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Renesas H5N2521FN-E-AR
- Part No.:
- H5N2521FN-E-AR
- Manufacturer:
- Renesas
- Category:
- Single Bipolar Transistors
- Package:
- -
- Datasheet:
-
H5N2521FN-E-AR.pdf
- Description:
- POWER FIELD-EFFECT TRANSISTOR
- Quantity:
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Inventory:2,174
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Product details
Overview
H5N2521FN-E-AR from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters, motor drivers, and industrial power supplies. It features 250 V VDSS, 3 A continuous drain current, 1.5 Ω typical RDS(on) at VGS = 10 V, 9 ns turn-on delay, and TO-220FN package with isolated heatsink tab.
For engineers reviewing the H5N2521FN-E-AR datasheet, H5N2521FN-E-AR pinout, H5N2521FN-E-AR application, or H5N2521FN-E-AR equivalent, this device serves as a discrete high-voltage, medium-current switching element where low conduction loss, fast switching, and thermal reliability in constrained PCB layouts are critical selection criteria.
Technical Context
This MOSFET employs a planar vertical DMOS structure optimized for ruggedness and stable gate threshold behavior across temperature. Its 6.25 °C/W channel-to-case thermal impedance enables 20 W dissipation at Tc = 25 °C, and its body diode supports freewheeling in inductive loads with 82 ns reverse recovery time and 0.89 V forward voltage at 3 A.
The device operates with ±30 V gate-source voltage tolerance and exhibits 3.0–4.5 V gate threshold (VGS(off)), ensuring reliable enhancement-mode turn-off. Total gate charge is 5.3 nC, supporting efficient drive with standard 5–10 V logic-level gate drivers without requiring level-shifting circuitry.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 250 V - Withstands up to 250 V drain-source blocking voltage, suitable for 200 V-class bus applications. |
| RDS(on) (typ) | 1.5 Ω @ VGS = 10 V, ID = 1.5 A - Enables <1.5 W conduction loss at 1.5 A, reducing thermal load in compact designs. |
| td(on) | 9 ns - Short turn-on delay minimizes overlap loss during hard-switching transitions in SMPS topologies. |
| Qg | 5.3 nC - Low total gate charge allows fast switching with modest driver output capability (e.g., TC4420 or similar). |
| θch-c | 6.25 °C/W - Direct thermal path to case supports heatsink mounting without thermal interface material degradation concerns. |
| trr | 82 ns - Body diode recovery performance enables use in synchronous rectification or flyback snubberless designs. |
| ID (cont) | 3 A @ Tc = 25 °C - Continuous current rating defined at case temperature, not ambient, enabling accurate thermal design. |
Pinout & Package
Package: TO-220FN (RENESAS code PRSS0003AB-A), thermally enhanced variant with insulated metal tab for direct heatsink mounting and electrical isolation of drain.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Gate) | Control input terminal | Receives gate drive signal; requires ≤±30 V swing; 0.95 nC Qgs ensures rapid Miller plateau traversal. |
| 2 (Drain) | High-side power switch node | Connected to high-voltage rail; electrically isolated from heatsink via molded plastic tab; handles 250 V blocking. |
| 3 (Source) | Power return reference | Serves as local ground reference for gate drive; source inductance must be minimized to preserve switching speed. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 1.5 Ω typ at 10 V drive reduces I²R losses in 3 A switching paths, improving efficiency in 12–48 V systems. |
| Fast switching | 9 ns td(on), 7 ns tr, 16 ns td(off), 7 ns tf enable >500 kHz operation with minimal transition loss in hard-switched converters. |
| Robust avalanche rating | 6 A IAP, 2.2 mJ EAR - Withstands single-pulse inductive energy without failure, enhancing system reliability in motor drives. |
| Low leakage | ≤1.0 µA IDSS at 250 V - Ensures minimal standby power loss in always-on industrial control modules. |
| Thermally optimized package | TO-220FN with isolated tab - Allows mechanical attachment to heatsink without additional insulation, simplifying thermal management. |
Applications
| Industrial Motor Drives | DC-DC Converters |
|---|---|
|
Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for factory automation actuators. IC Role / Device Role / Timing Role: High-side or low-side power switch controlling phase current with PWM frequencies up to 30 kHz. Use Value: 1.5 Ω RDS(on) and 82 ns trr reduce conduction and recovery losses, extending MOSFET lifetime under repetitive inductive stress. |
Use Scenario: Primary-side switch in isolated flyback or forward converters powering PLC I/O modules. IC Role / Device Role / Timing Role: Main power switch operating at 100–300 kHz with 250 V input derating margin. Use Value: 250 V VDSS and 6.25 °C/W θch-c support reliable operation at 85 °C ambient with minimal heatsinking. |
| LED Driver Circuits | Power Supply Protection |
|
Use Scenario: Constant-current switching element in high-brightness LED string drivers for signage and industrial lighting. IC Role / Device Role / Timing Role: PWM-controlled current regulator with 3 A peak capability for multi-string configurations. Use Value: Tight VGS(off) range (3.0–4.5 V) ensures consistent turn-off across temperature, preventing LED overcurrent drift. |
Use Scenario: Electronic fuse or hot-swap controller in 24 V industrial backplanes with overcurrent shutdown. IC Role / Device Role / Timing Role: Current-limiting switch activated by external sense amplifier and comparator. Use Value: Low 1.5 Ω RDS(on) minimizes voltage drop during normal operation while supporting fast fault response via gate control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP2NK25Z | 250 V VDSS, 2 A ID, 2.4 Ω RDS(on), TO-220 package (non-isolated tab) | Lower current rating and higher on-resistance; no isolated heatsink tab | Acceptable where 2 A max current suffices and heatsink isolation is not required. |
| IXTP20N25P | 250 V VDSS, 20 A ID, 0.22 Ω RDS(on), TO-220 package (non-isolated tab) | Higher current and lower RDS(on), but larger gate charge (32 nC) and no avalanche rating | Preferred for high-current, low-loss needs where avalanche robustness is secondary and gate drive strength is available. |
Compared with STP2NK25Z and IXTP20N25P, the H5N2521FN-E-AR offers balanced 3 A current handling, certified avalanche capability, and TO-220FN's isolated tab-making it uniquely suited for space-constrained, thermally demanding industrial switching where reliability under transient overload is mandatory.
