Diodes Incorporated FMMT596TC
- Part No.:
- FMMT596TC
- Manufacturer:
- Diodes Incorporated
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
FMMT596TC.pdf
- Description:
- TRANS PNP 200V 0.3A SOT-23-3
- Quantity:
- Payment:

- Shipping:

Inventory:5,120
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Product details
Overview
FMMT596TC from Zetex Semiconductors is a PNP silicon planar high-voltage transistor in SOT-23 package, rated for VCEO = −200 V, VCBO = −220 V, and continuous IC = −300 mA. It delivers VCE(sat) = −0.2 V at IC = −100 mA / IB = −10 mA and supports fT = 150 MHz, enabling use in high-voltage switching and pulse amplification circuits in industrial power supplies.
For engineers reviewing the FMMT596TC datasheet, FMMT596TC pinout, FMMT596TC application, or FMMT596TC equivalent, key selection criteria include verified high-voltage blocking capability (−200 V VCEO), low saturation voltage under defined drive conditions, gain stability across temperature (hFE ≥ 85 at IC = −250 mA), and SOT-23 thermal performance with Ptot = 500 mW at Tamb = 25°C.
Technical Context
This PNP transistor employs a planar silicon structure optimized for high-voltage breakdown and fast switching. Its V(BR)CEO = −200 V and V(BR)CBO = −220 V are validated under pulsed conditions (300 µs, 2% duty cycle), and its fT = 150 MHz at IC = −50 mA / VCE = −10 V confirms RF-capable gain-bandwidth performance.
Switching behavior is characterized by td = 22 ns, tr = 19 ns, ts = 472 ns, and tf = 70 ns at IC = −200 mA / VCC = −80 V, supporting high-speed on/off control in flyback and snubber circuits where safe operating area extends to 100 V and 1 A DC.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | −200 V: Maximum collector-emitter voltage before avalanche under DC conditions. |
| VCBO | −220 V: Collector-base breakdown voltage defines maximum reverse bias in common-emitter configuration. |
| IC (cont.) | −300 mA: Continuous collector current rating determines steady-state power handling in linear or switching modes. |
| VCE(sat) | −0.2 V @ IC = −100 mA, IB = −10 mA: Low saturation voltage minimizes conduction loss in high-side switch applications. |
| hFE | 85–300: DC current gain range at IC = −250 mA to −1 mA ensures predictable base drive requirements across load conditions. |
| fT | 150 MHz @ IC = −50 mA, VCE = −10 V: Transition frequency validates usable bandwidth for pulse amplification up to ~100 MHz. |
| Ptot | 500 mW @ Tamb = 25°C: Total power dissipation limit governs thermal design margin in SOT-23 footprint. |
Pinout & Package
Package: SOT-23 (3-lead plastic surface-mount). Dimensions per Zetex Issue 4 datasheet: D = 2.80–3.04 mm, E = 2.10–2.64 mm, E1 = 1.20–1.40 mm, L = 0.25–0.60 mm, b = 0.30–0.50 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | E | Current source terminal in PNP operation; connects to higher potential node in high-side switch topology. |
| 2 (Base) | B | Control input requiring negative current injection to turn on; base resistor sizing must ensure IB ≥ IC/hFE(min). |
| 3 (Collector) | C | Current sink terminal; handles full load current and withstands −200 V reverse bias in off-state. |
Key Features
| Feature | Design Value |
|---|---|
| High-voltage PNP architecture | Supports −200 V collector-emitter blocking, enabling direct interface with 100–200 V DC rails without level-shifting. |
| Low VCE(sat) at moderate current | −0.2 V at IC = −100 mA reduces power loss to ≤20 mW in saturated switching mode. |
| Gain stability over temperature | hFE maintains ≥85 at IC = −250 mA from −55°C to +100°C, ensuring consistent drive requirements across environments. |
| Fast switching with defined timing | Turn-on delay td = 22 ns and fall time tf = 70 ns enable ≤500 ns total switching cycles at 100 kHz PWM frequencies. |
Applications
| Industrial Flyback Power Supply | High-Voltage Gate Driver Stage |
|---|---|
Use Scenario: Used as main switching transistor in 100–200 V input isolated flyback converters for PLC I/O modules. IC Role / Device Role / Timing Role: PNP high-side switch controlling primary current flow; operates in hard-switched PWM mode at 60–100 kHz. Use Value: −200 V VCEO rating eliminates need for external clamping diodes; low VCE(sat) keeps conduction losses below 30 mW at 100 mA load. | Use Scenario: Drives N-channel MOSFET gates in high-side half-bridge configurations for motor control inverters. IC Role / Device Role / Timing Role: Level-shifting PNP emitter-follower providing fast turn-off current path for gate discharge. Use Value: 150 MHz fT and 70 ns tf ensure <100 ns gate discharge time, reducing shoot-through risk in 20 kHz PWM operation. |
| Capacitive Discharge Ignition (CDI) | High-Voltage Pulse Amplifier |
