Diodes Incorporated FZT696BTC

Overview

FZT696BTC from Diodes Incorporated is an 180V NPN high-voltage transistor in SOT223 package, rated for 0.5A continuous collector current, with minimum hFE of 500 at 100mA/5V, VCE(sat) ≤ 200mV at 50mA/0.5mA, and BVCEO = 180V. It serves as a high-gain switching device in relay/solenoid drivers and Darlington pair stages.

For engineers reviewing the FZT696BTC datasheet, FZT696BTC pinout, FZT696BTC application, or FZT696BTC equivalent, key selection criteria include high-voltage blocking (180V), low saturation voltage under medium-current switching, thermal resistance to ambient (41.7°C/W on 50mm×50mm 2oz Cu), and automotive-grade qualification readiness per AEC-Q101.

Technical Context

The FZT696BTC is a silicon NPN bipolar junction transistor optimized for high-voltage linear and switching operation up to 180V. Its design emphasizes high DC current gain (hFE ≥ 500 @ IC = 100mA) and low VCE(sat) (200–250mV across 50–200mA drive conditions), enabling efficient medium-current switching without external gain boosting.

It features complementary PNP pairing with FZT795A, supports pulsed operation up to 1A peak, and delivers fT = 130MHz at 50mA/5V - suitable for fast-switching control loops where gain-bandwidth trade-offs matter. Thermal performance is defined across four mounting configurations, with RθJA ranging from 41.7 to 104°C/W depending on PCB copper area and thickness.

Key Specifications

Pinout & Package

Package: SOT223 (Type DN), surface-mount, 4-pin configuration with exposed collector tab (pin 3) for thermal and electrical connection. Molded green compound, UL 94V-0 rated, 0.112g mass.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage transistor applications.

Compared with ZXTN2012E6TA and MJD127G, the FZT696BTC uniquely balances 180V blocking, 0.5A capability, and SOT223 thermal performance - making it optimal for space-limited, medium-power industrial controls where both voltage headroom and thermal efficiency are critical.

Availability

FZT696BTC is available at Aetrix Electronics and suitable for industrial relay drivers, automotive body control modules, Darlington pre-drivers, and high-voltage sensor interfaces requiring stable component supply and long-term manufacturing continuity.

Supply support for FZT696BTC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The FZT696BTC belongs to Diodes' high-voltage bipolar transistor product line, engineered specifically for ruggedized industrial and automotive switching applications where reliability under voltage stress and thermal cycling is essential.

FAQ

What is the maximum continuous power dissipation for FZT696BTC on a standard PCB?

The FZT696BTC achieves 3W maximum continuous power dissipation when mounted on a 50mm × 50mm 2oz copper area on FR4, per Note 5 in the datasheet. This corresponds to a thermal resistance of 41.7°C/W. On smaller copper areas (e.g., 25mm × 25mm 1oz Cu), PD drops to 1.6W (RθJA = 78.1°C/W). Derating curves in Figure 4 confirm linear reduction above +25°C ambient.

Is FZT696BTC qualified to AEC-Q101 for automotive use?

FZT696BTC is manufactured in IATF 16949-certified facilities and supports PPAP documentation, but full AEC-Q101 qualification requires customer-specific testing and change control agreement. Diodes states that "for automotive applications requiring specific change control… please contact us or your local representative" - meaning qualification status is project-dependent and not pre-certified out-of-box.

Can FZT696BTC replace a Darlington pair in existing designs?

Yes - its hFE ≥ 500 at 100mA enables single-transistor replacement of low-gain Darlingtons in many 0.5A-class switching roles. However, Darlington configurations offer higher effective hFE (>5000) and lower base drive requirements; verify that the MCU or driver can supply sufficient IB (e.g., 2mA for 1A load) before substitution, and check VCE(sat) impact on system efficiency.

What is the recommended PCB pad layout for thermal performance?

Diodes specifies a minimum pad layout with C = 2.30mm, C1 = 6.40mm, X = 1.20mm, X1 = 3.30mm, Y = 1.60mm, Y1 = 1.60mm, and Y2 = 8.00mm (all in mm). For rated 3W operation, the collector tab (pin 3) must connect to ≥25mm² of 2oz copper. Avoid narrow traces to the collector; use multiple thermal vias under the tab if internal layers are used for heat spreading.