Diodes Incorporated FZT751TC

Overview

FZT751TC from Diodes Incorporated is a 60V PNP medium-power transistor in SOT223 package, rated for -3A continuous collector current and -6A peak pulse current, with V_CE(sat) < -300mV at -1A. It serves as a high-current switching device in gate-driving circuits for MOSFETs and IGBTs, and in LED and automotive lighting control stages.

For engineers reviewing the FZT751TC datasheet, FZT751TC pinout, FZT751TC application, or FZT751TC equivalent, key selection criteria include its -60V V_CEO, low saturation voltage under high current, thermal resistance of 41.7°C/W on 50mm × 50mm copper, complementary pairing with FZT651, and automotive-grade variant (FZT751Q) availability.

Technical Context

The FZT751TC operates as a silicon PNP bipolar junction transistor optimized for medium-power linear and switching applications. Its BV_CEO = -60V and I_C = -3A rating support robust operation in DC-DC converter output stages and high-side load switches where reverse polarity control is required.

It features h_FE = 80–170 at -1A and f_T = 100–140MHz, enabling stable gain in audio amplification and fast switching in gate-drive buffers. The SOT223 package provides integrated heat-sinking via the collector tab, with R_θJL = 12.9°C/W to solder point.

Key Specifications

Pinout & Package

Package: SOT223 (Type DN), surface-mount, thermally enhanced plastic package with exposed collector tab for heatsinking. Weight: 0.112g. Moisture sensitivity level: J-STD-020 Level 1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power transistor applications.

Compared with ZXTN2012Z and MJD44H11T4G, the FZT751TC delivers optimal balance of current capability, thermal performance, and board-level integration in SOT223-making it preferred for compact, high-efficiency gate drivers and LED drivers where 3A continuous current and <42°C/W thermal resistance are critical.

Availability

FZT751TC is available at Aetrix Electronics and suitable for LED driver stages, MOSFET/IGBT gate driving, and industrial power supply sequencing requiring stable component supply and RoHS-compliant, halogen-free manufacturing.

Supply support for FZT751TC includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

The FZT751TC belongs to Diodes' medium-power bipolar transistor product line, engineered for high-reliability switching and amplification in automotive, industrial, and lighting applications where thermal efficiency and ruggedness are essential.

FAQ

What is the maximum safe operating temperature for FZT751TC?

The FZT751TC has an operating junction temperature range of -55°C to +150°C. With R_θJA = 41.7°C/W on 50mm × 50mm 2oz copper, it sustains 3W dissipation at 25°C ambient. Derating begins above 25°C: max power drops linearly to zero at 150°C junction, requiring thermal design to maintain T_J ≤ 125°C for long-term reliability.

Is FZT751TC pin-compatible with FZT751TA?

Yes - both FZT751TC and FZT751TA use identical SOT223 (Type DN) packaging and pinout (C-E-B). The only difference is tape-and-reel packaging: FZT751TC ships in 4,000-unit reels (13-inch reel, 12mm tape), while FZT751TA uses 1,000-unit reels (7-inch reel, 12mm tape). Electrical and thermal performance are identical.

Can FZT751TC replace a small-signal PNP transistor like BC807?

No - the FZT751TC is a medium-power device (3A, 2–3W), whereas BC807 is a small-signal transistor (0.5A, 0.3W, SOT23). Substituting it risks overdesign, increased board area, and unnecessary cost. Use FZT751TC only where ≥1.5A continuous current, low V_CE(sat), or thermal robustness are required.

Does FZT751TC require a base resistor in switching applications?

Yes - a base resistor is mandatory to limit IB and prevent damage. For -1A collector current, h_FE ≈ 100 implies ~10mA base current; with V_BE(sat) ≈ -1.0V, a 470Ω resistor from a -5V logic source delivers ~9mA. Undriven base can cause thermal runaway due to secondary breakdown susceptibility at high V_CE.