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Diodes Incorporated FMMT417TA
- Part No.:
- FMMT417TA
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
FMMT417TA.pdf
- Description:
- TRANS NPN 100V 0.5A SOT-23-3
- Quantity:
- Payment:
- Shipping:
Inventory:8,867
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Product details
Overview
FMMT417TA from Diodes Incorporated is an NPN avalanche transistor in SOT23 package, designed specifically for high-voltage, fast-pulse avalanche-mode operation with BVCES ≥ 320 V, 60 A peak avalanche current (20 ns pulse), and VCEO > 100 V. It delivers nanosecond-edge pulses for laser diode drivers in LIDAR ranging systems and radar transmitters.
For engineers reviewing the FMMT417TA datasheet, FMMT417TA pinout, FMMT417TA application, or FMMT417TA equivalent, key selection criteria include avalanche energy handling, collector-emitter breakdown margin, thermal resistance (RθJL = 197 °C/W), and SOT23 lead inductance (Lce = 2.5 nH) in high-dV/dt pulse circuits.
Technical Context
This device operates exclusively in controlled avalanche mode-not linear or saturation switching-leveraging tight process control to sustain repetitive 20 ns pulses at up to 60 A with minimal second-breakdown risk. Its 320 V BVCES rating enables safe operation under high-energy voltage overshoots typical in inductive pulse discharge circuits.
Designed for low-inductance pulse delivery, it features a standard SOT23 footprint with optimized internal layout and <2.5 nH collector-emitter inductance. The 197 °C/W junction-to-lead thermal resistance supports transient power dissipation up to 500 mW under defined PCB mounting conditions (15 mm × 15 mm 1 oz Cu).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVCES | ≥320 V - Withstands 320 V reverse bias across collector-base before avalanche onset; critical for high-voltage pulse clamping. |
| Peak Avalanche Current | 60 A (20 ns pulse) - Delivers high-current, nanosecond-rise pulses for LIDAR transmitter stages. |
| VCEO | >100 V - Ensures safe operation under DC-biased collector-emitter stress during non-avalanche standby. |
| Lce | 2.5 nH - Low collector-emitter inductance minimizes voltage overshoot and ringing in fast-switching pulse paths. |
| RθJL | 197 °C/W - Enables effective heat transfer from junction to solder point on PCB, supporting pulsed thermal management. |
| fT | 40 MHz - Confirms usable high-frequency gain for pulse shaping and driver-stage amplification. |
Pinout & Package
SOT23-3 plastic surface-mount package with matte tin-plated leads, UL 94V-0 rated molding compound, and moisture sensitivity level 1 per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal | Low-impedance return path for avalanche current; connected to ground plane for minimal loop inductance. |
| 2 (Base) | Control input | Triggers avalanche conduction via precise voltage pulse; requires low-capacitance drive due to fT = 40 MHz. |
| 3 (Collector) | High-voltage output node | Carries 320 V-rated avalanche current; routed over isolated copper to maintain creepage/clearance in HV designs. |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-optimized silicon process | Tight parameter distribution ensures repeatable 60 A pulse amplitude and sub-5 ns rise time across production lots. |
| Low-inductance SOT23 packaging | 2.5 nH Lce enables clean pulse edges without external snubbing in LIDAR driver stacks. |
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling (-55°C to +150°C) and HBM ESD (4 kV). |
| Green, halogen-free construction | Meets RoHS 2 and JEDEC J-STD-020 Level 1; <900 ppm Br/Cl, <1000 ppm Sb for environmentally compliant manufacturing. |
Applications
| LIDAR Ranging Systems | Radar Transmitter Stages |
|---|---|
Use Scenario: Pulsed 905 nm laser diode excitation in automotive time-of-flight distance measurement. IC Role / Device Role / Timing Role: Avalanche switch generating 20 ns, 60 A current pulses into laser diode anode. Use Value: 320 V BVCES headroom prevents premature breakdown during laser diode reverse recovery spikes. | Use Scenario: High-speed pulse generation for X-band pulse-Doppler radar modulators. IC Role / Device Role / Timing Role: Fast-edge avalanche switch driving gate of GaN RF power stage. Use Value: 2.5 nH Lce minimizes pulse distortion, preserving sub-nanosecond timing accuracy required for Doppler resolution. |
| Fast Edge Pulse Generators | High-Speed Test Equipment |
