Diodes Incorporated GDZ3V9LP3-7

Overview

GDZ3V9LP3-7 from Diodes Incorporated is a 3.9 V, 5 mA Zener diode in an ultra-small X3-DFN0603-2 (0.6 × 0.3 mm) leadless package with 250 mW power dissipation, 500 °C/W thermal resistance, and 5 µA max reverse leakage at 1.0 V. It is AEC-Q101 qualified, halogen/antimony-free, and designed for precision voltage reference and overvoltage protection in space-constrained, battery-powered systems.

For engineers reviewing the GDZ3V9LP3-7 datasheet, GDZ3V9LP3-7 pinout, GDZ3V9LP3-7 application, or GDZ3V9LP3-7 equivalent, key selection criteria include its tight 3.74–4.16 V zener voltage tolerance at 5 mA, ultra-low 0.2 mg weight, 0.3 mm profile, cathode-bar marking, and suitability for automated SMT assembly on FR-4 PCBs.

Technical Context

This Zener diode operates in reverse breakdown to maintain stable voltage regulation under controlled current conditions. Its 3.9 V nominal zener voltage exhibits a temperature coefficient near zero (per Figure 7), making it suitable for low-drift reference applications across –55°C to +150°C ambient range.

Thermal performance is defined by 500 °C/W junction-to-ambient resistance on standard FR-4 layout, with power derating linear above +25°C (Figure 1). The device uses a matte tin–plated copper leadframe and green molding compound compliant with UL 94V-0 and J-STD-020 Level 1 moisture sensitivity.

Key Specifications

Pinout & Package

Package: X3-DFN0603-2 - ultra-small, leadless, two-terminal surface-mount package with cathode bar marking on top side and 0.3 mm profile.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with BZX384-B3V9 and MMSZ4685T1G, GDZ3V9LP3-7 delivers optimal balance of miniature size, AEC-Q101 qualification, and production-ready SMT compatibility-making it preferred for next-gen automotive and portable electronics where volume, reliability, and footprint are co-constrained.

Availability

GDZ3V9LP3-7 is available at Aetrix Electronics and suitable for automotive body control modules, wearable health monitors, industrial IoT sensor nodes, and USB-C power delivery negotiation circuits requiring stable component supply across extended temperature ranges and high-reliability manufacturing flows.

Supply support for GDZ3V9LP3-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving automotive, industrial, computing, and consumer markets with high-reliability components.

The GDZ LP3 series belongs to Diodes' ultra-miniature Zener diode product line, engineered specifically for space-constrained, high-volume SMT applications demanding AEC-Q101 compliance and green material specifications.

FAQ

What is the maximum reverse voltage rating before breakdown for GDZ3V9LP3-7?

The GDZ3V9LP3-7 has no rated "maximum reverse voltage" distinct from its zener voltage-it enters controlled breakdown at 3.74 V (min) and maintains regulation up to 4.16 V (max) at 5 mA test current. Operation above 4.16 V risks exceeding 250 mW power limit unless current is strictly limited externally.

Is GDZ3V9LP3-7 suitable for bidirectional ESD protection?

No-GDZ3V9LP3-7 is a unidirectional Zener diode optimized for reverse-bias voltage regulation only. Its forward voltage is ~0.9 V at 10 mA (Figure 2), and it lacks symmetric clamping characteristics required for IEC 61000-4-2 ESD protection. Use dedicated TVS diodes like D3V3M1U2S for bidirectional surge suppression.

How does the X3-DFN0603-2 package affect solder reflow profile requirements?

The X3-DFN0603-2 package requires peak reflow temperatures ≤260°C for ≤10 seconds (J-STD-020 Level 1), with ramp rates ≤3°C/s pre-peak. Its low thermal mass demands tighter time-above-liquidus (TAL) control (60–150 s) to avoid voiding or tombstoning-especially critical given the 0.355 mm pitch between terminals.

Does GDZ3V9LP3-7 exhibit significant capacitance that could affect high-frequency signal lines?

At 1 MHz, GDZ3V9LP3-7 exhibits ≤1.5 pF total capacitance (typical for 3.9 V Zeners in this family), confirmed by Figure 6. This low value makes it suitable for DC biasing and low-speed voltage clamping but not recommended for RF signal path protection where sub-0.5 pF is typically required.