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Diodes Incorporated FMMT417TC
- Part No.:
- FMMT417TC
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
FMMT417TC.pdf
- Description:
- TRANS NPN 100V 0.5A SOT-23-3
- Quantity:
- Payment:
- Shipping:
Inventory:6,668
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Product details
Overview
FMMT417TC from Diodes Incorporated is an NPN avalanche transistor in SOT23 package, designed specifically for controlled avalanche-mode operation with BVCES ≥ 320 V, 60 A peak avalanche current (20 ns pulse), and VCEO > 100 V. It delivers fast-edge, high-current pulses for laser diode drivers in LIDAR ranging systems.
For engineers reviewing the FMMT417TC datasheet, FMMT417TC pinout, FMMT417TC application, or FMMT417TC equivalent, key selection criteria include avalanche voltage rating, pulse current capability, thermal resistance (RθJL = 197 °C/W), and AEC-Q101 qualification for automotive-grade reliability.
Technical Context
The FMMT417TC operates exclusively in avalanche breakdown mode-not linear or saturation-leveraging tightly controlled silicon process and low-inductance SOT23 packaging to sustain 60 A transient pulses with sub-nanosecond edge rates. Its BVCES of 320 V enables high-energy pulse generation without external snubbing.
It features a measured collector-emitter inductance of 2.5 nH and output capacitance of 8 pF at 20 V, supporting fast switching transients. The device is characterized under pulsed conditions (≤300 µs width, ≤2% duty cycle) for hFE, VCE(sat), and second-breakdown current ratings.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| BVCES | ≥320 V - Ensures reliable avalanche initiation at high-voltage bias without premature breakdown |
| Peak Avalanche Current | 60 A (20 ns pulse) - Delivers high-power optical pulses for time-of-flight LIDAR |
| VCEO | >100 V - Supports safe operation in common-emitter pulse generator topologies |
| RθJL | 197 °C/W - Enables efficient heat extraction through collector lead to PCB copper |
| Lce | 2.5 nH - Minimizes parasitic ringing during nanosecond-scale current transitions |
| Cobo | 8 pF @ 20 V - Limits capacitive loading on high-speed gate or driver nodes |
| fT | 40 MHz @ 20 V, 10 mA - Confirms usable gain bandwidth for pulse shaping feedback paths |
Pinout & Package
Package: SOT23 - surface-mount, 3-terminal plastic case (UL 94V-0), 0.008 g mass, moisture sensitivity level 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal in avalanche conduction path | Low-inductance connection point for return path; tied to ground plane in pulse circuits |
| 2 (Base) | Control electrode for avalanche initiation timing | Receives narrow trigger pulse; requires low-capacitance drive to minimize delay jitter |
| 3 (Collector) | High-voltage, high-current output node | Primary heat transfer path (RθJL = 197 °C/W); connected to HV supply and load |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-optimized silicon process | Tight parameter distribution ensures consistent 320 V BVCES and repeatable 60 A pulse behavior across production lots |
| Low collector-emitter inductance | 2.5 nH enables <1 ns current rise times without oscillatory overshoot |
| AEC-Q101 qualification | Validated for automotive temperature range (−55 °C to +150 °C) and mechanical stress requirements |
| Green, halogen-free construction | <900 ppm Br/Cl, <1000 ppm Sb - meets automotive and industrial environmental compliance mandates |
Applications
| LIDAR Laser Driver | Radar Pulse Generator |
|---|---|
Use Scenario: Time-of-flight distance measurement using pulsed 905 nm laser diodes in autonomous vehicle perception systems. IC Role / Device Role / Timing Role: Avalanche switch generating 10–20 ns, 50–60 A current pulses into laser diode anode. Use Value: 320 V BVCES allows direct connection to 200–280 V bias rails; 2.5 nH Lce minimizes pulse distortion critical for cm-level ranging accuracy. | Use Scenario: Short-pulse radar transmitters for industrial proximity sensing and gesture recognition. IC Role / Device Role / Timing Role: Fast-edge switch driving resonant cavity or antenna feedline with sub-ns rise time. Use Value: 60 A peak current supports high-EIRP pulses; AEC-Q101 rating ensures operation in under-hood or factory-floor environments. |
| Fast Edge Switch Generator | High-Speed Pulse Generator |
