Diodes Incorporated FZT2907ATA

Overview

FZT2907ATA from Diodes Incorporated is a PNP silicon planar switching transistor in SOT-223 package, rated for −60 V V_CEO, −600 mA continuous collector current, and 1.5 W power dissipation at T_amb = 25°C. It delivers fast switching (t_on = 50 ns, t_off = 110 ns) with h_FE = 75–100 at I_C = −150 mA, used in high-voltage DC-DC converter control stages and industrial relay drivers.

For engineers reviewing the FZT2907ATA datasheet, FZT2907ATA pinout, FZT2907ATA application, or FZT2907ATA equivalent, key selection factors include verified V_CEO = −60 V rating, guaranteed h_FE ≥ 75 at −150 mA, SOT-223 thermal performance (R_θJA ≈ 80°C/W), and documented switching times under pulsed conditions per Issue 4 (June 1996) specification.

Technical Context

This PNP bipolar junction transistor operates in common-emitter configuration with base-driven saturation switching. Its −60 V V_CEO and −60 V V_(BR)CBO support high-side switching in negative-rail power supplies, while f_T = 200 MHz enables stable operation up to mid-frequency switching applications.

Designed for pulsed operation (duty cycle ≤ 2%, pulse width = 300 µs), it maintains V_CE(sat) ≤ −0.4 V at I_C = −150 mA / I_B = −15 mA and exhibits C_obo = 8 pF at V_CB = −10 V, supporting predictable turn-on/turn-off timing in discrete gate-drive and load-switching circuits.

Key Specifications

Pinout & Package

SOT-223 package with exposed collector tab (pin 3) for thermal conduction and mechanical mounting. Standard pin assignment: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector (tab).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching transistor applications.

Compared with ZXTN25050DFH and MJD2955T4G, FZT2907ATA uniquely balances −60 V rating, SMT-compatible SOT-223 footprint, 50 ns switching, and 1.5 W dissipation-making it optimal for space-constrained, medium-power industrial switching where thermal and voltage margins must coexist.

Availability

FZT2907ATA is available at Aetrix Electronics and suitable for industrial relay drivers, −48 V telecom backup switches, and discrete gate drivers requiring stable component supply and long-term manufacturability.

Supply support for FZT2907ATA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global semiconductor company specializing in discrete, analog, and mixed-signal devices for industrial, computing, and communications markets.

FZT2907ATA belongs to Diodes' legacy high-voltage PNP switching transistor product line, engineered for reliability in harsh-environment power control and interface circuits where robust V_CEO and proven thermal behavior are prioritized over ultra-high-speed or digital integration.

FAQ

Is FZT2907ATA RoHS compliant?

Yes, FZT2907ATA meets RoHS Directive 2011/65/EU requirements. Diodes Incorporated confirms lead-free terminations and halogen-free molding compound per their official product change notice PCN-2015-012, effective for all production lots after June 2015.

What is the maximum safe operating temperature for continuous use?

The device supports continuous operation up to T_j = +150°C. At ambient temperatures above +70°C, derating is required: P_tot decreases linearly to zero at +150°C, yielding ~0.9 W max at +100°C ambient with standard 2-layer PCB copper.

Can FZT2907ATA replace FZT2907 in existing designs?

Yes-FZT2907ATA is the tape-and-reel packaged version of FZT2907A with identical electrical specifications, pinout, and thermal characteristics. The "TA" suffix denotes packaging format only; no circuit redesign or requalification is needed.

Does it require a base resistor in switching applications?

Yes-a series base resistor is mandatory to limit I_B. For I_C = −150 mA with h_FE = 75, minimum I_B = −2 mA is required; typical design uses 1 kΩ from −5 V logic to ensure −5 mA drive and hard saturation.