onsemi FPN560

Overview

FPN560 from Fairchild Semiconductor is an NPN low-saturation transistor designed for high-current switching in power management and motor control circuits, featuring V_CEO = 60 V, I_C = 3.0 A continuous, V_CE(sat) = 300 mV at I_C = 1.0 A / I_B = 100 mA, h_FE = 560 at I_C = 100 mA, and TO-226 package. It delivers low conduction loss in DC-DC converters and relay drivers.

For engineers reviewing the FPN560 datasheet, pinout, applications, or equivalent options, key selection criteria include saturation voltage at high collector current, thermal resistance (R_θJA = 125 °C/W), DC current gain linearity across 100 mA–2.0 A, and safe operating area under pulsed conditions.

Technical Context

This device operates as a general-purpose NPN bipolar junction transistor optimized for low V_CE(sat) and high h_FE in linear and saturated switching modes. Its process (NA) enables stable performance from –55 °C to +150 °C junction temperature with BVCBO = 80 V and VEBO = 5.0 V.

Electrical behavior is characterized by strong current gain retention (h_FE ≥ 40 at I_C = 2.0 A), tight V_CE(sat) tolerance (300–350 mV depending on variant), and f_T = 75 MHz - supporting moderate-speed switching while maintaining robust DC drive capability.

Key Specifications

Pinout & Package

FPN560 is housed in a TO-226 (also known as TO-92) through-hole plastic package with standard C-B-E pin configuration (Collector–Base–Emitter) viewed from flat side with leads down.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN low-saturation transistor applications.

Compared with MJD127G and ZTX653, FPN560 offers superior combination of low V_CE(sat), high h_FE, and TO-226 mechanical robustness - making it optimal for cost-sensitive, through-hole, medium-power linear and switching applications where thermal margin and drive simplicity matter.

Availability

FPN560 is available at Aetrix Electronics and suitable for DC-DC converter switching stages, automotive fan motor drivers, industrial relay interfaces, and LED string current regulators requiring stable component supply and long-term manufacturability.

Supply support for FPN560 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The FPN560 belongs to Fairchild's legacy NPN low-saturation transistor product line, engineered for high-current gain and minimal conduction loss in industrial control, power conversion, and automotive subsystems.

FAQ

What is the maximum continuous collector current rating for FPN560?

The FPN560 has a maximum continuous collector current rating of 3.0 A at T_A = 25 °C. This rating assumes proper PCB copper area and ambient conditions; derating is required above 25 °C per the Power Dissipation vs Ambient Temperature curve in the datasheet. At 100 °C ambient, usable I_C drops to approximately 1.2 A for safe operation within R_θJA limits. The FPN560 must be operated within its SOA boundaries for pulsed applications.

Is FPN560 pin-compatible with FPN560A?

Yes, FPN560 and FPN560A share identical TO-226 package, pinout (C-B-E), and absolute maximum ratings. Their key difference lies in h_FE binning: FPN560 guarantees h_FE ≥ 560 at I_C = 100 mA, while FPN560A guarantees h_FE ≥ 560A (i.e., ≥ 560 with tighter distribution). Both exhibit identical V_CE(sat) and thermal characteristics. The FPN560A is a binned version of the FPN560 for higher-gain-critical designs.

What is the typical V_CE(sat) of FPN560 at 2.0 A collector current?

The typical V_CE(sat) of FPN560 at I_C = 2.0 A and I_B = 200 mA is 300 mV, with a maximum of 350 mV per datasheet specifications. This value is measured under pulsed conditions (≤300 µs, ≤2% duty cycle) at T_A = 25 °C. At elevated temperatures or DC operation, V_CE(sat) increases slightly due to positive temperature coefficient - expect ~320–340 mV at 100 °C junction temperature.

Does FPN560 require a base resistor when driven by a 3.3 V microcontroller GPIO?

Yes, FPN560 requires an external base resistor to limit base current and ensure saturation. With V_BE(sat) ≈ 1.25 V at I_C = 1.0 A, a 3.3 V GPIO needs ~200–220 Ω to deliver ~10 mA base current (IB = IC / hFE ≈ 1 A / 560 ≈ 1.8 mA minimum; 10 mA ensures deep saturation). Without this resistor, excessive base current could damage the GPIO or cause thermal overstress. The FPN560 does not integrate base resistors.

What is the transition frequency (f_T) of FPN560 and how does it affect switching speed?

The FPN560 has a transition frequency f_T of 75 MHz at I_C = 100 mA, V_CE = 5.0 V. This indicates usable small-signal gain up to ~10–15 MHz, making it suitable for PWM frequencies ≤ 500 kHz with reasonable switching efficiency. However, its primary design focus is DC/low-frequency switching (e.g., relay control, fan speed regulation), not RF or high-speed digital applications. For the FPN560, switching speed is more limited by stored charge and minority carrier lifetime than by f_T.