Use Scenario: Calibration signal source for oscilloscope front-end testing and time-domain reflectometry equipment. IC Role / Device Role / Timing Role: Precision avalanche switch triggered by low-jitter logic pulse to generate clean 1–5 ns edges. Use Value: 8 pF Cobo and 2.5 nH Lce jointly limit edge degradation; RθJL = 197 °C/W permits repetitive 1 kHz pulsing with minimal thermal drift. | Use Scenario: Stimulus source in automated test equipment for semiconductor parametric characterization. IC Role / Device Role / Timing Role: Repetitive high-current pulse injector synchronized to DUT clock and sampling system. Use Value: 40 MHz fT supports closed-loop pulse amplitude control; 100 µA IEBO ensures stable base bias during multi-kHz burst modes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar avalanche transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN2012Z | BVCES = 250 V; ICM = 40 A; SOT89 package; higher thermal mass | Lower pulse energy; unsuitable for 320 V bias rails or >50 A LIDAR pulses | Select only if lower voltage (<220 V) and reduced pulse current suffice |
| DMBT3725A | BVCES = 200 V; ICM = 30 A; SOT23; no AEC-Q101 qualification | Not rated for automotive or extended temperature operation; limited to lab/test use | Acceptable for non-automotive prototyping where qualification is not required |
Compared with ZXTN2012Z and DMBT3725A, the FMMT417TC uniquely combines 320 V avalanche rating, 60 A pulse capability, AEC-Q101 qualification, and SOT23 form factor-enabling compact, high-reliability LIDAR pulse stages unattainable with either alternative.
Availability
FMMT417TC is available at Aetrix Electronics and suitable for LIDAR systems, automotive radar modules, fast-edge test equipment, and high-speed pulse generators requiring stable component supply across production lifecycles.
Supply support for FMMT417TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.
The FMMT417TC belongs to Diodes' high-voltage avalanche transistor product line, engineered specifically for precision pulsed power applications demanding nanosecond timing fidelity, high peak current, and automotive-grade reliability.
FAQ
What is the maximum allowable continuous collector current for FMMT417TC?
The absolute maximum continuous collector current (IC) is 500 mA at TA = +25°C. Derating is required above 25°C per the published thermal curve: power dissipation drops linearly to zero at +150°C ambient. This rating applies only to DC or low-duty-cycle operation-not avalanche pulsing.
Can FMMT417TC be used in linear amplifier configurations?
No. The FMMT417TC is explicitly designed and characterized for avalanche-mode switching only. Its hFE, VCE(sat), and second-breakdown limits are specified under pulsed conditions. Linear operation risks thermal runaway due to negative resistance characteristics in the avalanche region and is outside its qualified operating area.
Is the FMMT417TC pin-compatible with FMMT415TC?
Yes-both share identical SOT23 pinout (Emitter-Base-Collector on pins 1-2-3) and mechanical footprint. However, BVCES differs (320 V vs. 260 V), and avalanche energy handling is higher in FMMT417TC. Substitution requires verification of voltage margin and pulse energy requirements in the target circuit.
What is the recommended PCB layout practice for minimizing parasitic inductance?
Use short, wide copper traces directly connecting collector (pin 3) to HV supply and emitter (pin 1) to ground plane. Place decoupling capacitors within 2 mm of the collector-emitter path. Follow Diodes' AP02001 pad layout: 0.9 mm pad width, 1.35 mm length, 0.8 mm spacing. Avoid vias in high-di/dt paths.
FMMT417TC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN - Avalanche Mode
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 25 @ 10mA, 10V
- Power - Max:
- 330 mW
- Frequency - Transition:
- 40MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
FMMT417TC FAQ
1.How can I place an order for FMMT417TC through Aetrix?
Please submit a Request for Quotation (RFQ) for FMMT417TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FMMT417TC reliable?
The price and inventory of FMMT417TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMMT417TC is usually 5 days.
3.What payment methods are accepted for FMMT417TC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMMT417TC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FMMT417TC?
FMMT417TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FMMT417TC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FMMT417TC?
For technical support, including FMMT417TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMMT417TC requirements.
6.How does Aetrix verify that FMMT417TC is sourced from the original manufacturer or authorized distributors?
All FMMT417TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMMT417TC meets industry standards.
7.What is the process for return or replacement of FMMT417TC?
All FMMT417TC units undergo pre-shipment inspection (PSI). If there is an issue with FMMT417TC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FMMT417TC part is unused and in its original packaging.
Return procedure for FMMT417TC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FMMT417TC Tags
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Diodes Incorporated
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