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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

Diodes Incorporated FZT758TA

Name: FZT758TA
Brand: Diodes Incorporated
SKU: FZT758TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: FZT758TA

Manufacturer:: Diodes Incorporated

Category:: Single Bipolar Transistors

Package:: TO-261-4, TO-261AA

Datasheet:: FZT758TA.pdf

Description:: TRANS PNP 400V 0.5A SOT-223-3

Quantity:: RFQ Add To RFQ list

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Inventory:2,442

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Product details

Overview

FZT758TA from Diodes Incorporated is a 400V PNP high-voltage bipolar junction transistor in SOT223 package, rated for -500mA continuous collector current and -400V V_CEO. It delivers low saturation voltage (V_CE(sat) < -250mV @ -50mA), high DC current gain (h_FE > 40 up to -200mA), and supports peak pulse current of -1A - used in high-voltage flyback snubber circuits and industrial power supply hold-up stages.

For engineers reviewing the FZT758TA datasheet, FZT758TA pinout, FZT758TA application, or FZT758TA equivalent, key selection criteria include verified V_CEO = -400V rating, SOT223 thermal performance (R_θJA = 41.7°C/W on 50mm × 50mm 2oz copper), and complementary pairing with FZT658 for push-pull HV switching designs.

Technical Context

The FZT758TA operates as a high-voltage PNP switch with breakdown ratings of V_CBO = -400V and V_EBO = -7V, enabling use in off-line auxiliary supplies and relay drivers where emitter-referenced high-side control is required. Its f_T = 50MHz and C_obo = 20pF support moderate-speed switching in <100kHz applications.

Thermal design relies on its R_θJL = 12.9°C/W junction-to-lead path and derated power dissipation (1.2W–3.0W depending on PCB copper area). ESD robustness includes HBM = 4kV and MM = 400V, meeting industrial handling requirements without additional protection circuitry.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	-400V - Enables direct use in 380V AC rectified bus snubbing and hold-up circuits without series stacking.
I_C (cont.)	-500mA - Supports sustained current in auxiliary bias windings and low-power HV gate drivers.
V_CE(sat)	< -250mV @ -50mA - Minimizes conduction loss and self-heating in linear-regulator-style hold-up stages.
h_FE	> 40 @ -200mA - Ensures stable base drive margin under high-current load transients in power supply feedback paths.
f_T	50MHz - Permits clean turn-off in flyback reset clamping with sub-2µs t_off (2000ns typical).
R_θJA	41.7°C/W (50mm × 50mm 2oz Cu) - Defines minimum PCB copper area needed to maintain T_J < 125°C at 2W dissipation.

Pinout & Package

Package: SOT223 (Type DN), surface-mount, 3-terminal plastic molded case with exposed collector tab for thermal conduction. Weight: 0.112g. Moisture sensitivity level: J-STD-020 Level 1.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main current sink terminal, electrically connected to metal tab	Primary thermal path to PCB copper; must be soldered to ≥25mm² thermal pad for rated power handling.
Emitter	Current source node in PNP configuration	Connected to high-voltage rail; reverse-biased V_EBO = -7V limits base-emitter voltage swing in linear operation.
Base	Control input for minority-carrier injection	Requires current-limited drive (e.g., 5–10mA) to achieve specified V_CE(sat); not voltage-driven.

Key Features

Feature	Design Value
High-voltage blocking	V_CEO = -400V enables direct interface with 380V DC bus without external voltage division or cascoding.
Low-saturation switching	V_CE(sat) < -250mV at -50mA reduces power loss by >30% vs. standard PNP transistors in hold-up regulators.
High-current gain stability	h_FE ≥ 40 maintained up to -200mA ensures predictable base drive sizing across production lots and temperature.
Automotive-capable construction	Halogen- and antimony-free "Green" compound (Br+Cl < 1500ppm, Sb < 1000ppm) meets IATF 16949 manufacturing requirements.

Applications

Industrial Power Supply Hold-Up

Off-Line Flyback Snubber

Use Scenario: Maintains auxiliary V_CC during AC brownout in 24V/48V industrial SMPS.

IC Role / Device Role / Timing Role: PNP high-side switch controlling energy transfer from bulk capacitor to bias winding.

Use Value: -400V V_CEO withstands reflected flyback spikes; low V_CE(sat) extends hold-up time by reducing dropout voltage.

Use Scenario: Clamps voltage overshoot across primary MOSFET during flyback transformer reset.

IC Role / Device Role / Timing Role: Passive clamp transistor absorbing leakage inductance energy into RC network.

Use Value: 50MHz f_T and 2000ns t_off ensure fast turn-off before next switching cycle, preventing secondary oscillation.

High-Voltage Relay Driver

EMI-Filtered DC-DC Bias Generator

Use Scenario: Drives 24V/48V coil relays in PLC I/O modules interfacing with 300V DC field buses.

