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NXP Semiconductors GTL2002GM,125
- Part No.:
- GTL2002GM,125
- Manufacturer:
- NXP Semiconductors
- Category:
- Translators, Level Shifters
- Package:
- Datasheet:
-
GTL2002GM,125.pdf
- Description:
- IC TRANSLTR BIDIRECTIONAL 8XQFNU
- Quantity:
- Payment:
- Shipping:
Inventory:4,237
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Product details
Overview
GTL2002GM,125 from NXP Semiconductors is a 2-bit bidirectional low-voltage translator IC using NMOS pass transistors for seamless voltage level translation between 1.0 V and 5.0 V buses without direction control. It features 6.5 Ω typical ON-state resistance, <5.5 ns propagation delay, and supports I²C-bus, GTL/GTL+, LVTTL/TTL, and 5 V CMOS interfacing in space-constrained applications.
For engineers reviewing the GTL2002GM,125 datasheet, GTL2002GM,125 pinout, GTL2002GM,125 application, or GTL2002GM,125 equivalent, key selection criteria include its XQFN8 package (1.6 × 1.6 × 0.5 mm), 5 V-tolerant inputs, no power supply requirement, hot-insertion support, and ESD robustness (2000 V HBM / 1000 V CDM).
Technical Context
The GTL2002GM,125 implements Gunning Transceiver Logic – Transceiver Voltage Clamp (GTL-TVC) architecture with two matched NMOS pass transistors (S1/D1 and S2/D2) and a reference transistor (SREF/DREF/GREF). Its operation relies on gate-controlled clamping: when GREF is biased ≥1.5 V above SREF, the device enables bidirectional translation by limiting Sn-side voltage to SREF while allowing Dn-side pull-up to VCC.
All internal transistors are fabricated identically, ensuring minimal inter-channel deviation in ON-resistance and propagation delay. The reference configuration allows flexible board layout-SREF and DREF may be implemented using any of the matched Sn/Dn pairs-while maintaining precise voltage translation accuracy across 1.0 V to 5.0 V domains.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Function | 2-bit bidirectional voltage translator with no direction pin; enables seamless interface between mismatched voltage domains (e.g., 1.2 V CPU ↔ 3.3 V peripheral) |
| ON-state Resistance (Ron) | 6.5 Ω typical at VGREF = 4.5 V; ensures low insertion loss and minimal voltage drop during signal pass-through |
| Propagation Delay | 1.5 ns typical (tPLH/tPHL); supports >200 MHz data rates in high-speed bus translation |
| Voltage Translation Range | 1.0 V ↔ 5.0 V bidirectional; compatible with GTL, GTL+, LVTTL/TTL, and 5 V CMOS logic families |
| ESD Protection | 2000 V HBM (JESD22-A114), 1000 V CDM (JESD22-C101); protects downstream low-voltage devices from system-level ESD events |
| Operating Temperature | −40 °C to +85 °C ambient; qualified for industrial-grade embedded and computing applications |
| Supply Requirement | No external power supply needed; operates passively via external pull-up resistors and reference voltage biasing |
Pinout & Package
XQFN8 package: plastic extremely thin quad flat package, no leads, 8 terminals, body size 1.6 × 1.6 × 0.5 mm, moisture sensitivity level (MSL) 1, reflow solderable.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 - SREF | Source of reference transistor | Connected to processor core supply (e.g., 1.2 V/1.5 V/1.8 V); sets maximum output voltage on Sn side |
| 2 - S1 | Low-voltage port 1 source | Connects to low-voltage domain (e.g., CPU I/O); bidirectionally translated with D1 |
| 3 - S2 | Low-voltage port 2 source | Second low-voltage I/O channel; electrically matched to S1 for consistent timing and voltage behavior |
| 4 - GND | Ground reference | Common 0 V return for all internal transistors; must be low-impedance connection to system ground plane |
| 5 - D1 | High-voltage port 1 drain | Connects to higher-voltage domain (e.g., 3.3 V/5 V peripheral bus); bidirectionally translated with S1 |
| 6 - D2 | High-voltage port 2 drain | Second high-voltage I/O channel; shares identical electrical characteristics with D1 |
