Diodes Incorporated GDZ5V1LP3-7

Overview

GDZ5V1LP3-7 from Diodes Incorporated is a 5.1 V, ±5% tolerance Zener diode in an ultra-small X3-DFN0603-2 (0.6 × 0.3 mm) leadless package, rated for 250 mW power dissipation at +25°C, with reverse leakage ≤0.2 µA at 2.0 V and thermal resistance of 500°C/W - used for precision voltage reference and overvoltage protection in space-constrained portable electronics.

For engineers reviewing the GDZ5V1LP3-7 datasheet, GDZ5V1LP3-7 pinout, GDZ5V1LP3-7 application, or GDZ5V1LP3-7 equivalent, key selection criteria include its low-profile DFN package, AEC-Q101 qualification, halogen/antimony-free "Green" construction, and tight 5.1 V Zener voltage tolerance under 5 mA test current.

Technical Context

This Zener diode operates in reverse breakdown mode to maintain stable voltage regulation across load and supply variations. Its 5.1 V nominal Zener voltage is specified at I_ZT = 5 mA, with temperature coefficient optimized near zero crossing (≈0 %/°C per Figure 7), supporting stable reference performance over −55°C to +150°C.

The device uses a planar silicon junction structure with cathode-bar marking on the top surface, mounted in a molded plastic case (UL 94V-0) and matte tin–plated copper leadframe. Moisture sensitivity level is rated Class 1 per J-STD-020, enabling standard reflow assembly without baking.

Key Specifications

Pinout & Package

Package: X3-DFN0603-2 - ultra-compact, leadless, two-terminal surface-mount package with exposed copper thermal pad (not electrically connected), matte tin–plated terminals, and cathode bar marking on top surface.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener diode applications.

Compared with BZX584C5V1 and MMSZ5231B, GDZ5V1LP3-7 uniquely combines AEC-Q101 qualification, 0.6 × 0.3 mm footprint, and sub-µA leakage - making it optimal for space- and reliability-critical automotive and portable medical applications.

Availability

GDZ5V1LP3-7 is available at Aetrix Electronics and suitable for portable power management, automotive body control modules, industrial sensor nodes, and medical wearable monitors requiring stable component supply across extended temperature ranges and high-reliability manufacturing.

Supply support for GDZ5V1LP3-7 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Diodes Incorporated is a global manufacturer of discrete semiconductors and analog ICs, headquartered in Plano, Texas, with design, manufacturing, and sales operations across Asia, Europe, and North America.

GDZ5V1LP3-7 belongs to the GDZ-LP3 series of ultra-miniature Zener diodes engineered specifically for high-density, low-power, and automotive-qualified voltage regulation and protection in modern portable and embedded systems.

FAQ

What is the maximum reverse voltage that can be continuously applied to GDZ5V1LP3-7 without breakdown?

The absolute maximum reverse voltage is defined by the Zener breakdown specification: GDZ5V1LP3-7 begins regulating at 4.84 V (min) and reaches full conduction by 5.37 V (max) at 5 mA. Applying >5.37 V continuously will cause uncontrolled current flow unless externally limited by series resistance - exceeding 250 mW power dissipation risks thermal failure.

Is GDZ5V1LP3-7 suitable for use in high-frequency signal path clamping?

No - GDZ5V1LP3-7 exhibits ~1.2 pF total capacitance at 1 MHz (per Figure 6), making it unsuitable for RF or high-speed digital signal clamping. It is intended for DC/low-frequency voltage reference and overvoltage protection, not signal integrity applications requiring sub-0.5 pF capacitance.

Does GDZ5V1LP3-7 require special PCB layout considerations for thermal performance?

Yes - the X3-DFN0603-2 package relies on copper pad area for heat dissipation. Diodes Incorporated specifies a minimum pad layout (X1=0.61 mm, Y=0.30 mm, C=0.38 mm) to achieve the rated 250 mW at +25°C. Reducing pad size increases R_θJA, accelerating thermal derating per Figure 1.

Can GDZ5V1LP3-7 replace a 5.1 V Zener in an existing design using DO-35 or SOD-123 packages?

Only with layout revision - GDZ5V1LP3-7 uses a 0.6 × 0.3 mm DFN footprint incompatible with DO-35 (axial) or SOD-123 (3.7 × 1.6 mm). Electrical behavior is comparable, but mechanical fit, soldering profile, and thermal path differ significantly; redesign of land pattern and stencil is mandatory.