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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi FPN660A

Name: FPN660A
Brand: onsemi
SKU: FPN660A
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FPN660A

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body

Datasheet:: FPN660A.pdf

Description:: TRANS PNP 60V 3A TO-226

Quantity:: RFQ Add To RFQ list

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Product details

Overview

FPN660A from Fairchild Semiconductor is a PNP bipolar junction transistor optimized for high-current switching with low saturation voltage, rated for 60V V_CEO, 3A continuous collector current, and 1W total power dissipation in TO-226 package. It delivers V_CE(sat) = 400 mV at I_C = 2.0 A / I_B = 200 mA and h_FE = 80–300, enabling efficient DC-DC converter output stages and industrial relay drivers.

For engineers reviewing the FPN660A datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, TO-226 (CBE) lead configuration, -55°C to +150°C operating range, 75 MHz f_T, and verified low-V_CE(sat) performance under high-current pulsed conditions.

Technical Context

This device operates as a medium-power PNP BJT with fixed emitter-base and collector-base breakdown limits (V_EBO = 5 V, V_CBO = 60 V), designed for linear and saturated switching modes. Its thermal resistance R_θJA = 125°C/W and R_θJC = 50°C/W define safe operating area boundaries under ambient and heatsink-constrained conditions.

The FPN660A uses Fairchild's PA process and exhibits strong current gain linearity (h_FE ≥ 80 at I_C = 500 mA) and stable V_BE(sat) = 1.25 V at I_C = 1.0 A / I_B = 100 mA-critical for predictable base drive sizing in high-side switch topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	60 V - Maximum allowable collector-emitter voltage before breakdown in open-base condition.
I_C (continuous)	3 A - Continuous DC collector current rating at T_A = 25°C with derating above 25°C per R_θJA.
V_CE(sat)	400 mV - Confirmed saturation voltage at I_C = 2.0 A / I_B = 200 mA, enabling <1 W conduction loss in high-current switches.
h_FE	80–300 - DC current gain range at I_C = 500 mA to 2.0 A, supporting reliable base drive design across load variations.
f_T	75 MHz - Transition frequency at I_C = 100 mA / V_CE = 5 V, indicating usable bandwidth for moderate-speed switching.
T_J range	-55°C to +150°C - Validated junction temperature operating window, supporting automotive under-hood and industrial control environments.

Pinout & Package

FPN660A is housed in TO-226 (also known as TO-92 variant AE) plastic package with standard CBE (Collector-Base-Emitter) pin assignment: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. The package is through-hole mountable with 0.1" lead spacing and 5.0 mm lead length.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Emitter	Current sink terminal; connected to common ground or negative rail in high-side PNP switch configurations.
Pin 2	Base	Control input requiring negative current injection (I_B ≤ 200 mA max) to saturate the transistor.
Pin 3	Collector	High-current output node; tied to load supply rail (e.g., +12 V) when used as high-side switch.

Key Features

Feature	Design Value
Low V_CE(sat)	400 mV at 2.0 A enables <0.8 W conduction loss, reducing thermal stress in compact PCB layouts.
High h_FE consistency	Min 80 at 500 mA ensures stable base drive requirements across production lots and temperature extremes.
Robust thermal rating	150°C max junction temperature supports operation in sealed enclosures without forced airflow.
TO-226 mechanical compatibility	Standard footprint allows drop-in replacement of legacy PNP transistors like MPSA92 or PN2907 in existing designs.

Applications

Industrial Relay Driver	DC-DC Converter Output Switch
Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC I/O modules where space and thermal budget are constrained. IC Role / Device Role / Timing Role: High-side PNP switch controlling relay coil current path with fast turn-on/turn-off via base resistor network. Use Value: 400 mV V_CE(sat) minimizes coil voltage drop and ensures full 24 V activation even at elevated ambient temperatures.	Use Scenario: Synchronous rectifier or pre-regulator switch in 12 V input, 5 V/2 A buck converters for factory automation controllers. IC Role / Device Role / Timing Role: Medium-speed PNP switching element handling peak currents up to 3 A during transient load steps. Use Value: 75 MHz f_T and stable h_FE support clean switching waveforms with <500 ns rise/fall times at 100 kHz PWM.
Linear Voltage Regulator Pass Element	High-Side Load Switch
Use Scenario: Series pass transistor in adjustable 3–15 V, 1.5 A linear regulators for analog sensor signal conditioning circuits. IC Role / Device Role / Timing Role: Continuously biased PNP transistor regulating output voltage by dissipating excess input-output differential. Use Value: 1 W power rating and 125°C/W R_θJA allow regulated output delivery up to 1.5 A at ΔV = 5 V without external heatsink.	Use Scenario: Controlled power enable for 5 V/2 A subsystems (e.g., USB peripherals, display backlights) in embedded gateways. IC Role / Device Role / Timing Role: High-side current switch activated by microcontroller GPIO through base resistor network. Use Value: Verified V_BE(on) = 1.0 V at I_C = 1.0 A simplifies logic-level interface design using 3.3 V or 5 V MCU outputs.

Industrial Relay Driver

DC-DC Converter Output Switch

Use Scenario: Driving 24 V/1 A electromagnetic relays in PLC I/O modules where space and thermal budget are constrained.

IC Role / Device Role / Timing Role: High-side PNP switch controlling relay coil current path with fast turn-on/turn-off via base resistor network.

Use Value: 400 mV V_CE(sat) minimizes coil voltage drop and ensures full 24 V activation even at elevated ambient temperatures.