| 7 - DREF | Drain of reference transistor | Biased to higher-voltage VCC (3.3–5.5 V) via 200 kΩ pull-up; enables clamp activation when GREF is asserted |
| 8 - GREF | Gate of reference transistor | Control input tied to DREF; must be ≥1.5 V above SREF for reliable translator operation |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through pinout | Optimized terminal arrangement (SREF–S1–S2–GND–D1–D2–DREF–GREF) minimizes PCB trace crossovers and simplifies routing in dense layouts |
| Hot-insertion support | Zero-power operation and robust ESD protection allow safe live insertion into powered backplanes or hot-swap systems |
| No latch-up risk | Passive NMOS structure with no parasitic SCR path eliminates latch-up under overvoltage or ESD stress conditions |
| 5 V tolerant inputs | D1, D2, DREF, and GREF accept up to 5.5 V regardless of SREF voltage-enables direct interfacing with legacy 5 V peripherals |
| Matched transistor matching | Identical fabrication of all NMOS devices ensures ≤5% Ron variation and <0.3 ns inter-channel skew for timing-critical buses |
Applications
| I²C-Bus Level Translation | GTL/GTL+ to LVTTL Interface |
|---|---|
Use Scenario: Translating 1.8 V I²C signals from an application processor to 3.3 V sensor or EEPROM peripherals on the same bus. IC Role / Device Role / Timing Role: Bidirectional passive clamp translating SDA/SCL lines without direction control or added latency. Use Value: Eliminates need for active translators with direction logic; maintains I²C timing integrity with <5.5 ns delay and preserves open-drain topology. |
Use Scenario: Interfacing GTL+ (1.2 V swing) memory controller outputs to 2.5 V or 3.3 V LVTTL-compatible DDR address/control buffers. IC Role / Device Role / Timing Role: Voltage clamp enabling signal compatibility between GTL-family logic and standard TTL voltage thresholds. Use Value: Prevents overvoltage damage to low-VOH GTL drivers while ensuring sufficient noise margin at LVTTL inputs. |
| Processor Core-to-Peripheral Bridge | Legacy System Voltage Migration |
Use Scenario: Connecting a 1.0 V mobile SoC GPIO bank to 5 V industrial I/O expanders or level-shifting PMICs. IC Role / Device Role / Timing Role: Unidirectional or bidirectional translator isolating core logic from higher-voltage subsystems. Use Value: Enables voltage scaling of advanced nodes without redesigning entire peripheral interface layer; supports hot-plug capability. |
Use Scenario: Upgrading aging 5 V microcontroller-based equipment with modern 1.5 V FPGA co-processors while retaining existing 5 V sensors and actuators. IC Role / Device Role / Timing Role: Passive bridge maintaining signal integrity across mixed-voltage signal paths during phased migration. Use Value: Avoids costly PCB respins; leverages existing 5 V infrastructure while introducing lower-power logic domains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar bidirectional voltage translation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TXB0102RUGR | Active translation with integrated charge pump; requires 1.2–3.6 V supply; higher quiescent current (10 µA vs. GTL2002GM,125's near-zero standby) | Supports wider voltage range (1.2 V ↔ 5.5 V) but adds complexity for simple clamp-based designs | Choose TXB0102RUGR only if dynamic voltage tracking or automatic direction sensing is required; GTL2002GM,125 preferred for static, low-power, zero-supply use cases |
| SN74AVC2T244RSWR | Direction-controlled dual-bit translator; requires external direction signal; higher Ron (~12 Ω) and slower propagation (~7 ns) | Designed for unidirectional or controlled bidirectional flow; not suitable for true directionless I²C-style buses | Select SN74AVC2T244RSWR when explicit direction control is available and higher drive strength is needed; GTL2002GM,125 remains optimal for directionless, low-latency, low-Ron translation |
Compared with TXB0102RUGR and SN74AVC2T244RSWR, GTL2002GM,125 delivers superior performance in zero-power, directionless, low-Ron applications-particularly where ESD robustness, thermal simplicity, and PCB routing efficiency are critical.