IC Role / Device Role / Timing Role: High-side PNP switch isolating logic-level MCU output from HV coil supply.

Use Value: -7V V_EBO allows safe base biasing from 5V MCU via resistor divider; -1A I_CM handles relay inrush.

Use Scenario: Generates isolated 12V bias for gate drivers in three-phase inverter stacks using filtered DC link.

IC Role / Device Role / Timing Role: Linear regulator pass element in low-noise, EMI-hardened auxiliary supply.

Use Value: R_θJL = 12.9°C/W enables direct mounting to heatsink tab; low V_CE(sat) minimizes ripple-induced dropout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage PNP transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ZTX758 (Diodes Inc.)	SOT89 package; identical V_CEO, h_FE, and V_CE(sat); R_θJA = 125°C/W (higher thermal resistance)	Limited to lower-power (<0.8W) applications due to inferior thermal performance	Select when board space constraints prohibit SOT223 footprint but power dissipation remains ≤0.7W.
MJD2955G (ON Semiconductor)	TO-220 package; V_CEO = -70V (significantly lower); h_FE = 20–70 (wider variation); higher V_CE(sat) (-1.2V @ -4A)	Not suitable for >100V bus applications; requires larger heatsink for same power	Only consider for legacy TO-220 designs where voltage stress is <60V and thermal mass is available.

Compared with ZTX758 and MJD2955G, the FZT758TA provides superior thermal management in SOT223 form factor and unique -400V capability - making it irreplaceable in 380V DC auxiliary regulation and flyback snubbing where both voltage rating and PCB-area-constrained cooling are critical.

Availability

FZT758TA is available at Aetrix Electronics and suitable for industrial power supply hold-up, off-line flyback snubbing, and high-voltage relay driver circuits requiring stable component supply and long-term manufacturability.

Supply support for FZT758TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and the Americas.

The FZT758TA belongs to Diodes' high-voltage bipolar transistor product line, engineered specifically for industrial and automotive auxiliary power systems demanding robust 400V blocking, stable gain at high current, and green packaging compliance.

FAQ

What is the maximum allowable junction temperature for FZT758TA?

The FZT758TA has an operating junction temperature range of -55°C to +150°C. For reliable long-term operation, maximum continuous junction temperature should be limited to 125°C when operating at full rated power, based on thermal derating curves in DS33166 Rev. 4-2. Exceeding 150°C risks permanent parametric shift and bond-wire failure.

Can FZT758TA replace FZT757 in existing designs?

No - the FZT757 is an NPN transistor with V_CEO = +400V, while the FZT758TA is PNP with V_CEO = -400V. Their polarity, biasing requirements, and circuit topology roles are incompatible. Substitution would require complete schematic revision including inversion of drive signals and power rail referencing.

Is FZT758TA qualified to AEC-Q101 for automotive use?

The FZT758TA is not AEC-Q101 qualified per its datasheet. Diodes states that automotive-qualified versions require specific change control, PPAP capability, and IATF 16949 manufacturing - these are offered under separate part numbering (e.g., FZT758QTA) and must be requested directly through Diodes' automotive sales channel.

What is the recommended PCB pad layout for optimal thermal performance?

For 3.0W power dissipation, Diodes specifies a minimum 50mm × 50mm 2oz copper area connected to the collector tab. The suggested SOT223 (DN) pad layout includes a central thermal pad (C1 = 6.40mm wide) with 2.30mm spacing (C), and outer pads sized per dimensions X1 = 3.30mm and Y2 = 8.00mm - all detailed in DS33166 page 6.

FZT758TA Specifications

Product attributes: Attribute value

Manufacturer:: Diodes Incorporated

Series:: -

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 500 mA

Voltage - Collector Emitter Breakdown (Max):: 400 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 40 @ 200mA, 10V

Power - Max:: 2 W

Frequency - Transition:: 50MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223-3

FZT758TA FAQ

1.How can I place an order for FZT758TA through Aetrix?

Please submit a Request for Quotation (RFQ) for FZT758TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for FZT758TA reliable?

The price and inventory of FZT758TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for FZT758TA is usually 5 days.

3.What payment methods are accepted for FZT758TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for FZT758TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for FZT758TA?

FZT758TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your FZT758TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for FZT758TA?

For technical support, including FZT758TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your FZT758TA requirements.

6.How does Aetrix verify that FZT758TA is sourced from the original manufacturer or authorized distributors?

All FZT758TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that FZT758TA meets industry standards.

7.What is the process for return or replacement of FZT758TA?

All FZT758TA units undergo pre-shipment inspection (PSI). If there is an issue with FZT758TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The FZT758TA part is unused and in its original packaging.

Return procedure for FZT758TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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