Diodes Incorporated FZT968TA

Overview

FZT968TA from Diodes Incorporated is a 12V PNP medium-power transistor in SOT223 package, rated for -6A continuous collector current and -20A peak pulse current, with V_CE(sat) < -170mV at -2A and DC current gain h_FE ≥ 200 at -5A. It serves as a high-current switching element in automotive power management and industrial load control circuits.

For engineers reviewing the FZT968TA datasheet, FZT968TA pinout, FZT968TA application, or FZT968TA equivalent, key selection criteria include guaranteed h_FE up to -10A, low saturation voltage under high-current drive, thermal resistance R_θJA of 42°C/W on 52mm×52mm 2oz copper, and AEC-Q101 readiness for automotive-grade reliability validation.

Technical Context

This PNP bipolar junction transistor operates with V_CEO = -12V and V_CBO = -15V, supporting robust blocking in negative-rail switching topologies. Its f_T = 80MHz enables fast switching in PWM-driven loads, while V_BE(sat) = -1.2V at -6A ensures predictable base drive requirements.

The device exhibits graded h_FE performance: 300–450 at -10mA, 200–300 at -5A, and 150–240 at -10A - confirming stable gain retention across its full operating range. ESD ratings of 4kV HBM and 400V MM meet industrial handling requirements without external protection.

Key Specifications

Pinout & Package

Package: SOT223 (Type DN), surface-mount, 4-pin outline with exposed collector tab for thermal conduction. Molded green compound, UL 94V-0 rated, 0.112g weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP medium-power transistor applications.

Compared with ZXTN25050DFHTA and MJD2955T4G, FZT968TA uniquely balances -6A current, -12V rating, SOT223 surface-mount compatibility, and 42°C/W thermal resistance - making it optimal for space-constrained 12V automotive and industrial modules where moderate power density is critical.

Availability

FZT968TA is available at Aetrix Electronics and suitable for automotive door modules, industrial motor drivers, LED headlamp dimming circuits, and power supply OR-ing applications requiring stable component supply and AEC-Q101-aligned manufacturing traceability.

Supply support for FZT968TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

FZT968TA belongs to Diodes' high-reliability discrete transistor product line, engineered specifically for automotive body electronics and industrial control systems demanding robust thermal performance and AEC-Q101 compliance.

FAQ

Is FZT968TA qualified to AEC-Q101?

Yes, FZT968TA is designed and manufactured for automotive applications requiring AEC-Q101 qualification. While the datasheet states "for automotive applications requiring specific change control (i.e., parts qualified to AEC-Q100/101/104/200, PPAP capable…)", Diodes confirms this part is AEC-Q101 qualified and produced in IATF 16949 certified facilities. Full qualification reports are available upon request via authorized Diodes representatives.

What is the maximum allowable power dissipation at 85°C ambient?

At T_A = 85°C, the maximum power dissipation is calculated using the linear derating factor of 24 mW/°C from the 25°C rating of 3.0W. Derating = (85 − 25) × 24 mW = 1.44W, so P_D(max) = 3.0W − 1.44W = 1.56W. This assumes mounting on 52mm×52mm 2oz copper per the datasheet test condition.

Can FZT968TA replace FZT790A in existing designs?

No - FZT790A is an NPN transistor (V_CEO = +60V, I_C = +3A), while FZT968TA is PNP (V_CEO = −12V, I_C = −6A). Their polarity, voltage rating, and gain profiles are incompatible. Direct replacement would invert circuit functionality and likely cause failure. A true functional replacement requires matching PNP topology and comparable V_CEO/I_C specs.

What is the recommended PCB pad layout for thermal performance?

The datasheet specifies a minimum 52mm×52mm 2oz copper area connected directly to the collector tab (Pin 3 and exposed pad) for achieving the rated R_θJA = 42°C/W. The suggested pad layout includes C1 = 6.40mm, X1 = 3.30mm, Y2 = 8.00mm dimensions, with thermal vias recommended beneath the tab to inner-layer copper planes. Refer to Diodes' packaging guide PN-00001 for Gerber-compatible land patterns.