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Diodes Incorporated FMMT417TD
- Part No.:
- FMMT417TD
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
FMMT417TD.pdf
- Description:
- TRANS NPN 100V 0.5A SOT-23-3
- Quantity:
- Payment:
- Shipping:
Inventory:3,078
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Product details
Overview
FMMT417TD from Diodes Incorporated is an NPN avalanche transistor in SOT23 package, designed specifically for high-speed pulse generation in avalanche mode. It delivers 60A peak avalanche current (20ns pulse), supports ≥320V collector-emitter sustaining voltage (VCES), and maintains 100V VCEO rating. Used in LIDAR laser diode drivers requiring fast edge switching and high-voltage pulse integrity.
For engineers reviewing the FMMT417TD datasheet, FMMT417TD pinout, FMMT417TD application, or FMMT417TD equivalent, key selection criteria include avalanche energy handling, VCES rating, pulse current capability, thermal resistance (RθJL = 197°C/W), and AEC-Q101 qualification for ruggedized timing-critical systems.
Technical Context
This transistor operates exclusively in controlled avalanche breakdown-enabled by tight process control and low-inductance SOT23 packaging. Its 2.5nH collector-emitter inductance and 8pF output capacitance minimize pulse distortion during nanosecond-scale switching events.
Designed for single-pulse or low-duty-cycle (<2%) avalanche conduction, it features a minimum hFE of 25 at IC = 10mA/VCE = 10V and guarantees BVCEO ≥ 100V under pulsed conditions, ensuring stable triggering in high-voltage pulse generator topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCES | 320 V - Sustaining voltage in avalanche mode; enables operation up to 320V before uncontrolled breakdown. |
| Peak Avalanche Current | 60 A (20 ns pulse) - Delivers high-energy pulses for laser diode triggering without secondary breakdown. |
| VCEO | 100 V - Maximum safe DC collector-emitter voltage in normal forward-active mode. |
| Lce | 2.5 nH - Low collector-emitter inductance preserves fast rise/fall times in pulse circuits. |
| RθJL | 197 °C/W - Junction-to-lead thermal resistance supports rapid heat transfer to PCB copper during short pulses. |
| fT | 40 MHz - Transition frequency confirms usable gain bandwidth for high-speed switching control loops. |
Pinout & Package
SOT23 plastic package with matte tin-plated leads; UL 94V-0 rated, moisture sensitivity level 1, weight ≈ 0.008 g.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Emitting terminal | Reference node for base drive; low-impedance path for avalanche current return. |
| 2 (Base) | Control input | Triggers avalanche onset; requires precise sub-µs timing due to low VBE(sat) = 900 mV @ IC=10mA/IB=1mA. |
| 3 (Collector) | High-voltage output | Carries full avalanche pulse current; connected to heat-sinking copper via low-inductance lead (RθJL = 197°C/W). |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-optimized silicon process | Tight parameter distribution ensures repeatable 320V VCES and predictable 60A pulse behavior across temperature (-55°C to +150°C). |
| Low-inductance SOT23 construction | 2.5nH Lce minimizes voltage overshoot and ringing during 20ns avalanche transients. |
| AEC-Q101 qualification | Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD (HBM 4kV/MM 400V). |
| Green, halogen-free packaging | Meets <900ppm Br/Cl and <1000ppm Sb requirements; RoHS-compliant with no added lead. |
Applications
| LIDAR Laser Driver | Radar Pulse Generator |
|---|---|
Use Scenario: Driving 905nm laser diodes in time-of-flight distance measurement modules. IC Role / Device Role / Timing Role: Avalanche switch generating <5ns rise-time optical pulses with precise timing jitter control. Use Value: 320V VCES enables direct drive of high-voltage laser stacks; 60A pulse sustains >1W peak optical power. | Use Scenario: Generating nanosecond RF pulses in automotive short-range radar transmitters. IC Role / Device Role / Timing Role: Fast-edge switch in pulse-forming network (PFN) topology for UWB signal synthesis. Use Value: 2.5nH Lce and 8pF Cobo preserve sub-100ps edge fidelity; AEC-Q101 ensures field reliability. |
| Fast Edge Switch Generator | High-Speed Pulse Generator |
Use Scenario: Creating calibrated step pulses for oscilloscope calibration and TDR test equipment. IC Role / Device Role / Timing Role: Controlled avalanche element defining pulse amplitude and edge speed in precision waveform sources. Use Value: Repeatable 60A/20ns pulses enable traceable metrology-grade pulse standards. | Use Scenario: Triggering spark gaps and photoconductive switches in pulsed power research systems. IC Role / Device Role / Timing Role: High-voltage switch initiating discharge in capacitor-driven pulse circuits. Use Value: 100V VCEO allows safe gate biasing; 197°C/W RθJL prevents thermal runaway during repetitive pulsing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar avalanche transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZXTN2012Z | Lower VCES (200V), higher hFE (100 min), TO-92 package (higher Lce ≈ 8nH) | Not suitable for >250V avalanche circuits; limited pulse current (25A) | Select only for lower-voltage, higher-gain linear switching where nanosecond edges are noncritical. |
| BC847B | No avalanche rating; VCEO = 45V; not AEC-Q101 qualified; SOT23 but optimized for amplification, not breakdown | Cannot operate in controlled avalanche mode; unsuitable for pulse generation above 50V | Reject for any avalanche-mode use case; only consider for general-purpose small-signal amplification. |
Compared with ZXTN2012Z and BC847B, FMMT417TD uniquely combines 320V VCES, 60A pulse capability, AEC-Q101 qualification, and SOT23 low-inductance packaging-making it irreplaceable in LIDAR and radar pulse generators requiring nanosecond edge fidelity and high-voltage robustness.