Use Scenario: Triggers spark plug discharge in automotive CDI systems using 200 V capacitor banks. IC Role / Device Role / Timing Role: Fast-switching PNP switch discharging stored energy into ignition coil primary winding. Use Value: Safe operating area supports 200 V × 0.5 A pulses; ts = 472 ns limits storage time, minimizing energy loss before spark initiation. | Use Scenario: Amplifies narrow logic pulses to ±150 V levels for ultrasonic transducer excitation in NDT equipment. IC Role / Device Role / Timing Role: Class-A linear amplifier stage biased for low-distortion pulse reproduction at 50–100 kHz. Use Value: hFE ≥ 100 at IC = −1 mA ensures stable small-signal gain; Cobo = 10 pF minimizes high-frequency loading on driver output. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage PNP transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ZTX653 | VCEO = −150 V, VCBO = −180 V, hFE = 100–300 at IC = −150 mA | Lower voltage rating limits use to ≤150 V systems; otherwise identical SOT-23 footprint and gain profile. | Select when system rail voltage is ≤150 V and cost sensitivity outweighs 50 V margin. |
| MMBT5087 | VCEO = −50 V, VCBO = −60 V, Ptot = 310 mW, fT = 100 MHz | Not suitable for >60 V applications; lower power and gain bandwidth restrict use to low-voltage signal switching. | Only consider for sub-50 V logic-level interfaces where high-voltage capability is unnecessary. |
Compared with ZTX653 and MMBT5087, FMMT596TC provides the highest voltage blocking (−200 V), making it uniquely suitable for 100–200 V industrial and ignition applications where alternatives require redesign or derating.
Availability
FMMT596TC is available at Aetrix Electronics and suitable for industrial flyback power supplies, high-voltage gate driver stages, capacitive discharge ignition systems, and high-voltage pulse amplifiers requiring stable component supply and long-term lifecycle support.
Supply support for FMMT596TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Zetex Semiconductors plc was a UK-based ISO 9001 and TS16949 certified manufacturer specializing in high-performance discrete semiconductors before its acquisition by Diodes Incorporated in 2008.
FMMT596TC belongs to Zetex's high-voltage bipolar transistor product line, engineered specifically for robust switching and amplification in industrial power conversion, ignition, and pulse generation where reliability at elevated DC voltages is critical.
FAQ
What is the maximum continuous collector current for FMMT596TC?
The maximum continuous collector current is −300 mA at Tamb = 25°C. Derating is required above 25°C ambient: linear reduction to zero at +150°C junction temperature, per the device's thermal resistance and power dissipation limit of 500 mW.
Does FMMT596TC support pulsed current operation beyond its DC rating?
Yes - peak pulse current ICM is rated at −1 A under pulsed conditions (pulse width = 300 µs, duty cycle = 2%). This enables short-duration surge handling in ignition and snubber applications without thermal runaway.
How does the gain (hFE) vary with collector current and temperature?
hFE ranges from 100 at IC = −1 mA to 85 at IC = −250 mA (25°C), and remains ≥85 across −55°C to +100°C at IC = −250 mA. At IC = −400 mA, hFE drops to 35, indicating reduced current gain near absolute maximum ratings.
Is FMMT596TC RoHS compliant and lead-free?
Yes - per Zetex's green compliance statement in the Issue 4 datasheet, all components including FMMT596TC are compliant with the EU RoHS directive, containing no restricted substances above threshold limits, and supporting customer compliance with WEEE and ELV directives.
FMMT596TC Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Diodes Incorporated
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 300 mA
- Voltage - Collector Emitter Breakdown (Max):
- 200 V
- Vce Saturation (Max) @ Ib, Ic:
- 350mV @ 25mA, 250mA
- Current - Collector Cutoff (Max):
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 85 @ 250mA, 10V
- Power - Max:
- 500 mW
- Frequency - Transition:
- 150MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
FMMT596TC FAQ
1.How can I place an order for FMMT596TC through Aetrix?
Please submit a Request for Quotation (RFQ) for FMMT596TC on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for FMMT596TC reliable?
The price and inventory of FMMT596TC are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FMMT596TC is usually 5 days.
3.What payment methods are accepted for FMMT596TC?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FMMT596TC transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for FMMT596TC?
FMMT596TC orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your FMMT596TC order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for FMMT596TC?
For technical support, including FMMT596TC datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FMMT596TC requirements.
6.How does Aetrix verify that FMMT596TC is sourced from the original manufacturer or authorized distributors?
All FMMT596TC products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FMMT596TC meets industry standards.
7.What is the process for return or replacement of FMMT596TC?
All FMMT596TC units undergo pre-shipment inspection (PSI). If there is an issue with FMMT596TC, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The FMMT596TC part is unused and in its original packaging.
Return procedure for FMMT596TC:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
FMMT596TC Tags

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