Availability
H5N2521FN-E-AR is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, LED driver circuits, and power supply protection requiring stable component supply and long-term manufacturability.
Supply support for H5N2521FN-E-AR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader specializing in microcontrollers, analog, power, and SoC solutions for industrial, automotive, and infrastructure markets.
The H5N2521FN-E-AR belongs to Renesas' legacy high-voltage discrete MOSFET family, engineered for rugged, high-efficiency power switching in industrial equipment where thermal stability and avalanche immunity are design-critical.
FAQ
What is the maximum continuous drain current rating for the H5N2521FN-E-AR?
The H5N2521FN-E-AR has a continuous drain current (ID) rating of 3 A at case temperature Tc = 25 °C. This rating decreases with rising case temperature per the derating curve on page 3 of the datasheet, reaching zero at Tc = 150 °C. The device also supports 6 A pulsed drain current (ID(pulse)) for PW ≤ 10 µs and duty cycle ≤ 1%.
Does the H5N2521FN-E-AR have an avalanche-rated structure?
Yes, the H5N2521FN-E-AR is specified for unclamped inductive switching with an avalanche current (IAP) of 6 A and avalanche energy (EAR) of 2.2 mJ at Tch = 25 °C and Tch ≤ 150 °C. This rating confirms its ability to absorb single-pulse inductive energy without failure, a key requirement in motor drive and relay-driving applications.
What is the gate threshold voltage range for the H5N2521FN-E-AR?
The H5N2521FN-E-AR has a gate-to-source cutoff voltage (VGS(off)) range of 3.0 V to 4.5 V, measured at VDS = 10 V and ID = 1 mA. This threshold ensures clear enhancement-mode operation and stable turn-off behavior across temperature, with typical values shifting only modestly (e.g., ~3.5 V at 125 °C case temperature).
Can the H5N2521FN-E-AR be used with 5 V logic-level gate drivers?
No-the H5N2521FN-E-AR is not a logic-level MOSFET. Its RDS(on) is specified at VGS = 10 V (1.5 Ω typ), and its VGS(off) minimum is 3.0 V. At 5 V gate drive, RDS(on) increases significantly (>5 Ω), leading to excessive conduction loss. A 10 V or higher gate drive is required for optimal performance of the H5N2521FN-E-AR.
What is the thermal resistance from channel to case for the H5N2521FN-E-AR?
The channel-to-case thermal resistance (θch-c) of the H5N2521FN-E-AR is 6.25 °C/W, measured under specified test conditions (Tc = 25 °C). This value applies to the TO-220FN package with proper heatsink mounting and reflects the direct thermal path from silicon die to the isolated metal tab, enabling accurate junction temperature estimation.
H5N2521FN-E-AR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- -
- Current - Collector (Ic) (Max):
- -
- Voltage - Collector Emitter Breakdown (Max):
- -
- Vce Saturation (Max) @ Ib, Ic:
- -
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- -
- Power - Max:
- -
- Frequency - Transition:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
H5N2521FN-E-AR FAQ
1.How can I place an order for H5N2521FN-E-AR through Aetrix?
Please submit a Request for Quotation (RFQ) for H5N2521FN-E-AR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for H5N2521FN-E-AR reliable?
The price and inventory of H5N2521FN-E-AR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for H5N2521FN-E-AR is usually 5 days.
3.What payment methods are accepted for H5N2521FN-E-AR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for H5N2521FN-E-AR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for H5N2521FN-E-AR?
H5N2521FN-E-AR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your H5N2521FN-E-AR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for H5N2521FN-E-AR?
For technical support, including H5N2521FN-E-AR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your H5N2521FN-E-AR requirements.
6.How does Aetrix verify that H5N2521FN-E-AR is sourced from the original manufacturer or authorized distributors?
All H5N2521FN-E-AR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that H5N2521FN-E-AR meets industry standards.
7.What is the process for return or replacement of H5N2521FN-E-AR?
All H5N2521FN-E-AR units undergo pre-shipment inspection (PSI). If there is an issue with H5N2521FN-E-AR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The H5N2521FN-E-AR part is unused and in its original packaging.
Return procedure for H5N2521FN-E-AR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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