Availability
FMMT417TD is available at Aetrix Electronics and suitable for LIDAR systems, automotive radar modules, and precision pulse generators requiring stable component supply across extended production lifecycles.
Supply support for FMMT417TD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, specializing in high-reliability components for automotive, industrial, and computing markets.
FMMT417TD belongs to Diodes' avalanche transistor product line-engineered for nanosecond-scale pulse generation in safety-critical sensing and radar applications where voltage robustness and edge speed are paramount.
FAQ
What is the maximum safe operating voltage for FMMT417TD in avalanche mode?
The FMMT417TD is rated for VCES ≥ 320V at IC = 1mA, confirmed across -55°C to +150°C. Operation above this voltage risks uncontrolled breakdown and device failure. For reliable avalanche triggering, bias must remain within the specified VCES limit with appropriate snubbing and current limiting.
Can FMMT417TD be used in continuous conduction mode?
No-it is explicitly designed for pulsed avalanche operation only. Continuous conduction exceeds its 500mW steady-state power dissipation limit and risks thermal runaway. The datasheet specifies pulse width ≤ 300µs and duty cycle ≤ 2% for all electrical tests, including hFE and VCE(sat).
Is FMMT417TD pin-compatible with FMMT415TD?
Yes-both share identical SOT23 pinout (Emitter-Base-Collector on pins 1-2-3) and mechanical footprint. However, FMMT417TD offers higher VCES (320V vs. 260V) and higher IUSB (35A vs. 25A), making it a performance upgrade-not a drop-in replacement-where voltage margin is critical.
Does FMMT417TD require external base current limiting during avalanche triggering?
Yes-base drive must be actively limited to prevent excessive IB during avalanche onset. The datasheet specifies VBE(sat) ≤ 900mV at IB = 1mA, and exceeding this risks base-emitter junction damage. A series resistor or current-source driver is mandatory for repeatable, safe triggering.
FMMT417TD Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Transistor Type:
- NPN - Avalanche Mode
- Current - Collector (Ic) (Max):
- 500 mA
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 25 @ 10mA, 10V
- Power - Max:
- 330 mW
- Frequency - Transition:
- 40MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
FMMT417TD FAQ
1.How can I place an order for FMMT417TD through Aetrix?
Please submit a Request for Quotation (RFQ) for FMMT417TD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FMMT417TD reliable?
The price and inventory of FMMT417TD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMMT417TD is usually 5 days.
3.What payment methods are accepted for FMMT417TD?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMMT417TD transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FMMT417TD?
FMMT417TD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FMMT417TD order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FMMT417TD?
For technical support, including FMMT417TD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMMT417TD requirements.
6.How does Aetrix verify that FMMT417TD is sourced from the original manufacturer or authorized distributors?
All FMMT417TD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMMT417TD meets industry standards.
7.What is the process for return or replacement of FMMT417TD?
All FMMT417TD units undergo pre-shipment inspection (PSI). If there is an issue with FMMT417TD, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FMMT417TD part is unused and in its original packaging.
Return procedure for FMMT417TD:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FMMT417TD Tags
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Diodes Incorporated
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Diodes Incorporated
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Nexperia USA Inc.
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