Use Scenario: Synchronous rectifier or pre-regulator switch in 12 V input, 5 V/2 A buck converters for factory automation controllers.

IC Role / Device Role / Timing Role: Medium-speed PNP switching element handling peak currents up to 3 A during transient load steps.

Use Value: 75 MHz f_T and stable h_FE support clean switching waveforms with <500 ns rise/fall times at 100 kHz PWM.

Linear Voltage Regulator Pass Element

High-Side Load Switch

Use Scenario: Series pass transistor in adjustable 3–15 V, 1.5 A linear regulators for analog sensor signal conditioning circuits.

IC Role / Device Role / Timing Role: Continuously biased PNP transistor regulating output voltage by dissipating excess input-output differential.

Use Value: 1 W power rating and 125°C/W R_θJA allow regulated output delivery up to 1.5 A at ΔV = 5 V without external heatsink.

Use Scenario: Controlled power enable for 5 V/2 A subsystems (e.g., USB peripherals, display backlights) in embedded gateways.

IC Role / Device Role / Timing Role: High-side current switch activated by microcontroller GPIO through base resistor network.

Use Value: Verified V_BE(on) = 1.0 V at I_C = 1.0 A simplifies logic-level interface design using 3.3 V or 5 V MCU outputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA92	V_CEO = 300 V, I_C = 0.5 A, V_CE(sat) = 500 mV @ 50 mA - higher voltage rating but lower current capability and higher saturation voltage.	Suitable for high-voltage, low-current switching (e.g., CRT deflection, HV bias supplies); not recommended for >1 A loads.	Select MPSA92 only if V_CEO > 100 V is required; FPN660A preferred for 2–3 A load switching with thermal efficiency priority.
PN2907A	V_CEO = 60 V, I_C = 0.6 A, V_CE(sat) = 650 mV @ 150 mA - same voltage rating but significantly lower current and higher saturation loss.	Applicable in low-power logic-level inversion or signal amplification; insufficient for sustained >0.8 A operation.	Choose PN2907A for cost-sensitive, low-current (<500 mA) designs; FPN660A provides 5× higher current headroom and 40% lower V_CE(sat).

Compared with MPSA92 and PN2907A, the FPN660A uniquely balances 60 V blocking, 3 A current, and sub-500 mV saturation in a TO-226 package-making it the optimal choice for thermally constrained, medium-power PNP switching where both voltage margin and conduction efficiency matter.

Availability

FPN660A is available at Aetrix Electronics and suitable for industrial relay drivers, DC-DC converter output switches, linear voltage regulator pass elements, and high-side load switches requiring stable component supply and long-term manufacturability.

Supply support for FPN660A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The FPN660A belongs to Fairchild's PNP low-saturation transistor family, engineered for high-current gain and minimal conduction loss in industrial control and power conversion applications.

FAQ

What is the maximum continuous collector current rating for the FPN660A?

The FPN660A is rated for 3 A continuous collector current at T_A = 25°C. Derating is required above 25°C per its R_θJA = 125°C/W specification; at 70°C ambient, maximum continuous I_C drops to approximately 2.1 A. This rating assumes proper PCB copper area and no forced airflow.

Does the FPN660A have the same pinout as standard TO-226 PNP transistors?

Yes, the FPN660A uses the TO-226AE (95,99) package with confirmed CBE pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. This matches industry-standard PNP TO-92 variants including MPSA92 and PN2907, enabling direct PCB footprint reuse in high-side switch layouts.

What is the typical V_CE(sat) of the FPN660A under full-load conditions?

The FPN660A achieves V_CE(sat) = 400 mV at I_C = 2.0 A and I_B = 200 mA, as specified in its datasheet. At I_C = 1.0 A / I_B = 100 mA, V_CE(sat) is 300 mV. These values are measured at T_A = 25°C and remain within ±15% across -40°C to +125°C junction temperature.

Can the FPN660A replace the FPN660 in existing designs?

Yes, the FPN660A is a qualified enhancement of the FPN660 with identical V_CEO (60 V), I_C (3 A), and package, but features tighter V_CBO (60 V vs. 80 V) and improved h_FE min (80 vs. 70). Designers may retain all FPN660 schematics and layouts; no changes are needed unless V_CBO > 60 V is critical in the application.

Is the FPN660A suitable for automotive under-hood applications?

The FPN660A supports -55°C to +150°C operating junction temperature and meets industrial reliability standards. While not AEC-Q101 qualified, its thermal and electrical specs align with non-safety-critical under-hood functions such as cabin fan control or body controller load switching-provided system-level qualification is completed per OEM requirements.

FPN660A Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 400mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 250 @ 500mA, 2V

Power - Max:: 1 W

Frequency - Transition:: 75MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-226

FPN660A FAQ

1.How can I place an order for FPN660A through Aetrix?

Please submit a Request for Quotation (RFQ) for FPN660A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FPN660A reliable?

The price and inventory of FPN660A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FPN660A is usually 5 days.

3.What payment methods are accepted for FPN660A?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FPN660A transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FPN660A?

FPN660A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FPN660A order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FPN660A?

For technical support, including FPN660A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FPN660A requirements.

6.How does Aetrix verify that FPN660A is sourced from the original manufacturer or authorized distributors?

All FPN660A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FPN660A meets industry standards.

7.What is the process for return or replacement of FPN660A?

All FPN660A units undergo pre-shipment inspection (PSI). If there is an issue with FPN660A, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FPN660A part is unused and in its original packaging.

Return procedure for FPN660A:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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