failure. All design use must follow the pulsed conditions defined in DS42112 Rev. 3.
What is the significance of the "SOT23 (Type DN)" package designation?
SOT23 (Type DN) refers to Diodes' proprietary variant of the standard SOT23 footprint with tighter dimensional tolerances and optimized leadframe geometry for reduced inductance. It features a 0.95 mm lead pitch (e), 3.00 mm body length (D), and 2.42 mm body width (E), verified in DS42112 package outline drawings - distinct from generic SOT23 or SOT-23-3.
Does the FMMT416TD meet AEC-Q101 qualification for automotive use?
No - the FMMT416TD is not AEC-Q101 qualified. The datasheet states that automotive-qualified versions require specific change control and PPAP capability, and directs users to contact Diodes for such parts. This device is intended for industrial and commercial LIDAR/radar systems, not safety-critical automotive ECUs.
Why does the datasheet state "NOT RECOMMENDED FOR NEW DESIGNS"?
Diodes has issued this notice due to planned obsolescence or replacement with newer avalanche transistors offering improved parameters (e.g., higher IUSB, lower Lce, or AEC-Q101 qualification). Existing designs may continue using FMMT416TD, but new projects should consult Diodes for approved alternatives like the FMMT417TD or next-generation avalanche devices.
FMMT416TD Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Avalanche Mode
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 100mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 100 @ 10mA, 10V
- Power - Max:
- 500 mW
- Frequency - Transition:
- 40MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
FMMT416TD FAQ
1.How can I place an order for FMMT416TD through Aetrix?
Please submit a Request for Quotation (RFQ) for FMMT416TD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FMMT416TD reliable?
The price and inventory of FMMT416TD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMMT416TD is usually 5 days.
3.What payment methods are accepted for FMMT416TD?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMMT416TD transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FMMT416TD?
FMMT416TD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FMMT416TD order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FMMT416TD?
For technical support, including FMMT416TD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMMT416TD requirements.
6.How does Aetrix verify that FMMT416TD is sourced from the original manufacturer or authorized distributors?
All FMMT416TD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMMT416TD meets industry standards.
7.What is the process for return or replacement of FMMT416TD?
All FMMT416TD units undergo pre-shipment inspection (PSI). If there is an issue with FMMT416TD, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FMMT416TD part is unused and in its original packaging.
Return procedure for FMMT416TD:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FMMT416TD Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
