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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Diodes Incorporated FZT658TA

Name: FZT658TA
Brand: Diodes Incorporated
SKU: FZT658TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FZT658TA

Manufacturer:: Diodes Incorporated

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: FZT658TA.pdf

Description:: TRANS NPN 400V 0.5A SOT-223-3

Quantity:: RFQ Add To RFQ list

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Inventory:20,147

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Product details

Overview

FZT658TA from Diodes Incorporated is a 400V NPN high-voltage transistor in SOT223 package, designed for switching and linear regulation in high-voltage DC-DC converters and industrial power supplies. It delivers 500mA continuous collector current, supports 1A peak pulse current, achieves V_CE(sat) < 250mV at 50mA/5mA drive, and maintains h_FE > 40 up to 200mA - enabling robust high-voltage hold-up and flyback primary-side switching.

For engineers reviewing the FZT658TA datasheet, FZT658TA pinout, FZT658TA application, or FZT658TA equivalent, key selection criteria include verified 400V V_CEO rating, SOT223 thermal performance (R_θJA = 41.7°C/W on 50mm × 50mm 2oz Cu), low saturation voltage under real drive conditions, and complementary PNP pairing with FZT758TA for push-pull topologies.

Technical Context

This NPN bipolar junction transistor operates in active and saturation regions for high-voltage switching applications. Its 400V V_CEO and 400V V_CBO ratings support operation in off-line SMPS primary circuits and industrial HV bias rails. The device sustains 500mA continuous current with thermal resistance optimized for SOT223 mounting on PCB copper areas.

Electrical behavior is characterized by h_FE ≥ 40 at IC = 200mA/V_CE = 10V, f_T = 50MHz at V_CE = 20V/IC = 10mA, and fast switching with t_on = 130ns and t_off = 3.3µs under specified test conditions (IC = 100mA, V_CC = 100V).

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	400 V - Enables direct use in 380V DC bus and 230V AC rectified primary-side switching without derating.
I_C (continuous)	500 mA - Supports medium-power flyback and forward converter output stages with margin for transient loads.
V_CE(sat)	< 250 mV @ 50mA/5mA - Reduces conduction loss and self-heating in linear regulator and saturated-switch modes.
h_FE	> 40 @ 200mA - Ensures stable base drive requirements and predictable gain in high-current amplification.
f_T	50 MHz - Supports switching frequencies up to ~5–10 MHz in small-signal amplifier or RF driver roles.
R_θJA	41.7 °C/W - Achieved with 50mm × 50mm 2oz Cu pad; enables 3W dissipation at ≤ 125°C junction rise in still air.
ESD HBM	4000 V - Provides handling robustness during PCB assembly and system integration without extra protection.

Pinout & Package

Package: SOT223 (Type DN), surface-mount, 4-pin configuration with collector tab (pin 3) electrically connected to lead frame for enhanced thermal transfer. Molded green compound, RoHS-compliant matte tin plating, moisture sensitivity level 1.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Emitter)	Current sink terminal	Low-impedance path for emitter current return; connects to ground or reference node in common-emitter configurations.
Pin 2 (Base)	Control input	Receives forward-biased current to drive transistor into saturation or active region; requires current-limiting resistor in discrete driver designs.
Pin 3 (Collector / Tab)	Main power output	High-voltage collector node; metal tab provides thermal conduction path to PCB copper; electrically tied to collector.
Pin 4 (Collector)	Collector extension	Secondary collector connection for improved current sharing and reduced bond wire inductance in high-dI/dt switching.

Key Features

Feature	Design Value
400V breakdown rating	Validated V_CEO and V_CBO ≥ 400V ensures safe operation in 380V DC link and 230V AC-derived supplies.
Low V_CE(sat)	< 250mV at 50mA/5mA drive reduces power loss and improves efficiency in saturated-switch applications.
High h_FE at 200mA	h_FE > 40 up to 200mA simplifies base drive design and minimizes required gate/base driver current.
SOT223 thermal performance	R_θJL = 12.9°C/W to lead enables efficient heat transfer to PCB copper, supporting 3W continuous dissipation.
Complementary PNP pair	FZT758TA shares identical SOT223 footprint and voltage/current specs, enabling matched push-pull and H-bridge designs.

Applications

Industrial Flyback Converters

High-Voltage Bias Supplies

Use Scenario: Primary-side switch in 20–60W offline flyback converters powering PLC I/O modules and sensor interfaces.

IC Role / Device Role / Timing Role: High-voltage NPN switch controlling energy transfer across transformer primary winding during PWM on-time.

Use Value: 400V V_CEO eliminates need for snubber networks in 230V AC input designs; low V_CE(sat) cuts conduction loss by ≥15% vs. comparable 600V transistors.

Use Scenario: Regulated 12–24V bias rail generation from 300–400V DC intermediate bus in motor drives and inverters.