Use Scenario: Compact nanosecond pulse source for semiconductor parametric testers and TDR calibration. IC Role / Device Role / Timing Role: Core avalanche element in Marx generator cell for sub-10 ns edge generation. Use Value: 197 °C/W RθJL allows repeated 500 mW pulse bursts without thermal runaway on standard FR4. | Use Scenario: Trigger pulse injector in automated test equipment for validating high-speed logic timing margins. IC Role / Device Role / Timing Role: Precision avalanche switch synchronizing multi-channel digital pattern generators. Use Value: 40 MHz fT supports stable small-signal gain for pulse conditioning prior to final avalanche stage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar avalanche transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN2012Z | BVCES = 250 V (vs. 320 V); 40 A peak avalanche current; SOT89 package (higher thermal mass but larger footprint) | Lower voltage headroom limits use in >250 V pulse rails; better steady-state thermal handling for longer pulses | Select when system voltage is ≤250 V and pulse duration exceeds 50 ns. |
| BC847B | Not avalanche-rated; VCEO = 45 V; max ICM = 100 mA; no BVCES spec; general-purpose small-signal transistor | Cannot operate in controlled avalanche mode; unsuitable for high-energy pulse generation | Only acceptable for low-voltage, non-avalanche biasing or pre-driver stages-not as direct replacement. |
Compared with ZXTN2012Z and BC847B, FMMT417TA uniquely combines 320 V BVCES, 60 A avalanche capability, and SOT23 form factor-enabling compact, high-reliability LIDAR pulse stages where voltage margin and edge speed are non-negotiable.
Availability
FMMT417TA is available at Aetrix Electronics and suitable for LIDAR ranging systems, radar transmitters, fast-edge pulse generators, and high-speed test equipment requiring stable component supply and AEC-Q101-compliant sourcing.
Supply support for FMMT417TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
The FMMT417TA belongs to Diodes' avalanche transistor product line, engineered specifically for nanosecond-pulse generation in safety-critical sensing systems where voltage robustness and edge fidelity are essential.
FAQ
What is the maximum allowable pulse width for reliable avalanche operation?
The FMMT417TA is characterized for 20 ns pulses at 60 A, with second-breakdown limits specified at VC = 250 V and CCE = 620 pF. Longer pulses require derating per the transient thermal impedance curve; continuous avalanche operation is not supported. Pulse width must remain ≤300 µs with ≤2% duty cycle to avoid thermal runaway.
Can FMMT417TA be used in linear amplifier configurations?
No-it is not characterized or qualified for linear operation. Its design, process, and absolute maximum ratings (e.g., VCEO = 100 V, PD = 500 mW) are optimized exclusively for controlled avalanche switching. Using it as a linear amplifier risks premature failure due to secondary breakdown and undefined SOA behavior outside avalanche conditions.
Is base resistor selection critical for avalanche triggering?
Yes. A low-value, low-inductance base resistor (typically 10–47 Ω) is required to ensure rapid base charging and minimize trigger delay jitter. Excessive resistance causes slow turn-on, increasing avalanche energy dissipation in the base region and risking localized hot-spot formation and device degradation.
Does FMMT417TA require heatsinking in typical LIDAR pulse applications?
Not for standard 20 ns pulses at ≤1 kHz repetition rate. Its 197 °C/W RθJL and 500 mW steady-state PD allow adequate self-cooling on a 15 mm × 15 mm 1 oz Cu pad. Heatsinking becomes necessary only above 5 kHz repetition or when ambient exceeds +85°C-verified via thermal simulation using the provided transient impedance curves.
FMMT417TA Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Avalanche Mode
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 25 @ 10mA, 10V
- Power - Max:
- 330 mW
- Frequency - Transition:
- 40MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
FMMT417TA FAQ
1.How can I place an order for FMMT417TA through Aetrix?
Please submit a Request for Quotation (RFQ) for FMMT417TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FMMT417TA reliable?
The price and inventory of FMMT417TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMMT417TA is usually 5 days.
3.What payment methods are accepted for FMMT417TA?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMMT417TA transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FMMT417TA?
FMMT417TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FMMT417TA order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FMMT417TA?
For technical support, including FMMT417TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMMT417TA requirements.
6.How does Aetrix verify that FMMT417TA is sourced from the original manufacturer or authorized distributors?
All FMMT417TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMMT417TA meets industry standards.
7.What is the process for return or replacement of FMMT417TA?
All FMMT417TA units undergo pre-shipment inspection (PSI). If there is an issue with FMMT417TA, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FMMT417TA part is unused and in its original packaging.
Return procedure for FMMT417TA:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FMMT417TA Tags
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MMBT3906LT1G
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