Availability
GTL2002GM,125 is available at Aetrix Electronics and suitable for industrial automation interfaces, embedded processor I/O expansion, and high-density compute module design requiring stable component supply and long-term lifecycle assurance.
Supply support for GTL2002GM,125 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in secure connectivity solutions for automotive, industrial, and IoT applications, with deep expertise in interface, power management, and RF technologies.
The GTL2002GM,125 belongs to NXP's GTL-TVC family of passive voltage translators, engineered specifically for high-speed, low-power, directionless level shifting in next-generation processors, memory subsystems, and mixed-voltage peripheral interconnects.
FAQ
Does GTL2002GM,125 require an external power supply?
No, GTL2002GM,125 operates passively without any VCC connection. It relies solely on external pull-up resistors on the Dn side and proper biasing of SREF and GREF/DREF to enable bidirectional translation. This eliminates power supply design overhead and reduces system standby current.
What is the maximum recommended clamp current per channel for GTL2002GM,125?
The absolute maximum clamp current per channel for GTL2002GM,125 is ±128 mA, but the recommended operating limit is 64 mA to maintain VOL ≤350 mV and ensure reliable transistor operation. Exceeding 64 mA increases pass voltage and thermal stress without functional benefit.
Can GTL2002GM,125 translate between 1.0 V and 5.0 V in both directions simultaneously?
Yes-GTL2002GM,125 supports true simultaneous bidirectional translation between 1.0 V and 5.0 V domains. When SREF is set to 1.0 V and DREF/GREF are pulled to 5.0 V, S1/S2 outputs are clamped to ~1.0 V while D1/D2 are pulled to 5.0 V, enabling concurrent low→high and high→low signal flow on the same pins.
Is GTL2002GM,125 compatible with I²C-bus open-drain topology?
Yes, GTL2002GM,125 is explicitly designed for I²C-bus applications. Its passive clamp architecture preserves open-drain behavior: when either side drives LOW, the channel conducts; when HIGH, the low-voltage side is clamped and the high-voltage side is pulled up externally-fully compliant with I²C electrical specifications.
What is the thermal profile recommendation for reflow soldering GTL2002GM,125?
GTL2002GM,125 uses the XQFN8 package (SOT902-2), classified under J-STD-020D as ≤1.6 mm thickness and <350 mm³ volume. For lead-free reflow, peak temperature must reach 260 °C with ≤60 s above 217 °C; for SnPb, peak is 235 °C with ≤60 s above 183 °C. MSL is Level 1-no bake required before assembly.
GTL2002GM,125 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Translator Type:
- Voltage Level
- Channel Type:
- Bidirectional
- Number of Circuits:
- 1
- Channels per Circuit:
- 2
- Voltage - VCCA:
- 1 V ~ 5.5 V
- Voltage - VCCB:
- 1 V ~ 5.5 V
- Input Signal:
- -
- Output Signal:
- -
- Output Type:
- Open Drain
- Data Rate:
- -
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Features:
- Auto-Direction Sensing
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-XFQFN Exposed Pad
GTL2002GM,125 FAQ
1.How can I place an order for GTL2002GM,125 through Aetrix?
Please submit a Request for Quotation (RFQ) for GTL2002GM,125 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for GTL2002GM,125 reliable?
The price and inventory of GTL2002GM,125 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for GTL2002GM,125 is usually 5 days.
3.What payment methods are accepted for GTL2002GM,125?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for GTL2002GM,125 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for GTL2002GM,125?
GTL2002GM,125 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your GTL2002GM,125 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for GTL2002GM,125?
For technical support, including GTL2002GM,125 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your GTL2002GM,125 requirements.
6.How does Aetrix verify that GTL2002GM,125 is sourced from the original manufacturer or authorized distributors?
All GTL2002GM,125 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that GTL2002GM,125 meets industry standards.
7.What is the process for return or replacement of GTL2002GM,125?
All GTL2002GM,125 units undergo pre-shipment inspection (PSI). If there is an issue with GTL2002GM,125, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The GTL2002GM,125 part is unused and in its original packaging.
Return procedure for GTL2002GM,125:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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