IC Role / Device Role / Timing Role: Linear pass transistor in series-regulated HV bias supply, operating in active region for ripple suppression.

Use Value: Stable h_FE > 40 at 200mA ensures predictable base current and tight output regulation under load transients.

Capacitor Discharge Ignition (CDI)

LED Driver Hold-Up Circuits

Use Scenario: Energy-switching transistor in motorcycle and small-engine CDI systems requiring fast turn-off and high-voltage isolation.

IC Role / Device Role / Timing Role: High-speed switch discharging stored capacitor into ignition coil primary; driven by narrow base pulses.

Use Value: t_off = 3.3µs enables precise spark timing control; 4000V HBM ESD rating withstands ignition-induced transients.

Use Scenario: Hold-up transistor maintaining LED string current during brief AC line dips in commercial lighting ballasts.

IC Role / Device Role / Timing Role: Saturated switch bypassing current around buck controller during brownout events.

Use Value: 1A I_CM supports 2× peak LED current surges; low V_CE(sat) limits voltage drop to <0.3V during hold-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZTX653	V_CEO = 300V, h_FE = 100 min @ 10mA, SOT89 package	Limited to ≤ 300V systems; higher gain at low current but degrades above 100mA	Select only if voltage stress remains below 260V and thermal budget allows smaller SOT89 footprint.
MJD127	V_CEO = 100V, I_C = 2A, TO-220 package, lower V_CE(sat) = 1.5V	Not suitable for >100V applications; requires heatsink for >1W dissipation	Use only in low-voltage, high-current linear regulators where 400V capability is unnecessary.

Compared with ZTX653 and MJD127, FZT658TA uniquely balances 400V capability, SOT223 thermal efficiency, and usable gain at 200mA - making it optimal for compact, medium-power HV switching where voltage margin and board space are critical.

Availability

FZT658TA is available at Aetrix Electronics and suitable for industrial flyback converters, high-voltage bias supplies, capacitor discharge ignition systems, and LED driver hold-up circuits requiring stable component supply and long-term manufacturability.

Supply support for FZT658TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The FZT658TA belongs to Diodes' high-voltage bipolar transistor product line, engineered specifically for reliable switching and linear operation in industrial power conversion, automotive auxiliary systems, and appliance control circuits.

FAQ

What is the maximum allowable junction temperature for FZT658TA?

The FZT658TA has an operating junction temperature range of –55°C to +150°C. Continuous operation at 150°C requires strict thermal design: R_θJA must be ≤ 41.7°C/W with 50mm × 50mm 2oz Cu, and ambient temperature must remain ≤ 25°C. Derating is mandatory above 25°C ambient per the thermal curves in DS33153 Rev. 7–2.

Can FZT658TA replace a MOSFET in high-voltage switching applications?

FZT658TA can replace low-speed, medium-current MOSFETs in applications where gate drive complexity, cost, or layout space is constrained - but not in high-frequency (>100kHz) or zero-voltage-switching topologies. Its 3.3µs t_off and bipolar drive requirement limit switching speed versus MOSFETs, though its 400V rating and SOT223 footprint offer advantages in space-constrained linear or quasi-resonant designs.

Is FZT658TA qualified for automotive applications?

FZT658TA is not AEC-Q101 qualified. Diodes states that automotive-grade versions require specific change control, PPAP capability, and IATF 16949 manufacturing - which this standard part does not include. For automotive use, engineers must contact Diodes directly to request qualified variants; FZT658TA is intended for industrial, commercial, and consumer power applications.

How does the dual-collector pin (pins 3 and 4) function in SOT223?

Pins 3 and 4 are both electrically connected to the collector. Pin 3 is the large metal tab providing primary thermal conduction to the PCB; pin 4 is a secondary lead offering mechanical stability and reduced bond-wire inductance. Both must be routed to the same net - typically a high-current, low-impedance collector trace - and both contribute to current-carrying capacity and thermal dissipation in parallel.

FZT658TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 200mA, 10V

Power - Max:: 2 W

Frequency - Transition:: 50MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223-3

FZT658TA FAQ

1.How can I place an order for FZT658TA through Aetrix?

Please submit a Request for Quotation (RFQ) for FZT658TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FZT658TA reliable?

The price and inventory of FZT658TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FZT658TA is usually 5 days.

3.What payment methods are accepted for FZT658TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FZT658TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FZT658TA?

FZT658TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FZT658TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FZT658TA?

For technical support, including FZT658TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FZT658TA requirements.

6.How does Aetrix verify that FZT658TA is sourced from the original manufacturer or authorized distributors?

All FZT658TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FZT658TA meets industry standards.

7.What is the process for return or replacement of FZT658TA?

All FZT658TA units undergo pre-shipment inspection (PSI). If there is an issue with FZT658TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FZT658TA part is unused and in its original packaging.

Return procedure for FZT658TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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