Diodes Incorporated GDZ4V1LP3-7

Overview

GDZ4V1LP3-7 from Diodes Incorporated is a 4.1 V ±5% Zener diode in an ultra-small 0.6 × 0.3 mm DFN package (X3-DFN0603-2), rated for 250 mW power dissipation at +25°C, with 5 µA test current, ≤5.0 µA reverse leakage at 1.0 V, and AEC-Q101 qualified for automotive reliability. It serves as a precision voltage reference or overvoltage clamp in space-constrained portable electronics.

For engineers reviewing the GDZ4V1LP3-7 datasheet, GDZ4V1LP3-7 pinout, GDZ4V1LP3-7 application, or GDZ4V1LP3-7 equivalent, key selection criteria include its 4.1 V nominal Zener voltage, ultra-low profile (0.3 mm height), cathode-bar-marked DFN-2 terminal layout, low leakage for battery-powered systems, and AEC-Q101 qualification for automotive-grade stability.

Technical Context

This Zener diode operates in reverse breakdown to maintain stable voltage regulation across varying load and temperature conditions. Its 4.1 V nominal Zener voltage is specified at 5 mA test current, with tight tolerance (±5%) and low dynamic impedance ensuring minimal voltage drift under transient loads.

Designed for high-reliability surface-mount applications, it features a matte tin–plated copper leadframe, halogen/antimony-free green molding compound (UL 94V-0), and moisture sensitivity level 1 per J-STD-020-enabling robust performance in automated reflow assembly without preconditioning.

Key Specifications

Pinout & Package

Package: X3-DFN0603-2 - ultra-compact, leadless, two-terminal surface-mount package with cathode bar marking on top surface; molded green compound, UL 94V-0 rated, 0.2 mg weight.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with BZX384-B4V3 and MMSZ4V3T1G, GDZ4V1LP3-7 offers tighter voltage tolerance (±5% vs. ±5.8%), smaller footprint (0.18 mm² vs. ≥2.2 mm²), and AEC-Q101 qualification-making it optimal for space-limited automotive and portable electronics requiring certified reliability.

Availability

GDZ4V1LP3-7 is available at Aetrix Electronics and suitable for automotive body control modules, wearable health sensors, industrial IoT edge nodes, and smartphone camera modules requiring stable component supply across long production lifecycles.

Supply support for GDZ4V1LP3-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, serving automotive, industrial, computing, and consumer markets with high-reliability components.

GDZ4V1LP3-7 belongs to the GDZ-LP3 ultra-miniature Zener diode product line, engineered specifically for space-constrained, high-reliability applications demanding AEC-Q101 qualification and green compliance.

FAQ

What is the maximum reverse voltage (V_R) that GDZ4V1LP3-7 can withstand before breakdown?

The GDZ4V1LP3-7 exhibits a nominal Zener voltage of 4.1 V at 5 mA test current, with guaranteed breakdown occurring between 3.93 V and 4.37 V. It is not rated for sustained reverse operation below this range; the 1.0 V reverse voltage condition specifies leakage current (≤5.0 µA), not breakdown threshold.

Does GDZ4V1LP3-7 require special PCB layout considerations for thermal performance?

Yes. With R_θJA = 500 °C/W, thermal performance depends heavily on pad design. Diodes Incorporated recommends using their documented X3-DFN0603-2 suggested pad layout (0.23 mm × 0.61 mm solder mask opening, 0.38 mm thermal pad) on 1-oz FR-4 to achieve rated 250 mW dissipation at +25°C ambient.

Is GDZ4V1LP3-7 compatible with lead-free reflow profiles?

Yes. The device is fully RoHS 3 compliant and qualified for standard Pb-free reflow processes (JEDEC J-STD-020 Level 1). Its matte tin–plated terminals meet MIL-STD-202 Method 208 solderability requirements, supporting peak temperatures up to 260°C for ≤60 seconds.

How does the temperature coefficient affect regulation accuracy over −55°C to +150°C?

Per Figure 7, GDZ4V1LP3-7 has a typical temperature coefficient of ~+0.03%/°C near 4.1 V. Over the full operating range, this results in approximately ±45 mV total drift (±1.1% of 4.1 V), making it suitable for non-critical biasing but not metrology-grade references.