Vishay General Semiconductor - Diodes Division GBU6K-M3/51

Overview

GBU6K-M3/51 from Vishay General Semiconductor is a glass passivated single-phase bridge rectifier with 800 V maximum repetitive peak reverse voltage (VRRM), 6.0 A average forward rectified output current (IF(AV)), and 175 A peak forward surge current (IFSM). It features 1.0 V forward voltage drop at 6.0 A, 5 μA reverse leakage current at 25 °C, and operates from –55 °C to +150 °C junction temperature. It is used in AC/DC full-wave rectification for switching mode power supplies and home appliances.

For engineers reviewing the GBU6K-M3/51 datasheet, GBU6K-M3/51 pinout, GBU6K-M3/51 application, or GBU6K-M3/51 equivalent, key selection factors include its 800 V VRRM rating, 6.0 A thermal derating profile on PCB copper pads, halogen-free RoHS-compliant M3 termination, and 1500 VRMS case dielectric strength - all critical for reliable high-surge industrial and consumer power conversion designs.

Technical Context

The GBU6K-M3/51 implements a standard in-line single-phase bridge configuration with four diodes arranged as two anti-parallel pairs across AC inputs and DC outputs. Its glass passivation ensures stable reverse blocking performance up to 800 V and low IR of 5 μA at 25 °C, with thermal resistance RθJA = 20 °C/W under PCB mounting conditions.

Designed for through-hole PCB assembly, it supports solder dip at 275 °C for 10 s and meets JESD 22-B102 solderability standards. The GBU package uses matte tin-plated leads, UL 94 V-0 molding compound, and is qualified per JESD 201 Class 1A whisker test.

Key Specifications

Pinout & Package

Package: GBU case - 4-terminal, in-line, through-hole plastic package with polarity marked on body (AC1, AC2, +, –); dimensions 0.720–0.740" L × 0.190–0.210" W × 0.130–0.140" H (18.3–18.8 × 4.83–5.33 × 3.30–3.56 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bridge rectifier applications.

Compared with GBU6K-M3/51, GBU6K-E3/51 offers identical performance with standard RoHS compliance, while KBU6K provides a functionally equivalent second source from a different manufacturer - both preserve board layout, thermal design, and system-level reliability without modification.

Availability

GBU6K-M3/51 is available at Aetrix Electronics and suitable for switching mode power supplies, printer power modules, and home appliance control boards requiring stable component supply, halogen-free compliance, and high-surge robustness.

Supply support for GBU6K-M3/51 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and optoelectronics with emphasis on reliability and power efficiency.

The GBU series was developed for high-current, high-voltage AC/DC bridge rectification in cost-sensitive, high-volume consumer and industrial power supplies - prioritizing surge resilience, thermal stability, and regulatory compliance.

FAQ

What is the maximum repetitive peak reverse voltage rating for GBU6K-M3/51?

The GBU6K-M3/51 has a maximum repetitive peak reverse voltage (VRRM) of 800 V. This rating defines the highest instantaneous reverse voltage the device can block repeatedly without breakdown under normal operating conditions. It is verified per the Vishay datasheet document number 88615 and applies across the full operating temperature range of –55 °C to +150 °C. This 800 V rating makes GBU6K-M3/51 suitable for universal-input (85–265 VAC) power supplies with sufficient transient margin.

Does GBU6K-M3/51 require a heatsink for 6.0 A continuous operation?

GBU6K-M3/51 supports 6.0 A average forward current only when case-mounted on an aluminum plate heatsink at TC = 90 °C. Under free-air or standard PCB mounting (0.5" × 0.5" copper pads), its derated IF(AV) drops to 3.8 A at TA = 40 °C. Therefore, sustained 6.0 A operation requires external heatsinking per Figure 1 in the datasheet. Thermal design must account for RθJC = 2.5 °C/W and system-level airflow or conduction paths to maintain TJ ≤ 150 °C.

What does the "M3" suffix indicate in GBU6K-M3/51?

The "M3" suffix in GBU6K-M3/51 denotes halogen-free, RoHS-compliant construction with matte tin-plated leads qualified to JESD 201 Class 1A whisker testing. Unlike the E3 variant, M3 meets strict environmental mandates including JEDEC JS709 and IEC 61249-2-21. The GBU6K-M3/51 maintains identical electrical and thermal specifications as GBU6K-E3/51, differing only in material composition and plating process - critical for EU, Japan, and other regulated markets.

Can GBU6K-M3/51 be used in place of GBU6J-M3/51?

No - GBU6K-M3/51 and GBU6J-M3/51 are not interchangeable without circuit review. While both share the same GBU package and 6.0 A IF(AV), GBU6J-M3/51 has VRRM = 600 V versus 800 V for GBU6K-M3/51. Substituting GBU6J-M3/51 in a design relying on 800 V blocking may result in reverse breakdown during line transients. Always verify VRRM, IFSM, and thermal derating curves before cross-referencing within the GBU6x family.

What is the typical junction capacitance of GBU6K-M3/51 per diode?

The typical junction capacitance (CJ) of GBU6K-M3/51 is 68 pF per diode at 4 V and 1 MHz, as specified in the Vishay datasheet. This value influences high-frequency switching behavior and EMI generation in rectifier stages. Because the GBU6K-M3/51 contains four diodes in bridge configuration, total input-to-output capacitance is not additive but depends on bias state; CJ remains relevant for snubber design and noise filtering in high-frequency SMPS applications using this device.